Research on Radiation-Hardened CMOS Integrated Circuits using Wide Bandgap SiC Semiconductor(Fostering Joint International Research)
| Project/Area Number |
15KK0240
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| Research Category |
Fund for the Promotion of Joint International Research (Fostering Joint International Research)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Hiroshima University |
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Principal Investigator |
Kuroki Shin-Ichiro 広島大学, ナノデバイス・バイオ融合科学研究所, 准教授 (70400281)
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| Research Collaborator |
Zetterling Carl-Mikael KTH Royal Institute of Technology, School of Information and Communication Technology, Prof.
Östling Mikael スウェーデン王立工科大学, School of Information and Communication Technology, Prof.
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| Project Period (FY) |
2016 – 2017
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥14,170,000 (Direct Cost: ¥10,900,000、Indirect Cost: ¥3,270,000)
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| Keywords | 極限環境エレクトロニクス / シリコンカーバイド / CMOS集積回路 / MOSFETs / 耐放射線 / 高温動作 / 廃炉技術 / 耐高温動作 / MOSFET / 耐放射線デバイス / 耐高温デバイス |
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| Outline of Final Research Achievements |
For the decommissioning of the Fukushima Daiichi Nuclear Power Plant in Japan, installation of robots has been promoted. However the electronics are mainly consist of conventional silicon integrated circuits, which is vulnerable to radiation. And then the electronics limits the operation time for the decommissioning. For the radiation hardened electronics, we need to apply other semiconductor with radiation hardness. 4H-SiC semiconductor is one of the candidates for such a material. In this research project, we promoted research and developments on 4H-SiC MOSFET devices and integrated circuits, research for high performance, and for harsh environment applications, under the international collaboration.
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Report
(3 results)
Research Products
(29 results)
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[Journal Article] 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics2017
Author(s)
S-I. Kuroki, T. Kurose, H. Nagatsuma, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
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Journal Title
Mat. Sci. Forum
Volume: 897
Pages: 669-672
Related Report
Peer Reviewed / Int'l Joint Research
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[Presentation] Research on 4H-SiC pMOSFETs with NbNi silicide2017
Author(s)
Jun Kajihara, Shin-Ichiro Kuroki, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki,Takamaro Kikkawa, Takahiro Makino, Takeshi Oshima, M. Ostling, and C.-M. Zetterling
Organizer
The 64th JSAP Spring Meeting
Place of Presentation
パシフィコ横浜
Year and Date
2017-03-14
Related Report
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[Presentation] 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics2016
Author(s)
S.-I. Kuroki, H. Nagatsuma, T. Kurose, S. Ishikawa, T. Maeda, H. Sezaki, T. Kikkawa, T. Makino, T. Ohshima, M. Ostling, and C.-M. Zetterling
Organizer
11th European Conference on Silicon Carbide and Related Materials (ECSCRM2016)
Place of Presentation
Halkidiki, Greece
Year and Date
2016-09-26
Related Report
Int'l Joint Research
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[Presentation] 4H-SiC MOSFETs and Logic Inverters for Radiation-Hardened Electronics2016
Author(s)
Shin-Ichiro Kuroki, Hirofumi Nagatsuma, Tatsuya Kurose, Milantha De Silva, Seiji Ishikawa, Tomonori Maeda, Hiroshi Sezaki, Takamaro Kikkawa, Takahiro Makino, Takashi Ohshima, Mikael Ostling, and Carl-Mikael Zetterling
Organizer
International Workshop on Radiation Resistant Sensors and Related Technologies for Nuclear Power Plant Decommissioning (R2SRT2016)(廃炉に向けた耐放射線性センサー及び関連研究に関する国際ワークショップ)
Place of Presentation
福島県いわき市
Year and Date
2016-04-19
Related Report
Int'l Joint Research / Invited
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