Defect Evaluation of InAlN after Device Process and their Electrical Properties

• Project/Area Number: 15H06070
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Electronic materials/Electric materials
• Research Institution: University of Tsukuba
• Principal Investigator: OKUMURA Hironori 筑波大学, 数理物質系, 助教 (80756750)
• Research Collaborator: UEDONO Akira ; GRANDJEAN Nicolas ; PALACIOS Tomas ; SUIHKONEN Sami
• Project Period (FY): 2015-08-28 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000); Fiscal Year 2016: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
• Keywords: パワーデバイス / 窒化物半導体 / 点欠陥 / 結晶成長 / 電気的特性評価 / p型半導体 / イオン注入 / 高温熱処理 / AlN / 高電界効果トランジスタ / アニール / 接触抵抗 / 窒素極性面 / 電気・電子材料 / 格子欠陥 / 半導体物性 / 電子デバイス・機器 / 高濃度p型ドーピング / バックワードダイオード / トンネル電流 / アンモニアMBE

Outline of Final Research Achievements

In this work, we aimed to improve the performance of III-nitrides electrical devices, which have attracted much attention for high-frequency and high-power applications. There are fewer reports on point defects in comparison with dislocations in III-nitride semiconductors. We investigated the relation between point defects and electrical properties in p-type GaN and n-type AlN films.
(i) The highest hole concentrations was achieved in the p-type GaN layer, which was grown at low growth temperature under nitrogen-rich conditions.
(ii) The n-type conductance of Si-ion implanted AlN was shown after very high temperature annealing of 1500 degreeC. Using the n-type AlN films, the first demonstration of AlN-channel transistors was achieved.

Research Products

• [Int'l Joint Research] Massachusetts Institute of Technology(米国)
• [Int'l Joint Research] Aalto Univeristy(Finland)
• [Int'l Joint Research] Ecole Polytechnique Frale de Lausanne(Switzerland)
• [Int'l Joint Research] Massachusetts Institute of Technology(米国)
• [Int'l Joint Research] Otto-von-Guericke Universitt Magdeburg(Germany)
• [Int'l Joint Research] Semiconductor Technology Research(ロシア連邦)
• [Journal Article] Low p-type contact resistance by field-emission tunneling in highly Mg-doped GaN (2016)
  • Author(s): Hironori Okumura, Denis Martin, Nicolas Grandjean
  • Journal Title: Applied Physics Letter Volume: 109 Issue: 25 Pages: 252101-252101
  • DOI: 10.1063/1.4972408
  • NAID: 120007135102
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Vacancy-type defects in Mg-doped GaN grown by ammonia-based molecular beam epitaxy probed using a monoenergetic positron beam (2016)
  • Author(s): Akira Uedono, Marco Malinverni, Denis Martin, Hironori Okumura, Shoji Ishibashi, Nicolas Grandjean
  • Journal Title: Journal of Applied Physics Volume: 119 Issue: 24 Pages: 245702-245702
  • DOI: 10.1063/1.4954288
  • NAID: 120007129545
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Backward diodes using heavily Mg-doped GaN growth by ammonia molecular-beam epitaxy (2016)
  • Author(s): Hironori Okumura, Denis Martin, Marco Malinverni, Nicolas Grandjean
  • Journal Title: Applied Physics Letters Volume: 108 Issue: 7 Pages: 072102-072102
  • DOI: 10.1063/1.4942369
  • NAID: 120007135561
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Presentation] Electrical Properties of Mg-doped GaN with High Acceptor Concentrations (2016)
  • Author(s): Hironori Okumura, Marco Malinverni, Denis Martin, and Nicolas Grandjean
  • Organizer: 2016 Materials Research Societies Fall meeting,
  • Place of Presentation: Boston US
  • Year and Date: 2016-11-27
  • Int'l Joint Research
• [Presentation] High p-type GaN for advanced optoelectronic devices (2016)
  • Author(s): Hironori Okumura, Denis Martin, Marco Malinverni, Nicolas Grandjean
  • Organizer: 2016 IEEE PHOTONICS CONFERENCE, 29TH ANNUAL CONFERENCE OF THE IEEE PHOTONICS SOCIETY
  • Place of Presentation: Hilton Waikoloa Village Waikoloa, Hawaii USA
  • Year and Date: 2016-10-02
  • Int'l Joint Research / Invited
• [Presentation] Electrical Properties of Mg-doped GaN with High Acceptor Concentrations (2016)
  • Author(s): Hironori Okumura, Marco Malinverni, Denis Martin, and Nicolas Grandjean
  • Organizer: 19th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: Montpellier France
  • Year and Date: 2016-09-04
  • Int'l Joint Research