Establishment of analysis of single nanowire by atom probe tomography in combination with transmission electron microscopy

• Project/Area Number: 15H05413
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Nanomaterials engineering
• Research Institution: Tohoku University
• Principal Investigator: Shimizu Yasuo 東北大学, 金属材料研究所, 助教 (40581963)
• Research Collaborator: FUKATA Naoki 物質・材料研究機構, 主任研究員 (90302207) ; INOUE Koji 東北大学, 金属材料研究所, 准教授 (50344718) ; NAGAI Yasuyoshi 東北大学, 金属材料研究所, 教授 (10302209)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Project Status: Completed (Fiscal Year 2017)
• Budget Amount: ¥24,180,000 (Direct Cost: ¥18,600,000、Indirect Cost: ¥5,580,000); Fiscal Year 2017: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2016: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000); Fiscal Year 2015: ¥16,380,000 (Direct Cost: ¥12,600,000、Indirect Cost: ¥3,780,000)
• Keywords: ３次元アトムプローブ / 透過電子顕微鏡 / ナノワイヤ / 量子構造 / 半導体

Outline of Final Research Achievements

A study of nanowire has been attracting much interest as a future gate-all-around quantum device in the state-of-the-art research. In order to understand the influence of crystal defects induced during growth on electrical property, the relationship between the dopants and defects needs to be clarified. In this study, atom probe tomography combined with transmission electron microscopy for obtaining dopant and defect distributions, respectively, in real space in a core-shall nanowire composed of silicon and germanium, was utilized. We have established an effective pick-up method of an arbitrary single nanowire by using a manipulator equipped in focused ion beam apparatus, and mounting on micropost prior to atom probe measurements at a high successful rate. Our experimental strategy can reveal defect distribution and elemental mapping in nanowires, and lead to clear understanding their relationship.

Research Products

• [Journal Article] Blocking of deuterium diffusion in poly-Si/Al2O3/HfxSi1?xO2/SiO2 high-k stacks as evidenced by atom probe tomography (2018)
  • Author(s): Tu Y.、Han B.、Shimizu Y.、Kunimune Y.、Shimada Y.、Katayama T.、Ide T.、Inoue M.、Yano F.、Inoue K.、Nagai Y.
  • Journal Title: Appl. Phys. Lett. Volume: 112 Issue: 3 Pages: 032902-032902
  • DOI: 10.1063/1.5010256
  • Peer Reviewed
• [Journal Article] Composition evolution of gamma prime nanoparticles in the Ti-doped CoFeCrNi high entropy alloy (2018)
  • Author(s): Han Bin、Wei Jie、Tong Yang、Chen Da、Zhao Yilu、Wang Jing、He Feng、Yang Tao、Zhao Can、Shimizu Yasuo、Inoue Koji、Nagai Yasuyoshi、Hu Alice、Liu Chain Tsuan、Kai Ji Jung
  • Journal Title: Scripta Materialia Volume: 148 Pages: 42-46
  • DOI: 10.1016/j.scriptamat.2018.01.025
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Industrial application of atom probe tomography to semiconductor devices (2018)
  • Author(s): A. D. Giddings, S. Koelling, Y. Shimizu, R. Estivill, K. Inoue, W. Vandervorst, and W. K. Yeoh
  • Journal Title: Scripta Materialia Volume: 148 Pages: 82-90
  • DOI: 10.1016/j.scriptamat.2017.09.004
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Room-temperature 1.54 um photoluminescence from Er:Ox centers at extremely low concentration in silicon (2017)
  • Author(s): M. Celebrano, L. Ghirardini, M. Finazzi, Y. Shimizu, Y. Tu, K. Inoue, Y. Nagai, T. Shinada, Y. Chiba, A. Abderghafar, M. Yano, T. Tanii, E. Prati
  • Journal Title: Opt. Lett. 42 (2017) 3311 Volume: 42 Issue: 17 Pages: 3311-3314
  • DOI: 10.1364/ol.42.003311
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Atom probe tomographic assessment of the distribution of germanium atoms implanted in a silicon matrix through nano-apertures (2017)
  • Author(s): Tu Y、Han B、Shimizu Y、Inoue K、Fukui Y、Yano M、Tanii T、Shinada T、Nagai Y
  • Journal Title: Nanotechnology Volume: 28 Issue: 38 Pages: 385301-385301
  • DOI: 10.1088/1361-6528/aa7f49
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations (2017)
  • Author(s): OHNO Y.、INOUE K.、FUJIWARA K.、KUTSUKAKE K.、DEURA M.、YONENAGA I.、EBISAWA N.、SHIMIZU Y.、INOUE K.、NAGAI Y.、YOSHIDA H.、TAKEDA S.、TANAKA S.、KOHYAMA M.
