Operando spectromicroscopy that bridges the gap betwenn material properties and device performances of 2D materials

• Project/Area Number: 15H03560
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Tohoku University
• Principal Investigator: Fukidome Hirokazu 東北大学, 電気通信研究所, 准教授 (10342841)
• Co-Investigator(Kenkyū-buntansha): 末光 眞希 東北大学, 電気通信研究所, 教授 (00134057)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Project Status: Completed (Fiscal Year 2017)
• Budget Amount: ¥16,900,000 (Direct Cost: ¥13,000,000、Indirect Cost: ¥3,900,000); Fiscal Year 2017: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000); Fiscal Year 2016: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000); Fiscal Year 2015: ¥10,530,000 (Direct Cost: ¥8,100,000、Indirect Cost: ¥2,430,000)
• Keywords: オペランド / X線 / グラフェン / 二次元原子薄膜 / トポロジカル絶縁体 / 光電子分光 / 顕微 / トランジスタ / 顕微分光

Outline of Final Research Achievements

The gap between material properties and device performances of 2D materials inhibits high performance of 2D material-based devices. To solve this gap, we performed studies on a development of operando x-ray spectromicroscopy and its application to novel devices. As a result, we established the method to probe electronics states of surfaces and interfaces of devices with a high spatial resolution (70 nm in lateral direction). By using operando x-ray spectromicroscopy, we developed a novel graphene transistors that enables to the drain current saturation. Furthermore, we observed electronic states of Molybdenum disulfied FET microscopically. Finally, we extended our research into other novel devices, such as topological insulators.

