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Carrier doping in ScN films with high electron mobility

Research Project

Project/Area Number 15K04684
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionNational Institute for Materials Science

Principal Investigator

Ohgaki Takeshi  国立研究開発法人物質・材料研究機構, 機能性材料研究拠点 電気・電子機能分野 電子セラミックスグループ, 主任研究員 (80408731)

Project Period (FY) 2015-10-21 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Keywords窒化スカンジウム / 薄膜 / 分子線エピタキシー / 電気特性 / 結晶構造
Outline of Final Research Achievements

Carrier doping in ScN films with high electron mobility was investigated.
ScN films and Mg-doped ScN films were grown on MgO and sapphire substrates by a MBE method, and their crystallinity and electric properties were examined. Single crystalline films with high crystallinity were successfully obtained on sapphire substrates. All the obtained films were degenerate n-type semiconductor, which was likely owing to nonstoichiometry.
The MBE grown ScN films were annealed with nitrogen radical irradiation. Their carrier concentration decreased with increasing the electron mobility. Nitrogen radical irradiation is probably a promising way to obtain carrier-controlled ScN films.

Report

(4 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Research-status Report
  • 2015 Research-status Report
  • Research Products

    (7 results)

All 2018 2017 2016

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Presentation (6 results) (of which Int'l Joint Research: 3 results)

  • [Journal Article] Heteroepitaxial growth and electric properties of (110)-oriented scandium nitride films2017

    • Author(s)
      Ohgaki Takeshi、Sakaguchi Isao、Ohashi Naoki、Haneda Hajime
    • Journal Title

      JOURNAL OF CRYSTAL GROWTH

      Volume: 476 Pages: 12-16

    • DOI

      10.1016/j.jcrysgro.2017.08.002

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Presentation] サファイアr面上に成長したScN薄膜の構造と電子移動度2018

    • Author(s)
      大垣 武、坂口 勲、大橋 直樹、羽田 肇
    • Organizer
      第65回応用物理学会 春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] サファイアr面基板上へのScN薄膜のヘテロエピタキシャル成長2017

    • Author(s)
      大垣武、坂口勲、大橋直樹、羽田肇
    • Organizer
      第64回応用物理学会春季学術講演会
    • Place of Presentation
      パシフィコ横浜 (神奈川県・横浜市)
    • Year and Date
      2017-03-14
    • Related Report
      2016 Research-status Report
  • [Presentation] Heteroepitaxial growth and electric properties of (110)-oriented scandium nitride films2017

    • Author(s)
      Ohgaki Takeshi、Sakaguchi Isao、Ohashi Naoki、Haneda Hajime
    • Organizer
      STAC-10
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Molecular beam epitaxy growth of (100)-oriented ScN films2017

    • Author(s)
      Ohgaki Takeshi、Sakaguchi Isao、Ohashi Naoki、Haneda Hajime
    • Organizer
      2017 E-MRS Fall Meeting
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] MBE Growth of Scandium Nitride Films on M-face Sapphire Substrates2016

    • Author(s)
      Takeshi Ohgaki, Isao Sakaguchi, Naoki Ohashi, Hajime Haneda
    • Organizer
      The 10th Asian Meeting on Electroceramics
    • Place of Presentation
      Taipei (Taiwan)
    • Year and Date
      2016-12-04
    • Related Report
      2016 Research-status Report
    • Int'l Joint Research
  • [Presentation] (100)配向ScN薄膜の光・電気特性2016

    • Author(s)
      大垣武、坂口勲、 大橋直樹、羽田肇
    • Organizer
      第63回応用物理学会春季学術講演会
    • Place of Presentation
      東京工業大学大岡山キャンパス (東京都目黒区)
    • Year and Date
      2016-03-19
    • Related Report
      2015 Research-status Report

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Published: 2015-10-21   Modified: 2019-03-29  

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