  • Journal Title: Microscopy Volume: 268 Issue: 3 Pages: 230-238
  • DOI: 10.1111/jmi.12602
  • Peer Reviewed
• [Journal Article] Influence of laser power on atom probe tomographic analysis of boron distribution in silicon (2017)
  • Author(s): Y. Tu, H. Takamizawa, B. Han, Y. Shimizu, K. Inoue, T. Toyama, F. Yano, A. Nishida, Y. Nagai
  • Journal Title: Ultramicroscopy Volume: 173 Pages: 58-63
  • DOI: 10.1016/j.ultramic.2016.11.023
  • Peer Reviewed
• [Journal Article] Impact of local atomic stress on oxygen segregation at tilt boundaries silicon (2017)
  • Author(s): Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
  • Journal Title: Applied Physics Letters Volume: 110 Issue: 6
  • DOI: 10.1063/1.4975814
  • Peer Reviewed
• [Journal Article] Weak-beam scanning transmission electron microscopy for quantitative dislocation density measurement in steels (2017)
  • Author(s): K. Yoshida, M. Shimodaira, T. Toyama, Y. Shimizu, K. Inoue, T. Yoshiie, K. J. Milan, R. Gerard, Y. Nagai
  • Journal Title: Microscopy Volume: 66 Pages: 120-130
  • DOI: 10.1093/jmicro/dfw111
  • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography (2016)
  • Author(s): Y. Kunimune, Y. Shimada, Y. Sakurai, M. Inoue, A. Nishida, B. Han, Y. Tu, H. Takamizawa, Y. Shimizu, K. Inoue, F. Yano, Y. Nagai, T. Katayama, and T. Ide
  • Journal Title: AIP Advances Volume: 6 Issue: 4
  • DOI: 10.1063/1.4948558
  • Peer Reviewed / Open Access
• [Journal Article] Predoping effects of boron and phosphorous on arsenic diffusion along grain boundaries in polycrystalline silicon investigated by atom probe tomography (2016)
  • Author(s): H. Takamizawa, Y. Shimizu, K. Inoue, Y. Nozawa, T. Toyama, F. Yano, M. Inoue, A. Nishida, Y. Nagai
  • Journal Title: Applied Physics Express Volume: 9 Issue: 10 Pages: 253-256
  • DOI: 10.7567/apex.9.106601
  • NAID: 210000138076
  • Peer Reviewed
• [Journal Article] Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals (2016)
  • Author(s): Y. Ohno, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda
  • Journal Title: Applied Physics Letters Volume: 109 Issue: 14
  • DOI: 10.1063/1.4964440
  • Peer Reviewed
• [Journal Article] Boron distributions in individual core-shell Ge/Si and Si/Ge heterostructured nanowires (2016)
  • Author(s): B. Han, Y. Shimizu, J. Wipakorn, K. Nishibe, Y. Tu, K. Inoue, N. Fukata, Y. Nagai
  • Journal Title: Nanoscale Volume: 8 Issue: 47 Pages: 19811-19815
  • DOI: 10.1039/c6nr04384d
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Impact of carbon co-implantation on boron distribution and activation in silicon studied by atom probe tomography and spreading resistance measurements (2016)
  • Author(s): Y. Shimizu, H. Takamizawa, K. Inoue, F. Yano, S. Kudo, A. Nishida, T. Toyama, and Y. Nagai
  • Journal Title: Japanese Journal of Applied Physics Volume: 55 Issue: 2 Pages: 026501-026501
  • DOI: 10.7567/jjap.55.026501
  • NAID: 210000146038
  • Peer Reviewed
• [Journal Article] Evolution of shape, size, and areal density of a single plane of Si nanocrystals embedded in SiO2 matrix studied by atom probe tomography (2016)
  • Author(s): B. Han, Y. Shimizu, G. Seguini, E. Arduca, C. Castro, G. Ben Assayag, K. Inoue, Y. Nagai, S. Schamm-Chardon, and M. Perego
  • Journal Title: RSC Advances Volume: 6 Issue: 5 Pages: 3617-3622
  • DOI: 10.1039/c5ra26710b
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Suppression of segregation of the phosphorus δ-doping layer in germanium by incorporation of carbon (2016)
  • Author(s): M. Yamada, K. Sawano, M. Uematsu, Y. Shimizu, K. Inoue, Y. Nagai, and K. M. Itoh
  • Journal Title: Japanese Journal of Applied Physics Volume: 55 Issue: 3 Pages: 031304-031304
