| Project/Area Number |
16560028
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | National Institute of Advanced Industrial Science and Technology |
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Principal Investigator |
IKEGAMI Keiichi National Institute of Advanced Industrial Science and Technology, Nanotechnology Research Institute, Senior Research Scientist, ナノテクノロジー研究部門, 主任研究員 (50356416)
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| Co-Investigator(Kenkyū-buntansha) |
OHNUKI Hitoshi Tokyo University of Marine Science and Technology, Faculty of Marine Technology, Research Assistant, 海洋工学部, 助手 (60223898)
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| Project Period (FY) |
2004 – 2005
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| Project Status |
Completed (Fiscal Year 2005)
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| Budget Amount *help |
¥2,800,000 (Direct Cost: ¥2,800,000)
Fiscal Year 2005: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2004: ¥2,100,000 (Direct Cost: ¥2,100,000)
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| Keywords | Organic FET / Field-induced carrier doping / Physical doping / Vibrational spectroscopy / Reflection absorption spectroscopy / Langmuir-Blodgett films / TCNQ / BO |
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| Research Abstract |
In order to provide a basis for understanding the field-induced carrier doping (FICD) phenomenon in ultrathin organic semiconductor layers, firstly, we have adopted a theoretical approach. In this approach, a metal/insulator/semiconductor/metal four-layer model has been considered. Introduction of several physical approximations has simplified the model and allowed us to solve analytically the simultaneous derivative equation describing the model according to the Fermi distribution and the Gauss law. The behavior of the obtained solution has been examined by setting the parameters to the cases in which the insulator and semiconductor layers are made by Langmuir-Blodgett (LB) technique. This approach has shown the next two points : i) Though the FICD phenomenon becomes nonlinear, the thickness of the accumulation layer is kept much smaller than the thickness of the semiconductor layer (ds) even when both of ds and the density of states in that layer are very small ; ii) In the other cas
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es the FICD phenomenon is essentially the same as that in the inorganic devices.
As an experimental approach, we have planned to apply modified infrared reflection-absorption spectroscopy (IR-RAS) techniques to metal/insulator/semiconductor/metal four-layer devices made of LB films. Two types of the modified IR-RAS technique have been prepared. The low-frequency type switches on and off the U.C. bias voltage applied to the device after each Fourier-transform (FT) scan completes so that the spectrometer records the difference between the RAS signals with and without the bias voltage. The high-frequency type applies A.C. (1-100 kHz) bias voltage to the device and inserts a phase-sensitive detector between the IR detector-signal preamplifier and the analogue-to-digital converter so that the spectrometer records the difference between the RAS signals with and without the bias voltage, too.
The low-frequency type has been applied to four-layer devices with LB films of alkylTCNQ (as the semiconductor layer), LB films of fatty acid (as the insulator layer), LB films of the BO-fatty acid mixture (as one of the metal layer), and evaporated gold film (as the other metal layer) and changes in the RAS signal induced by the bias voltage have been detected. Unfortunately, however, the observed changes are not fully reversible and then we have concluded that some electrochemical effect occurs. At present, we are trying to eliminate the electrochemical effect and to observe the pure FICD effect by optimizing the sample structure, the magnitude and the frequency of the bias voltage, etc. Less
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