Development of novel properties of strongly-correlated oxide nano-devices under electric field
| Project/Area Number |
15H05499
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Single-year Grants |
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| Research Field |
Device related chemistry
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| Research Institution | The University of Tokyo |
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Principal Investigator |
Nakano Masaki 東京大学, 大学院工学系研究科(工学部), 特任講師 (70592228)
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| Project Period (FY) |
2015-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥24,830,000 (Direct Cost: ¥19,100,000、Indirect Cost: ¥5,730,000)
Fiscal Year 2016: ¥9,360,000 (Direct Cost: ¥7,200,000、Indirect Cost: ¥2,160,000)
Fiscal Year 2015: ¥15,470,000 (Direct Cost: ¥11,900,000、Indirect Cost: ¥3,570,000)
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| Keywords | 表面・界面物性 / 強相関エレクトロニクス / 電界効果 / 物性実験 |
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| Outline of Final Research Achievements |
We have demonstrated so far that the field-effect transistors (FET) enables electrical control of the state of matter by external voltage. On the other hand, FET should in principle enable continuous change in the number of electrons in a solid, providing a very powerful tool for developing electronic phase diagram as a function of the number of carriers. From this viewpoint, we have developed novel properties of cuprate superconductor nano-devices under electric field. Then, for La2-xCexCuO4, a representative electron-doped cuprate superconductor, we realized the insulator-to-superconductor transition by the electric-field effect, and revealed the existence of the charge-order phase in the underdoped regime from a detailed examination of the electronic phase diagram while precisely changing the number of electrons.
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Report
(3 results)
Research Products
(15 results)
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[Journal Article] Distinct substrate effect on the reversibility of the metal-insulator transitions in electrolyte-gated VO2 thin films2015
Author(s)
M. Nakano, D. Okuyama, K. Shibuya, M. Mizumaki, H. Ohsumi, M. Yoshida, M. Takata, M. Kawasaki, Y. Tokura, T. Arima, Y. Iwasa
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Journal Title
Advanced Electronic Materials
Volume: 1
Issue: 7
Pages: 1500093-1500093
DOI
Related Report
Peer Reviewed / Acknowledgement Compliant
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