  • DOI: 10.7567/jjap.55.031304
  • NAID: 210000146129
  • Peer Reviewed
• [Presentation] シリコン中に形成されたエルビウム不均一分布の３次元アトムプローブ評価 (2017)
  • Author(s): 清水康雄, Yuan Tu, アブデルガファ愛満, 矢野真麻, 鈴木雄大, 谷井孝至, 品田高宏, Enrico Prati, 井上耕治, 永井康介
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜、横浜
  • Year and Date: 2017-03-14
• [Presentation] Atom probe tomographic study on implanted deuterium in Al2O3/HfxSi1-xO2/SiO2 stacks (2017)
  • Author(s): Y. Tu, B. Han, Y. Shimizu, Y. Kunimune, Y. Shimada, M. Inoue, K. Inoue, S. Nagata, and Y. Nagai
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜、横浜
  • Year and Date: 2017-03-14
• [Presentation] Dopant detection in silicon nanostructures by atom probe tomography (2017)
  • Author(s): Y. Shimizu and K. Inoue
  • Organizer: 4th Bilateral Italy-Japan Seminar: Innovative Solutions for Single Atom Applications in Photonics and Nanoelectronics
  • Int'l Joint Research / Invited
• [Presentation] Atom probe study of erbium and oxygen co-implanted silicon (2017)
  • Author(s): Y. Shimizu, Y. Tu, A. Abdelghafar, M. Yano, Y. Suzuki, T. Tanii, T. Shinada, E. Prati, M. Celebrano, M. Finazzi, L. Ghirardini, K. Inoue, and Y. Nagai
  • Organizer: 2017 Silicon Nanoelectronics Workshop
  • Int'l Joint Research
• [Presentation] Atom probe study of semiconductor-based nanostructure (2017)
  • Author(s): Y. Shimizu
  • Organizer: 15th International Conference on Advanced Materials
  • Int'l Joint Research / Invited
• [Presentation] Effect of carbon on boron clustering and diffusion in silicon studied by atom probe tomography (2017)
  • Author(s): Y. Tu, Y. Shimizu, M. Inoue, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, K. Inoue, and Y. Nagai
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] シリコン中に共注入した酸素がエルビウム分布に与える影響 (2017)
  • Author(s): 清水康雄, Yuan Tu, アブデルガファ愛満, 鈴木雄大, 魏啓楠, 谷井孝至, 品田高宏, Enrico Prati, Michele Celebrano, Marco Finazzi, Lavinia Ghirardini, 井上耕治, 永井康介
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] Direct observation of trapping of implanted deuterium in poly-Si/Al2O3/HfxSi1-xO2/SiO2 high-k stacks (2017)
  • Author(s): Y. Tu, B. Han, Y. Shimizu, M. Inoue, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, S. Nagata, K. Inoue, and Y. Nagai
  • Organizer: 2017 Materials Research Society Fall Meeting & Exhibit
  • Int'l Joint Research
• [Presentation] Dopant distribution analysis core-shell nanowires by atom probe tomography (2017)
  • Author(s): Y. Shimizu, B. Han, W. Jevasuwan, K. Nishibe, Y. Tu, K. Inoue, N. Fukata, and Y. Nagai
  • Organizer: 2017 Materials Research Society Fall Meeting & Exhibit
  • Int'l Joint Research
• [Presentation] ３次元アトムプローブ法を用いた材料解析：原理と応用 (2017)
  • Author(s): 清水康雄
  • Organizer: 日本学術振興会 結晶加工と評価技術 第145委員会第156回研究会
  • Invited
• [Presentation] 半導体・酸化物材料の３次元アトムプローブ分析 (2016)
  • Author(s): 清水康雄
  • Organizer: 第26回日本MRS年次大会
  • Place of Presentation: 産業貿易センタービル、横浜
  • Year and Date: 2016-12-19
  • Invited
• [Presentation] Hydrogen distribution analysis in Al2O3 films by atom probe tomography (2016)
  • Author(s): Y. Shimizu, B. Han, Y. Tu, K. Inoue, F. Yano, M. Inoue, Y. Kunimune, Y. Shimada, T. Katayama, T. Ide, and Y. Nagai
  • Organizer: 2016 Materials Research Society Fall Meeting & Exhibit
  • Place of Presentation: ボストン、米国
  • Year and Date: 2016-11-27
  • Int'l Joint Research
• [Presentation] Direct observation of single ion implanted dopants distribution in silicon by atom probe tomography (2016)
  • Author(s): Y. Tu, B. Han, Y. Shimizu, K. Inoue, M. Yano, Y. Chiba, T. Tanii, T. Shinada, and Y. Nagai
  • Organizer: 2016 Materials Research Society Fall Meeting & Exhibit
  • Place of Presentation: ボストン、米国
