Aomic scale structure control of InN and InGaN by immiscible nature in order to form a base for device applications
| Project/Area Number |
15H03559
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Crystal engineering
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| Research Institution | Ritsumeikan University |
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Principal Investigator |
Nanishi Yasushi 立命館大学, 理工学部, 授業担当講師 (40268157)
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| Co-Investigator(Kenkyū-buntansha) |
荒木 努 立命館大学, 理工学部, 教授 (20312126)
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| Research Collaborator |
AKASAKA Tetsuya
YAMAGUCHI Tomohiro
UEDONO Akira
SUDA Jun
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| Project Period (FY) |
2015-04-01 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2018)
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| Budget Amount *help |
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2018: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2017: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2016: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2015: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
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| Keywords | InN / InGaN / InAlN / 窒化物半導体 / 混晶組成 / MBE / 転位 / グラフィン / 極微領域評価 / 非混和性 / 非混和 / ナノ構造 / RF-MBE / 極微構造 / リーク電流 |
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| Outline of Final Research Achievements |
InGaN alloys are currently used for blue LEDs. Material properties are degraded dramatically, however, when we increase In composition to fabricate green, red and infra-red LEDs. Growth of composition-controlled higher quality InGaN with nano-structure was investigated by using newly developed DERI process, taking advantage of immiscible nature of this material system. It was found that effect of dislocation can be suppressed by growing Ga-rich wider band-gap material surrounding dislocations. On the other hand, stress from the substrate due to lattice mismatch affects alloy composition at the interface. Insertion of graphene substantially improved the quality of InN due to stress decrease
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| Academic Significance and Societal Importance of the Research Achievements |
本研究の成果は社会的には、InGaN混晶の波長利用可能領域を、青・緑色領域から、さらに、赤、赤外領域まで拡張する上で、その指針を得たことにある。一方学術的意義は、非混和性の強いInGaN, InAlN混晶の組成は、結合力差による一方の原子の優先的な固相への取り込みに加え、基板結晶との格子定数差の違いによる組成引き込み効果も重要な役割を演じていることを明らかにしたことにある。ファンデルワールス力結合によるグラフィンを基板との界面に挟むより、組成決定に対する基板からの制約を軽減できることを示したことも大きな意義と考えている。
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Report
(5 results)
Research Products
(116 results)
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[Journal Article] Surface and Bulk Electronic Structures of Unintentionally and Mg Doped In0.7Ga0.3N Epilayer by Hard X-ray Photoelectron Spectroscopy2018
Author(s)
M. Imura, S. Tsuda, H. Takeda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
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Journal Title
J. Appl. Phys.
Volume: 123
Issue: 9
Pages: 095701-1
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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[Journal Article] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy2017
Author(s)
M. Imura, S. Tsuda, T. Nagata, R. G. Banal, H. Yoshikawa, A. Yang, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
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Journal Title
J. Appl. Phys.
Volume: 121
Issue: 9
Pages: 095703-095703
DOI
Related Report
Peer Reviewed / Open Access / Int'l Joint Research
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[Presentation] Systematic Investigation of Surface and Bulk Electronic Structures of Unintentionally-Doped InxGa1-xN (0≦x≦1) Epilayers by Hard X-ray Photoelectron Spectroscopy2018
Author(s)
M. Imura, S. Tsuda, T. Nagata, R. G. Ryan, H. Yoshikawa, A. L. Anli, Y. Yamashita, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, T. Araki, and Y. Nanishi
Organizer
International Workshop on Nitride Semiconductors (IWN 2018)
Related Report
Int'l Joint Research
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[Presentation] Mg ドーピングによる高 In 組成 InGaN の表面-バルク電子状態変化2018
Author(s)
井村将隆, 津田俊輔, 長田貴弘, 山下良之, 吉川英樹, 小林啓介, 小出康夫, 山口智広, 金子昌充, 上松尚, 荒木努, 名西やすし
Organizer
2018年春季第65回応用物理学会学術講演会
Related Report
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[Presentation] Evaluation of Nitride Semiconductors Using Terahertz Time-Domain Spectroscopic Ellipsometry2017
Author(s)
T. Araki, K. Tachi, K. Morino, S. Asagami, T. Fujii, Y. Nanishi, T. Nagashima, T. Iwamoto, Y. Sato, N. Morita, R. Sugie, S. Kamiyama
Organizer
The 5th International Conference on Light-Emitting Devices and Their Industrial Applications (LEDIA '17)
Place of Presentation
パシフィコ横浜（神奈川県・横浜市)
Year and Date
2017-04-20
Related Report
Int'l Joint Research / Invited
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[Presentation] Surface and Bulk Electronic Structures of Mg-doped In0.7Ga0.3N Epilayer by Hard X-ray Photoelectron Spectroscopy2017
Author(s)
M. Imura, S. Tsuda, T. Nagata, A. L. Yang, Y. Yamashita, H. Yoshikawa, K. Kobayashi, Y. Koide, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
Organizer
12th International Conference on Nitride Semiconductors
Related Report
Int'l Joint Research
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[Presentation] Characterization of Electrical Properties of n-type GaN Layer Using Terahertz Time-Domain Spectroscopic Ellipsometry2016
Author(s)
K. Tachi, S. Asagami, T. Fujii, T. Nagashima, T. Iwamoto, Y. Sato, N. Morita, R. Sugie, S. Kamiyama, T. Araki and Y. Nanishi
Organizer
International Workshop on Nitride Semiconductor 2016 (IWN2016)
Place of Presentation
Orlando, Florida (USA)
Year and Date
2016-10-05
Related Report
Int'l Joint Research
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[Presentation] Surface and Bulk Electronic Structures of Heavily Mg-doped InN Epilayer by Hard X-ray Photoelectron Spectroscopy2016
Author(s)
M. Imura, S. Tsuda, T. Nagata, A. Yang, Y. Yamashita, H. Yoshikawa, Y. Koide, K. Kobayashi, T. Yamaguchi, M. Kaneko, N. Uematsu, K. Wang, T. Araki, and Y. Nanishi
Organizer
International Workshop on Nitride Semiconductor 2016 (IWN2016)
Place of Presentation
Orlando, Florida (USA)
Year and Date
2016-10-04
Related Report
Int'l Joint Research
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