Research Products

• [Int'l Joint Research] Karunya University(インド)
• [Int'l Joint Research] Kwangwoon University(韓国)
• [Journal Article] Fabrication of Multi-Layer Bi2Se3 Devices and Observation of Anomalous Electrical Transport Behaviors (2017)
  • Author(s): G. Venugopal, G.-H. Park, M. Suemitsu and H. Fukidome
  • Journal Title: Materials Science in Semiconductor Processing Volume: 68 Pages: 128-132
  • DOI: 10.1016/j.mssp.2017.06.010
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Solution-based formation of high-quality gate dielectrics on epitaxial graphene by microwave-assisted annealing (2017)
  • Author(s): Kwan-Soo Kim, Goon-Ho Park, Hirokazu Fukidome, Tetsuya Suemitsu, Taiichi Otsuji, Won-Ju Cho, Maki Suemitsu
  • Journal Title: Japanese Journal of Applied Physics Volume: 56 Issue: 6S1 Pages: 06GF09-06GF09
  • DOI: 10.7567/jjap.56.06gf09
  • NAID: 210000147883
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Suppression of supercollision carrier cooling in high mobility graphene on SiC(0001) (2017)
  • Author(s): Takashi Someya, Hirokazu Fukidome, Hiroshi Watanabe, Takashi Yamamoto, Masaru Okada, Hakuto Suzuki, Yu Ogawa, Takushi Iimori, Nobuhisa Ishii, Teruto Kanai, Keiichiro Tashima, Baojie Feng, Susumu Yamamoto, Jiro Itatani, Fumio Komori, Kozo Okazaki, Shik Shin, and Iwao Matsuda
  • Journal Title: PHYSICAL REVIEW B Volume: 95 Issue: 16 Pages: 165303-165303
  • DOI: 10.1103/physrevb.95.165303
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Observation of nanoscopic charge-transfer region at metal/MoS2 interface (2016)
  • Author(s): R. Suto, G. Venugopal. K. Tashima, N. Nagamura, K. Horiba, M. Suemitsu, M. Oshima, and H. Fukidome
  • Journal Title: Materials Research Express Volume: 3 Issue: 7 Pages: 075004-075004
  • DOI: 10.1088/2053-1591/3/7/075004
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Presentation] オペランド顕微X線分光による二次元電子系電子デバイスの動作機構の定量的解明 (2017)
  • Author(s): 吹留博一
  • Organizer: 日本顕微鏡学会「その場観察研究部会」
  • Invited
• [Presentation] Quantification of Surface Electron Trapping of GaN Transistors by Using Operando Soft X-ray Photoelectron Nanospectroscopy (2017)
  • Author(s): H. Fukidome, K. Omika, Y. Tateno, T. Kouchi, T. Komatani, N. Nagamura, S. Konno, Y. Takahashi, M. Kotsugi, K. Horiba, M. Suemitsu, M. Oshima
  • Organizer: ISSS-8
  • Int'l Joint Research
• [Presentation] 二次元電子系のオペランド顕微分光 (2017)
  • Author(s): 吹留博一
  • Organizer: 顕微ナノ材料研究会
  • Place of Presentation: 東京理科大学、東京
  • Invited
• [Presentation] オペランド顕微分光を用いた高速グラフェン・トランジスタの開発 (2017)
  • Author(s): 吹留博一
  • Organizer: SPring-8先端デバイス研究会
  • Place of Presentation: 品川APセンター、東京
  • Invited
• [Presentation] グラフェン関連物質のオペランド顕微分光 (2016)
  • Author(s): 吹留博一
  • Organizer: SPring-8成果報告会
  • Place of Presentation: キャンパスプラザ京都、京都
  • Invited
• [Presentation] Operando spectromicroscopy on graphene transistors (2016)
  • Author(s): Hirokazu Fukidome
  • Organizer: Global Graphene Forum
  • Place of Presentation: Stockholm, Sweden
  • Int'l Joint Research / Invited
• [Presentation] オペランド顕微X線分光を用いた次世代高速トランジスタの開発 (2016)
  • Author(s): 吹留博一
  • Organizer: 資源・素材学会
  • Place of Presentation: 岩手大学、岩手
  • Invited
• [Presentation] 二次元原子薄膜は使えるのか？ (2016)
  • Author(s): 吹留博一
  • Organizer: セミコンファレンス（電気化学会東北支部）
  • Place of Presentation: 浅虫温泉、青森
  • Invited
• [Presentation] オペランド顕微分光を用いた二次元電子系デバイスの開発 (2016)
  • Author(s): 吹留博一
  • Organizer: 第36回表面科学会講演大会、名古屋国際会議場、2016.11.29.
  • Place of Presentation: 名古屋国際会議場、名古屋
  • Invited
• [Presentation] オペランド顕微分光を用いた電子状態の変調の可視化による先端デバイス開発 (2016)
  • Author(s): 吹留博一
  • Organizer: 理化学研究所放射光連携ワークショップ「空間階層構造の可視化と物質科学研究」
  • Place of Presentation: JPタワー、東京
  • Invited
• [Presentation] Operando Analysis of Field-Effect of Graphene Transistors (2015)
  • Author(s): Hirokazu Fukidome
  • Organizer: EMN 2015
  • Place of Presentation: Phuket, Thailand