  • Year and Date: 2016-11-27
  • Int'l Joint Research
• [Presentation] Characterization of Si nanocrystals embedded in SiO2 matrix by atom probe tomography (2016)
  • Author(s): B. Han, Y. Shimizu, G. Seguini, E. Arduca, C. Castro, G. Ben Assayag, K. Inoue, Y. Nagai, S. Schamm-Chardon, and M. Perego
  • Organizer: Energy Materials and Nanotechnology (EMN) Meeting on Nanocrystals
  • Place of Presentation: 西安、中国
  • Year and Date: 2016-10-17
  • Int'l Joint Research / Invited
• [Presentation] Three-dimensional analysis of phosphorus-doped Si nanocrystals embedded in SiO2 matrix by atom probe tomography (2016)
  • Author(s): Y. Shimizu, B. Han, G. Seguini, E. Arduca, C. Castro, G. Ben Assayag, K. Inoue, Y. Nagai, S. Schamm-Chardon, and M. Perego
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ、新潟
  • Year and Date: 2016-09-13
• [Presentation] Influence of high power laser on B distribution in Si obtained by atom probe tomography (2016)
  • Author(s): Y. Tu, H. Takamizawa, Y. Shimizu, K. Inoue, T. Toyama, F. Yano, A. Nishida, and Y. Nagai
  • Organizer: Atom Probe Tomography & Microscopy 2016
  • Place of Presentation: 慶州、韓国
  • Year and Date: 2016-06-12
  • Int'l Joint Research
• [Presentation] Atom probe study of structural characteristics of Si nanocrystals embedded in SiO2 matrix (2016)
  • Author(s): B. Han, Y. Shimizu, G. Seguini, E. Arduca, C. Castro, G. Ben Assayag, K. Inoue, Y. Nagai, S. Schamm-Chardon, and M. Perego
  • Organizer: Atom Probe Tomography & Microscopy 2016
  • Place of Presentation: 慶州、韓国
  • Year and Date: 2016-06-12
  • Int'l Joint Research
• [Presentation] Characterization of boron doping in individual Ge/Si core-shell nanowires investigated by atom probe tomography (2016)
  • Author(s): B. Han, Y. Shimizu, K. Inoue, W. Jevasuwan, N. Fukata, and Y. Nagai
  • Organizer: 2016 Materials Research Society Spring Meeting
  • Place of Presentation: Phoenix, Arizona, USA
  • Year and Date: 2016-03-28
  • Int'l Joint Research
• [Presentation] Characterization of dopant in individual Si/Ge core-shell nanowires investigated by atom probe tomography (2016)
  • Author(s): B. Han, Y. Shimizu, W. Jevasuwan, K. Nishibe, K. Inoue, N. Fukata, and Y. Nagai
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学大岡山キャンパス
  • Year and Date: 2016-03-19
• [Presentation] ３次元アトムプローブ法の半導体応用の現状と最近の話題 (2016)
  • Author(s): 清水康雄
  • Organizer: 日本学術振興会 ナノプローブテクノロジー 第167委員会 第81回研究会
  • Place of Presentation: 東京大学駒場キャンパス
  • Year and Date: 2016-01-12
  • Invited
• [Presentation] 先端ナノエレクトロニクス材料の元素分布分析 (2016)
  • Author(s): 清水康雄
  • Organizer: 第106回総研セミナー
  • Place of Presentation: 東京都市大学総合研究所
  • Invited
• [Presentation] 先端デバイス開発のための３次元アトムプローブ分析技術の応用例 (2016)
  • Author(s): 清水康雄
  • Organizer: カメカテクニカルセミナー2016
  • Place of Presentation: くるまプラザ貸会議室、東京
  • Invited
• [Presentation] Boron distribution in individual Ge/Si core-shell nanowires investigated by atom probe tomography (2015)
  • Author(s): B. Han, Y. Shimizu, K. Inoue, W. Jevasuwan, N. Fukata, and Y. Nagai
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場
  • Year and Date: 2015-09-13
• [Presentation] Elemental distributions in semiconductor-based device structures analyzed by atom probe tomography (2015)
  • Author(s): Y. Shimizu, B. Han, Y. Tu, K. Inoue, and Y. Nagai
  • Organizer: 2015 International Symposium for Advanced Materials Research
  • Place of Presentation: 日月潭、台湾
  • Year and Date: 2015-08-16
  • Int'l Joint Research / Invited
• [Remarks] 永井研究室（清水康雄）
  • URL: http://wani.imr.tohoku.ac.jp/yshimizu.html
• [Remarks] 東北大学研究者紹介（清水康雄）
  • URL: http://db.tohoku.ac.jp/whois/detail/bdade9d3e1da0c7a19d6872a59445e4e.html