| Budget Amount *help |
¥21,580,000 (Direct Cost: ¥16,600,000、Indirect Cost: ¥4,980,000)
Fiscal Year 2017: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2016: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2015: ¥9,100,000 (Direct Cost: ¥7,000,000、Indirect Cost: ¥2,100,000)
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| Outline of Final Research Achievements |
Direct synthesis of graphene on an insulating substrate by gallium vapor as a catalyst was developed. From the observation of the initial growth process of graphene, the crystal nuclei were generated at the initial stage of graphene growth, and then, crystal nuclei grew, and the nuclei were connected to each other. In addition, the atomic level structure analysis by the high-resolution transmission electron microscope showed that the crystal domain size of graphene was in the range from 50 to 200 nm, and the inside of the domain was perfect crystal structure without any defects.
Planar type electron emission devices based on a graphene-oxide-semiconductor structure were fabricated by using the developed direct synthesis method of graphene. Their electron emission properties were further evaluated. It is found that the electron emission efficiency improves by 100 times or more compared with the conventional device.
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