Effect of deposition rate on ZnO films made by an atmospheric pressure cold plasma generator

• Project/Area Number: 16560285
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Takamatu national college of technology
• Principal Investigator: SHIKAMA Tomokazu Takamatu national college of technology, Department of Electrical and computer engineering, Professor, 電気情報工学科, 教授 (70206069)
• Co-Investigator(Kenkyū-buntansha): SUZAKI Yoshifumi Kagawa university, Faculty of engineering, Associate professor, 工学部, 助教授 (60206456) ; KOINUMA Hideomi National Institute for Materials Science, Vice president, 理事 (70011187)
• Project Period (FY): 2004 – 2005
• Project Status: Completed (Fiscal Year 2005)
• Budget Amount: ¥3,000,000 (Direct Cost: ¥3,000,000); Fiscal Year 2005: ¥800,000 (Direct Cost: ¥800,000); Fiscal Year 2004: ¥2,200,000 (Direct Cost: ¥2,200,000)
• Keywords: atmospheric pressure cold plasma / zinc oxide / grain size

Research Abstract

We have shown that the zinc oxide thin film of the high quality can be made by using the atmospheric pressure low temperature plasma to which the thin film preparation can be done by open air. To speed up the film deposition speed, the optimization of the slit configuration was examined.
The deposition region has increased when the number of slits (1mm×20mm) is increased from one to two. However, the gas flow becomes unstable, and the uniformity of the film has worsened. Moreover, the deposition speed that the grain size of the zinc oxide thin film becomes 40nm or more has increased by a factor of about 1.3.
Next, to expand the film deposition region with the uniformity of the film had been kept, the slit of the taper was examined. The thin film was made by using the slit of the taper of 1.6mm in width on the gas exit side. In this case, the width of deposition region of the thin film has extended only to about 1.1 times compared with the slit of the width of 1mm. Moreover, the depositio n speed that the grain size of the zinc oxide thin film becomes 40nm or more has hardly changed.
In addition, film production was done by using the slit of the taper that expanded the slit width on the gas exit side up to 3mm. In this case, the width of deposition region of the thin film has increased by a factor of 1.9. In addition, the grain size of the zinc oxide thin film was about 40nm in the range at the made film, deposition rate in any film. The film deposition rate at which the grain size of 40nm was kept became twice or more compared with the slit of the width of 1mm. However, the crystal that was orientated to (101) in addition to the crystal that was orientated to (002) in the made film when the slit width on the gas exit side was widened.
Therefore, the slit made a taper has understood it is a effective configuration in the speed-up of film production. Moreover, when the film with good orientation property is needed, it is necessary to examine the film condition etc. further.