Epitaxial growth of thee-dimensional periodic structure consisting of single crystal (Fostering Joint International Research)

Research Project

Project/Area Number	15KK0205
Research Category	Fund for the Promotion of Joint International Research (Fostering Joint International Research)
Allocation Type	Multi-year Fund
Research Field	Inorganic materials/Physical properties
Research Institution	Kyoto University
Principal Investigator	Miyake Masao 京都大学, エネルギー科学研究科, 准教授 (60361648)
Research Collaborator	Braun Paul V. イリノイ大学, アーバナ-シャンペーン校・Materials Science and Engineering, 教授
Project Period (FY)	2016 – 2017
Project Status	Completed (Fiscal Year 2017)
Budget Amount *help	¥10,530,000 (Direct Cost: ¥8,100,000、Indirect Cost: ¥2,430,000)
Keywords	エピタキシャル成長 / フォトニック結晶 / ナノポーラス / 多孔質 / ナノ構造 / 水熱合成 / 結晶成長 / エピタキシャル / 材料加工・処理
Outline of Final Research Achievements	Researches on attempting to acquire various novel functionality such as enhanced reactivity by forming a nanoporous structure of semiconductor materials have been conducted. However, most of the conventional methods for the preparation of porous materials can only produce materials composed of polycrystalline or amorphous materials. Because the defect density of such materials is high, optical an electrical properties are not good enough to realize a device with high performance. In this study, we developed a technique to fabricate three dimensional nanoporous material consisting of a single crystal semiconductor.