Elucidation of void structure near the interface of a-Si:H/c-Si heterojunctions

• Project/Area Number: 15K04663
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: Kanagawa University
• Principal Investigator: Matsuki Nobuyuki 神奈川大学, 工学部, 准教授 (30373450)
• Co-Investigator(Kenkyū-buntansha): 大島 永康 国立研究開発法人産業技術総合研究所, 計量標準総合センター, 研究グループ長 (00391889) ; 上殿 明良 筑波大学, 数理物質系, 教授 (20213374) ; ORourke Brian 国立研究開発法人産業技術総合研究所, 計量標準総合センター, 主任研究員 (60586551)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Project Status: Completed (Fiscal Year 2017)
• Budget Amount: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000); Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000); Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
• Keywords: a-Si:H/c-Siヘテロ接合太陽電池 / 水素化アモルファスシリコン / ボイド / 新規評価手法 / 陽電子消滅 / a-Si:H/c-Siヘテロ接合 / 分光エリプソメトリー / Siヘテロ接合太陽電池 / 結晶シリコン / ヘテロ接合太陽電池 / 界面微視的構造 / 分光偏光解析 / 新評価手法確立

Outline of Final Research Achievements

Currently, hydrogenated amorphous silicon/crystalline silicon heterojunction solar cells are attracting attention as one of highly efficient solar cells. One of the most important characteristics determining the performance of the solar cell is the electronic and structural property at the interface between hydrogenated amorphous silicon (a-Si:H) and crystalline silicon (c-Si). In this research, we have established a novel method to determine the size of voids in the nm-thick a-Si:H layer by combining positron annihilation spectroscopy and spectroscopic ellipsometry.

Research Products

• [Presentation] a-Si:H/c-Siヘテロ界面近傍ボイド構造の高速評価 －ボイドサイズと光学パラメータの相関普遍性に関する考察－ (2018)
  • Author(s): 松木 伸行、松井 卓矢、満汐 孝治、オローク ブライアン、大島 永康、上殿 明良
  • Organizer: 第65回応用物理学会秋季学術講演会
• [Presentation] Fast optical determination of microvoid size in hydrogenated amorpshous silicon layers based on data obtained from positron annihilation spectroscopy (2017)
  • Author(s): N. Matsuki, N. Oshima, B. O’Rourke, A. Uedono
  • Organizer: 27th International Photovoltaic Science and Engineering Conference
  • Int'l Joint Research
• [Presentation] a-Si:H/c-Siヘテロ界面近傍ボイド構造の高速評価 －ボイドサイズ・水素結合・Si結合角ゆらぎの相互相関－ (2017)
  • Author(s): 松木 伸行、オローク ブライアン、大島 永康、上殿 明良
  • Organizer: 第78回応用物理学会秋季学術講演会
• [Presentation] a-Si:H/c-Siヘテロ界面構造評価：陽電子消滅データに基づく分光エリプソメトリー解析の適用 (2015)
  • Author(s): 松木伸行
  • Organizer: 第61回 CVD研究会
  • Place of Presentation: ユースパルいしかわ、金沢市、石川県
  • Year and Date: 2015-08-28
• [Presentation] Characterization of microvoid structure in a-Si:H/c-Si heterojunctions via positron annihilation and spectroscopic ellipsometry (2015)
  • Author(s): N. Matsuki
  • Organizer: The 5th Asia-Africa Sustainable Energy Forum Jointly with 7th International Workshop on Sahara Solar Breeder
  • Place of Presentation: University of Tsukuba, Tsukuba, Japan
  • Year and Date: 2015-05-12
  • Int'l Joint Research