| Budget Amount *help |
¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000)
Fiscal Year 2017: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2016: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000)
Fiscal Year 2015: ¥12,090,000 (Direct Cost: ¥9,300,000、Indirect Cost: ¥2,790,000)
|
|---|
| Outline of Final Research Achievements |
Photo-induced glide of 30degrees-Si partial dislocations in 4H-SiC was induced by the illumination of laser light with a sub-gap energy (2.71 eV and 3.06 eV) in a transmission electron microscope (TEM), and the glide was observed in-situ by TEM under photo-illumination. It was concluded that the glide was enhanced by the photo-ionization of the dislocations with a localized energy level below 0.55 eV in depth. Under the hypothesis that 1) the glide velocity was determined by the drift motion of kinks on the dislocations and 2) the driving force of the glide was related to the energy of the stacking faults bound by the dislocations as well as to the line tension of the dislocations, the activation energy for the kink motion was estimated to be below 0.6 eV.
|
