Low Resistance Metal/Germanium Contacts by Alleviation of Fermi Level Pinning Phenomenon
| Project/Area Number |
15H03565
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Nagoya University |
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Principal Investigator |
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥17,030,000 (Direct Cost: ¥13,100,000、Indirect Cost: ¥3,930,000)
Fiscal Year 2017: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2016: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2015: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
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| Keywords | 界面 / 集積回路 / ゲルマニウム / コンタクト / ショットキー障壁 / ゲルマニウム錫 / ドーピング |
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| Outline of Final Research Achievements |
We have developed the technology for lowering the contact resistivity at metal/Ge interface for the application of high-mobility semiconductor material, germanium (Ge). The purpose of this research project was the clarification of the interface properties and the establishment of controlling technology of the electrical conduction properties of metal/Ge(Sn) contact for the application of novel Ge-related alloy materials; germanium-tin (GeSn) and silicon-germanium-tin (SiGeSn). As results, we have successfully demonstrated Schottky barrier height engineering by the introduction of the GeSn and SiGeSn interlayer and the formation of metal germanide epitaxial layer/Ge contacts. Also, we have achieved the formation of heavily Sb-doped Ge(Sn) epitaxial layer and demonstrate the formation of a metal/n-Ge(Sn) contact with an ultralow contact resistivity lower than 1E-8 /Ωcm^2.
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Report
(4 results)
Research Products
(53 results)
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[Presentation] Growth and applications of GeSn-related group-IV semiconductor materials2016
Author(s)
S. Zaima, O. Nakatsuka, T. Asano, T. Yamaha, S. Ike, A. Suzuki, K. Takahashi, Y. Nagae, M. Kurosawa, W. Takeuchi, Y. Shimura, and M. Sakashita
Organizer
IEEE 2016 Summer Topicals Meeting Series
Place of Presentation
NewPort Beach, USA
Year and Date
2016-07-11
Related Report
Int'l Joint Research / Invited
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[Presentation] Reduction of Schottky barrier height with Sn/Ge contact2015
Author(s)
A. Suzuki, O. Nakatsuka, S. Shibayama, M. Sakashita, W. Takeuchi, M. Kurosawa, and S. Zaima
Organizer
JSPS International Workshop Core-to-Core Program Atomically Controlled Processing for Ultra-large Scale Integration
Place of Presentation
Marseille, France
Year and Date
2015-07-09
Related Report
Int'l Joint Research
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