| Project/Area Number |
16360013
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Waseda University |
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Principal Investigator |
KOBAYASHI Masakazu Waseda University, Faculty of Science and Engineering, Professor (10241936)
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| Co-Investigator(Kenkyū-buntansha) |
HORIKOSHI Yoshiji Waseda University, Faculty of Science and Engineering, Professor (60287985)
UTAKA Katsuyuki Waseda University, Faculty of Science and Engineering, Professor (20277817)
SOUTA Takayuki Waseda University, Faculty of Science and Engineering, Professor (90171371)
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| Project Period (FY) |
2004 – 2007
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| Project Status |
Completed (Fiscal Year 2007)
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| Budget Amount *help |
¥13,340,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2007: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2006: ¥2,600,000 (Direct Cost: ¥2,600,000)
Fiscal Year 2005: ¥2,900,000 (Direct Cost: ¥2,900,000)
Fiscal Year 2004: ¥5,500,000 (Direct Cost: ¥5,500,000)
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| Keywords | Moleclaur Beam Epitaxy / Homo-Substrate / UV-sensor / TEM / Superlattice / PL / ZnTe / ZnCdMgS |
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| Research Abstract |
Active compensation of the substrate temperature during the MBE growth of wide bandgap II-VI alloy materials were further applied for various complicated structures, namely superlattices, and delta-doping structures.
Different from conventional III-V compound semiconductors such as GaAs, the materials property is significantly affected by the substrate temperature. II-VI wide bandgap compounds were usually grown under lower temperatures than Ga As and related materials, perturbation of the substrate temperature during the growth would cause the deterioration of the film quality of the epitaxial layer. In this research project, heater was introduced to the MBE chamber at the location of source material cells. The substrate temperature perturbation would take place when the cell shutter was opened so that the molecular beam would be introduced toward the substrate since the heat irradiation from the hot cell would take place. The additional heater was to cancel the heat irradiation from the source material cell when those shutters were closed.
High quality ternary compound of ZnMgCdS layers were previously grown using this active compensation technique. This technique was also applied for the growth of superlattice structures, namely ZnMgS/ZnCdS, and ZnSe/MgCdS. Uniform layers structure was confirmed by TEM measurement and narrower X-ray diffraction FWHM were obtained by introducing the active compensation technique. This technique was further introduced for the growth of ZnTe homoepitaxial layer where complicated shutter sequence was introduced to form the delta co-doping structure. The PL properties were improved by using this active compensation technique.
This active compensation of the substrate is a powerful tool to obtain the high quality II-VI epitaxial layers by MBE.
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