Sputter Epitaxy of high-quality oxynitride semiconductors for optical switching devices
| Project/Area Number |
15H05431
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Plasma electronics
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| Research Institution | Kyushu University |
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Principal Investigator |
Itagaki Naho 九州大学, システム情報科学研究院, 准教授 (60579100)
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| Project Period (FY) |
2015-04-01 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2018)
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| Budget Amount *help |
¥23,140,000 (Direct Cost: ¥17,800,000、Indirect Cost: ¥5,340,000)
Fiscal Year 2017: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2016: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
Fiscal Year 2015: ¥12,350,000 (Direct Cost: ¥9,500,000、Indirect Cost: ¥2,850,000)
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| Keywords | スパッタリング / エキシトントランジスタ / 酸窒化インジウム亜鉛 / 量子井戸 / 逆Stranski-Krastanovモード / 格子不整合 / エピタキシー / プラズマエレクトロニクス / エキシトン / トランジスタ / 結晶成長 / ZION / 逆SKモード |
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| Outline of Final Research Achievements |
We developed new semiconducting materials, (ZnO)x(InN)1-x (hereafter called ZION) for exciton transistors, synthesized by sputter epitaxy. The large exciton binding energy enables excitonic devices that are operational at room temperature. The large piezoelectric constant enhances the spatial separation of electrons and holes in quantum wells and thus elongates exciton lifetime. Fabrication of single crystalline ZION films, however, has been challenging because no bulk crystals of ZION exist. In this project, we succeeded in the growth of world’s first single crystalline ZION on 18%-lattice-mismatched sapphire substrate, in which the films grew in a new mode of heteroepitaxy, “inverse Stranski-Krastanov mode”, where high-density three dimensional (3D) islands initially form and two-dimensional (2D) layers subsequently grow on the 3D islands. Furthermore, we succeeded in optical switching of exciton transistors with ZION/ZnO QWs.
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| Academic Significance and Societal Importance of the Research Achievements |
本研究は，E/O変換の小型化と高速化を同時に達成するエキシトントランジスタの室温動作可能性を示したものである．これが実用化されれば，光電子集積回路の実現を可能にし，従来エレクトロニクスでは達成し得ない高速・低消費電力LSIに発展すると期待される．また，本研究で用いた単結晶成長法は，代表者が発見した「逆SKモード」の成長機構に立脚した斬新な手法である．薄膜材料と基板の組み合わせ自由度を飛躍的に高める，従来にない革新材料・デバイスの創出につながるものである．これが普遍化すれば，今後様々な薄膜形成に革新をもたらすと期待される．
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Report
(4 results)
Research Products
(106 results)
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[Journal Article] Measurements of nitrogen atom density in N2/Ar sputtering plasma for fabrication of high-mobility amorphous In2O3:Sn films2015
Author(s)
T. Takasaki, T. Ide, K. Matsushima, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki
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Journal Title
Proc. 68th GEC/9th ICRP/33rd SPP
Volume: 60
Related Report
Peer Reviewed / Acknowledgement Compliant
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[Journal Article] Measurement of absolute density of N atom in sputtering plasma for epitaxial growth ZnO films via nitrogen mediated crystallization2015
Author(s)
T. Ide, K. Matsushima, T. Takasaki, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M, Shiratani, N. Itagaki
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Journal Title
Proc. 68th GEC/9th ICRP/33rd SPP
Volume: 60
Related Report
Peer Reviewed / Acknowledgement Compliant
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[Journal Article] Real-time mass measurement of dust particles deposited on vessel wall in a divertor simulator using quartz crystal microbalances2015
Author(s)
M. Tateishi, K. Koga, R. Katayama, D. Yamashita, K. Kamataki, H. Seo, N. Itagaki, M. Shiratani, N. Ashikawa, S. Masuzaki, K. Nishimura, A. Sagara, and the LHD Experiment Group
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Journal Title
J Nucl Mater
Volume: 463
Pages: 865-868
DOI
Related Report
Peer Reviewed / Acknowledgement Compliant
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[Presentation] Measurements of Absolute N Atom Density in Ar/N2 Sputtering Plasma during Heteroepitaxial Growth of Single Crystalline ZnO Films on Sapphire Substrates2016
Author(s)
K. Iwasaki, T. Ide, K. Matsushima, T. Takasaki, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki
Organizer
2016 MRS Fall Meeting & Exhibit
Place of Presentation
Boston, Massachusetts, USA
Related Report
Int'l Joint Research
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[Presentation] Measurements of nitrogen atom density in N2/Ar sputtering plasma for fabrication of high-mobility amorphous In2O3:Sn films2015
Author(s)
T. Takasaki, T. Ide, K. Matsushima, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki
Organizer
ICRP9/GEC68/SPP33
Place of Presentation
Hawaii Convention Center, USA
Year and Date
2015-10-12
Related Report
Int'l Joint Research
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[Presentation] Measurement of absolute density of N atom in sputtering plasma for epitaxial growth ZnO films via nitrogen mediated crystallization2015
Author(s)
T. Ide, K. Matsushima, T. Takasaki, K. Takeda, M. Hori, D. Yamashita, H. Seo, K. Koga, M. Shiratani, N. Itagaki
Organizer
ICRP9/GEC68/SPP33
Place of Presentation
Hawaii Convention Center, USA
Year and Date
2015-10-12
Related Report
Int'l Joint Research
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