| Budget Amount *help |
¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2017: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2016: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Outline of Final Research Achievements |
In order to improve the operating yield of LSIs under the situation of increasing fluctuation of transistor characteristics, we proposed the following two methods; first, an on-chip measuring method of the threshold voltage (Vth) and the gate-oxide thickness (Tox) from the frequencies of ring oscillators using only digital processing, second, an adaptively optimizing method of the supply voltage according to the measured Vth and Tox. We applied the proposed methods to an ordinary LSI including the SRAM and confirmed the effect of them by the simulation. The simulation results shows that the LSI is secured by the optimization of the supply voltage. The results of this study is promising because they realizes the improvement of LSI yield with a low cost, since all the processes from the measurement of the Vth and Tox to the adaptive optimization of the supply voltage are carried out by an on-chip processing.
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