  • Int'l Joint Research / Invited
• [Presentation] 動作しているデバイスの電子状態の顕微分光法の開拓と学理に基づく二次元電子系デバイスの研究 (2015)
  • Author(s): 吹留博一
  • Organizer: 平成27年度石田實記念財団研究奨励賞受賞講演会
  • Place of Presentation: 青葉記念会館、仙台市
  • Invited
• [Presentation] Operando nanospectroscopy to designate high-performance graphene transistors (2015)
  • Author(s): 吹留博一
  • Organizer: 日本MRS学会
  • Place of Presentation: 横浜市開港記念会館、横浜市
  • Invited
• [Book] 講談社ブルーバックス『すごいぞ！身の回りの表面科学』 (2015)
  • Author(s): 吹留博一（分担執筆）
  • Total Pages: 272
  • Publisher: 講談社
• [Remarks]
  • URL: http://www.suemitsu.riec.tohoku.ac.jp/
• [Remarks] 末光・吹留研究室ホームページ
  • URL: http://www.suemitsu.riec.tohoku.ac.jp/
• [Patent(Industrial Property Rights)] 半導体装置 (2016)
  • Inventor(s): 末光真希、吹留博一、舘野泰範、岡田政也
  • Industrial Property Rights Holder: 国立大学法人東北大学、住友電気工業株式会社
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-242417
  • Filing Date: 2016-12-14
• [Patent(Industrial Property Rights)] 積層体および電子素子 (2016)
  • Inventor(s): 末光真希、吹留博一、舘野泰範、岡田政也
  • Industrial Property Rights Holder: 国立大学法人東北大学、住友電気工業株式会社
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-234445
  • Filing Date: 2016-12-01
• [Patent(Industrial Property Rights)] グラフェントランジスタおよびその製造方法 (2016)
  • Inventor(s): 末光真希、吹留博一、舘野泰範、岡田政也
  • Industrial Property Rights Holder: 国立大学法人東北大学、住友電気工業株式会社
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-234207
  • Filing Date: 2016-12-01
• [Patent(Industrial Property Rights)] 半導体装置 (2016)
  • Inventor(s): 末光真希、吹留博一、舘野泰範、岡田政也
  • Industrial Property Rights Holder: 国立大学法人東北大学、住友電気工業株式会社
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-217291
  • Filing Date: 2016-11-07
• [Patent(Industrial Property Rights)] SiC構造体およびその製造方法並びに半導体装置 (2016)
  • Inventor(s): 末光真希、吹留博一、長澤弘幸、舘野泰範
  • Industrial Property Rights Holder: 国立大学法人東北大学、住友電気工業株式会社
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-172296
  • Filing Date: 2016-09-02
• [Patent(Industrial Property Rights)] グラフェントランジスタおよびその製造方法 (2016)
  • Inventor(s): 末光真希、吹留博一、長澤弘幸、舘野泰範
  • Industrial Property Rights Holder: 国立大学法人東北大学、住友電気工業株式会社
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-141610
  • Filing Date: 2016-07-19
• [Patent(Industrial Property Rights)] 半導体装置 (2016)
  • Inventor(s): 舘野泰範、末光眞希、吹留博一
  • Industrial Property Rights Holder: 国立大学法人東北大学、住友電気工業株式会社
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-058450
  • Filing Date: 2016-04-21
• [Patent(Industrial Property Rights)] 半導体装置 (2016)
  • Inventor(s): 舘野泰範、末光眞希、吹留博一
  • Industrial Property Rights Holder: 国立大学法人東北大学、住友電気工業株式会社
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-058449
  • Filing Date: 2016-04-21
• [Patent(Industrial Property Rights)] 積層体 (2016)
  • Inventor(s): 三橋史典、舘野泰範、末光眞希、吹留博一
  • Industrial Property Rights Holder: 国立大学法人東北大学、住友電気工業株式会社
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-083869
  • Filing Date: 2016-04-19
• [Patent(Industrial Property Rights)] 積層装置 (2016)
  • Inventor(s): 三橋史典、舘野泰範、末光眞希、吹留博一
  • Industrial Property Rights Holder: 国立大学法人東北大学、住友電気工業株式会社
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-083868
  • Filing Date: 2016-04-19
• [Patent(Industrial Property Rights)] 電子素子及び製造法 (2016)
  • Inventor(s): 舘野泰範、末光眞希、吹留博一、長澤弘幸
  • Industrial Property Rights Holder: 国立大学法人東北大学、住友電気工業株式会社
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-036122
  • Filing Date: 2016-02-26
• [Patent(Industrial Property Rights)] 電子素子及び製造法 (2016)
  • Inventor(s): 舘野泰範、末光眞希、吹留博一、長澤弘幸
  • Industrial Property Rights Holder: 国立大学法人東北大学、住友電気工業株式会社
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-036123
  • Filing Date: 2016-02-26
• [Patent(Industrial Property Rights)] 電子素子及び製造法 (2016)
  • Inventor(s): 舘野泰範、末光眞希、吹留博一、長澤弘幸
  • Industrial Property Rights Holder: 国立大学法人東北大学、住友電気工業株式会社
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-036124
  • Filing Date: 2016-02-16