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Synthesis of High Performance Thin Film Magnet on Semiconductor Substrate for the Micromagnetic Devices

Research Project

Project/Area Number 16510098
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Microdevices/Nanodevices
Research InstitutionNagoya Institute of Technology

Principal Investigator

ADACHI Nobuyasu  Nagoya Institute of Technology, Associate Professor, 大学院・工学研究科, 助教授 (90262956)

Co-Investigator(Kenkyū-buntansha) OSATO Hitoshi  Nagoya Institute of Technology, Professor, 大学院・工学研究科, 教授 (20024333)
GOMI Manabu  Nagoya Institute of Technology, Professor, 大学院・工学研究科, 教授 (80126276)
Project Period (FY) 2004 – 2005
Project Status Completed (Fiscal Year 2005)
Budget Amount *help
¥3,900,000 (Direct Cost: ¥3,900,000)
Fiscal Year 2005: ¥600,000 (Direct Cost: ¥600,000)
Fiscal Year 2004: ¥3,300,000 (Direct Cost: ¥3,300,000)
Keywordsrare earth thin film magnet / high coercivity / MEMS / RF sputtering / post-annealing / Si substrate / single magnetic domain / c-axis preferential orientation / 結晶配向 / 薄膜磁石 / 希土類 / マイクロマシン / 熱処理結晶化 / シリコン / 保持力 / ハード磁性
Research Abstract

We successfully synthesized thin films of Nd-Fe-B rare earth magnets with coercive force of about 15 kOe on Si(111) single crystal substrate by RF sputtering and post annealing technique. Preparation of thin film magnet on semiconductor substrate has great advantage for the practical application of MEMS devices. We inserted the buffer layer of MoSi_2 between the substrate and Nd-Fe-B layer with approximately 2 micron thickness. We consider that the buffer layer has a roll to depress the thermal strain. The Ti top layer was coated for the protect from oxidation of the Nd-Fe-B layer. The as-deposited films shows the amorphous phase. After annealing at 650 degreeC by infrared radiation in vacuum atmosphere, the Nd_2Fe_14B phase was well crystallized in the film. The XRD pattern showed (00l) diffraction and the strong (410) peak was also observed. The magnetic hysteresis showed the isotropic in the magnetic field parallel and perpendicular to the film plane. This result come from the random orientation of c-axis. The XRD analysis is agreement with the insufficient c-axis orientations. However, the coercive force of the film shoed the large value of aboout 15 kOe. The SEM and MFM observation of the film suggested the single magnetic domain structure with 200-350 nm diameter was realized. Although the realization of the c-axis preferential orientation of the film remains a subject matter to overcome, the high coercivity of the film is good property for the concrete application of the micromotor or microactuator in the MEMS devices.

Report

(3 results)
  • 2005 Annual Research Report   Final Research Report Summary
  • 2004 Annual Research Report
  • Research Products

    (4 results)

All 2006 2005

All Journal Article (2 results) Patent(Industrial Property Rights) (2 results)

  • [Journal Article] Magnetic domain structure of NdFeB thin film on Si substrate2006

    • Author(s)
      N.Adachi, Y.Yoshimura, T.Ota, I.Sakamoto, T.Okuda
    • Journal Title

      Proceeding 2006 IMAPS/AcerS 2^nd International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems technologies Vol.2

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Journal Article] Magnetic domain structure of NdFeB thin film on Si substrate2006

    • Author(s)
      N.Adachi, Y.Isa, T.Yoshimura, T.Ota, I.Sakamoto, T.Okuda
    • Journal Title

      Proceeding 2006 IMAPS/AcerS 2^<nd> International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems technologies Vol.2, WP46

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Patent(Industrial Property Rights)] 特許願2005

    • Inventor(s)
      安達 信泰
    • Industrial Property Rights Holder
      名古屋工業大学
    • Industrial Property Number
      2005-254773
    • Filing Date
      2005-09-20
    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2005 Final Research Report Summary
  • [Patent(Industrial Property Rights)] 希土類薄膜磁石の製造方法2005

    • Inventor(s)
      安達 信泰
    • Industrial Property Rights Holder
      名古屋工業大学
    • Filing Date
      2005-09-20
    • Related Report
      2005 Annual Research Report

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Published: 2004-04-01   Modified: 2016-04-21  

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