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SRAMセルにおけるばらつきの影響とその抑制方法

Research Project

Project/Area Number 15J09095
Research Category

Grant-in-Aid for JSPS Fellows

Allocation TypeSingle-year Grants
Section国内
Research Field Electron device/Electronic equipment
Research InstitutionThe University of Tokyo

Principal Investigator

QIU HAO  東京大学, 生産技術研究所, 特別研究員(PD)

Project Period (FY) 2015-04-24 – 2017-03-31
Project Status Completed (Fiscal Year 2016)
Budget Amount *help
¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 2016: ¥1,100,000 (Direct Cost: ¥1,100,000)
Fiscal Year 2015: ¥1,200,000 (Direct Cost: ¥1,200,000)
KeywordsSRAM / variability / write stability / low voltage / write butterfly curve / reliability
Outline of Annual Research Achievements

We have gained further understanding of two write stability methods (write butterfly curve and write N-curve).

Firstly, the reason why write noise margin (WNM) in write N-curve deviates from a normal distribution at low VDD is clarified. Two modes are found in WNM's distribution. And the new mode is ascribed to cell transistor's sub-Vth operation.

Secondly, a new write stability method based on write butterfly curve is proposed. By extending the voltage sweeping range of two internal nodes in SRAM, the extended write butterfly curve can be obtained. It is found that the extended WNM (E-WNM) follows a normal distribution even at low VDD. In addition, good correlation between E-WNM and WNM of bit-line method is obtained. Thus, the proposed one is a good candidate for low-VDD yield estimation.

Research Progress Status

28年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

28年度が最終年度であるため、記入しない。

Report

(2 results)
  • 2016 Annual Research Report
  • 2015 Annual Research Report
  • Research Products

    (6 results)

All 2016 2015

All Journal Article (2 results) (of which Peer Reviewed: 2 results,  Acknowledgement Compliant: 2 results) Presentation (4 results) (of which Int'l Joint Research: 2 results)

  • [Journal Article] Statistical Write Stability Characterization in SRAM Cells at Low Supply Voltage2016

    • Author(s)
      Hao Qiu, Tomoko Mizutani, Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 63 Issue: 11 Pages: 4302-4308

    • DOI

      10.1109/ted.2016.2612678

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Comparison and statistical analysis of four write stability metrics in bulk CMOS static random access memory cells2015

    • Author(s)
      Hao Qiu, Tomoko Mizutani, Takuya Saraya, Toshiro Hiramoto
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 54 Issue: 4S Pages: 04DC09-04DC09

    • DOI

      10.7567/jjap.54.04dc09

    • NAID

      210000144966

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Presentation] A New Write Stability Metric for Yield Estimation in SRAM Cells at Low Supply Voltage2016

    • Author(s)
      Hao Qiu, Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto
    • Organizer
      JSAP Autumn Meeting
    • Place of Presentation
      TOKI MESSE Niigata Convention Center, Niigata
    • Year and Date
      2016-09-13
    • Related Report
      2016 Annual Research Report
  • [Presentation] A New Write Stability Metric Using Extended Write Butterfly Curve for Yield Estimation in SRAM Cells at Low Supply Voltage2016

    • Author(s)
      Hao Qiu, Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto
    • Organizer
      IEEE International Conference on Microelectronic Test Structures (ICMTS)
    • Place of Presentation
      Mielparque Yokohama, Yokohama
    • Year and Date
      2016-03-28
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Impact of Random Telegraph Noise (RTN) on Write Stability in Silicon-on-thin-BOX (SOTB) SRAM Cells in Sub-0.4V Regime2015

    • Author(s)
      Hao Qiu, Tomoko Mizutani, Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto
    • Organizer
      JSAP Autumn Meeting
    • Place of Presentation
      Nagoya Congress Center, Nagoya
    • Year and Date
      2015-09-13
    • Related Report
      2015 Annual Research Report
  • [Presentation] Impact of Random Telegraph Noise on Write Stability in Silicon-on-Thin-BOX (SOTB) SRAM Cells at Low Supply Voltage in Sub-0.4V Regime2015

    • Author(s)
      Hao Qiu, Tomoko Mizutani, Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto
    • Organizer
      IEEE Symposium on VLSI Technology
    • Place of Presentation
      Rihga Royal Hotel Kyoto, Kyoto
    • Year and Date
      2015-06-16
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research

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Published: 2015-11-26   Modified: 2024-03-26  

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