| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Outline of Final Research Achievements |
In this project, we studied self-oscillation phenomena of layered devices with vanadium dioxide (VO2) films which show insulator-metal transition (IMT). We fabricated VO2 films on (111)-oriented TiN metallic layers on Ti/Si substrates at low temperatures. By using the VO2/TiN/Ti/Si layered structure, we demonstarated low voltage threshold switching at 1.6 V with negative resistance region which is necessary for self-oscillation. By adjusting contact probes pressure on VO2 and TiN, we realized self-oscillation with controlled values of frequency. We realized oscillation with the world highest value of 15 MHz under probes pressure of 60 MPa. The obtained results are considered to be important for realizing stable oscillation devices without strcture changes.
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