| Budget Amount *help |
¥23,270,000 (Direct Cost: ¥17,900,000、Indirect Cost: ¥5,370,000)
Fiscal Year 2017: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2016: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
Fiscal Year 2015: ¥11,180,000 (Direct Cost: ¥8,600,000、Indirect Cost: ¥2,580,000)
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| Outline of Final Research Achievements |
Resistive random access memories have been attracting much attention because of their potential as nonvolatile memory devices owing to the simplicity of their structure, low power consumption, high scalability, and fast response. Si oxides attracted our particular interest, because of their good compatibility with the current Si-ULSI technology. In this study, defect distribution and resistive switching behaviors of Si rich oxide has been studied. We have successfully developed the total photoelectron yield spectroscopy system with wide measurement energy range from ~3 eV to ~10 eV, whicn enables us us to evaluate the energy distribution of filled electronic states in the bandgap of Si oxide with a high enough sensitivity. And also, improvement of resistive swiching behaviors of Si oxide by embedding of Ti nanodots have been demonstrated.
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