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Study on lateral breakdown field in GaN-based transistors

Research Project

Project/Area Number 16H04347
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionUniversity of Fukui

Principal Investigator

Kuzuhara Masaaki  福井大学, 学術研究院工学系部門, 教授 (20377469)

Co-Investigator(Kenkyū-buntansha) 只友 一行  山口大学, 大学院創成科学研究科, 教授 (10379927)
ASUBAR JOEL  福井大学, テニュアトラック推進本部, 講師 (10574220)
山本 あき勇  福井大学, 学術研究院工学系部門, 特命教授 (90210517)
Project Period (FY) 2016-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
Fiscal Year 2018: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2017: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2016: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
Keywords窒化物半導体 / HEMT / 絶縁破壊 / 耐圧 / リーク電流 / 半絶縁性基板 / バッファ層 / 抵抗率 / GaN / 半絶縁性 / 破壊電界 / 漏れ電流 / パワーデバイス / 基板 / 高電子移動度トランジスタ / 電子デバイス・機器 / トランジスタ
Outline of Final Research Achievements

It was recognized that the reported values of the effective breakdown field, defined as the breakdown voltage divided by the effective drift region length of High-Electron-Mobility Transistors (HEMTs), were at best 1 MV/cm, which was far below the theoretically predicted value of 3.3 MV/cm. In this study, we have fabricated AlGaN/GaN HEMTs on a free-standing semi-insulating GaN substrate with different Fe doping concentrations and investigated the physical origin restricting the measured maximum value of the effective breakdown field in HEMTs. As a result, we were able to suppress the unwanted leakage current under reverse-biased conditions by optimizing the isolation mesa-etching depth and by improving the insulating properties both in the GaN buffer and in the GaN substrate. Finally we demonstrated a valid method to achieve more than 2 MV/cm effective breakdown field in HEMTs same as that for the semi-insulating GaN substrate.

Academic Significance and Societal Importance of the Research Achievements

大きなバンドギャップをもつ半導体が将来のパワーデバイス材料として期待されており、シリコンカーバイド(SiC)、窒化ガリウム(GaN)などの材料が研究されている。パワーデバイス応用では、半導体の単位長さ当たりに印加可能な最大電圧である絶縁破壊電界が重要なパラメータであるが、GaNに関する限り、その報告例は少ない。特に横型HEMTに関して実験的に求められた実効破壊電界は、その理論予測値(3.3 MV/cm)に比べて1/3以下と小さいことが問題であった。本研究はこの原因の物理理解に学術的に取り組んだものであり、その成果は今後の社会実装におけるデバイス設計指針として役立つものである。

Report

(4 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Annual Research Report
  • 2016 Annual Research Report
  • Research Products

    (26 results)

All 2019 2018 2017 2016 Other

All Journal Article (6 results) (of which Int'l Joint Research: 1 results,  Peer Reviewed: 6 results) Presentation (19 results) (of which Int'l Joint Research: 17 results,  Invited: 8 results) Remarks (1 results)

  • [Journal Article] Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors2018

    • Author(s)
      Taisei Yamazaki, Joel T. Asubar, Hirokuni Tokuda, and Masaaki Kuzuhara
    • Journal Title

      Applied Physics Express

      Volume: 11 Issue: 5 Pages: 0541021-0541025

    • DOI

      10.7567/apex.11.054102

    • NAID

      210000136205

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electron concentration in highly resistive GaN substrates co-doped with Si, C, and Fe2018

    • Author(s)
      H. Tokuda, K. Suzuki, J. T. Asubar, and M. Kuzuhara
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 7 Pages: 071001-071001

    • DOI

      10.7567/jjap.57.071001

    • NAID

      210000149247

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Correlation of AlGaN/GaN HEMTs electroluminescence characteristics with current collapse2018

    • Author(s)
      S. Ohi, T. Yamazaki, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Journal Title

      Appl. Phys. Express

      Volume: 11 Issue: 2 Pages: 024101-024101

    • DOI

      10.7567/apex.11.024101

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] AlGaN/GaN heterostructures with an AlGaN layer grown directly on reactive-ion-etched GaN showing a high electron mobility (>1300 cm2/Vs)2018

    • Author(s)
      A. Yamamoto, S. Makino, K. Kanatani, and M. Kuzuhara
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 57 Issue: 4 Pages: 045502-045502

    • DOI

      10.7567/jjap.57.045502

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Analytical derivation of interface state density from sub-threshold swing in AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors2017

    • Author(s)
      H. Tokuda, J. T. Asubar, and M. Kuzuhara
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 56 Issue: 10 Pages: 104101-104101

    • DOI

      10.7567/jjap.56.104101

    • NAID

      210000148328

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] AlGaN/GaN high-electron-mobility transistor technology for high-voltage and low-on-resistance operation2016

    • Author(s)
      M. Kuzuhara, J. T. Asubar, and H. Tokuda
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 55 Issue: 7 Pages: 0701011-12

    • DOI

      10.7567/jjap.55.070101

    • NAID

      210000146739

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Presentation] GaN HEMTの特徴、開発経緯と将来展望2019

    • Author(s)
      葛原正明
    • Organizer
      学振ワイドバンドギャップ半導体光・電子デバイス第162委員会研究会、上智大
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] GaN-based HEMTs for high-voltage operation2018

    • Author(s)
      M. Kuzuhara
    • Organizer
      Int’l. Conf. on Materials and Systems for Sustainability (ICMaSS), 01-Nitride-1, Nagoya
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates2018

    • Author(s)
      K. Suzuki, A. Aoai, J. T. Asubar, H. Tokuda, K. Nojima, N. Ishibashi, N. Okada, K. Tadatomo, and M. Kuzuhara
    • Organizer
      WOCSDICE 2018, Bucharest, Romania
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Characterization of resistivity and breakdown field in Fe-doped semi-insulating GaN substrates2018

    • Author(s)
      A. Aoai, K. Suzuki, J. T. Asubar, H. Tokuda, M. Kuzuhara, K. Nojima, N. Ishibashi, N. Okada, and K. Tadatomo
    • Organizer
      IMFEDK 2018, Kyoto
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Study on breakdown field in Fe-doped semi-insulating GaN substrates2018

    • Author(s)
      A. Aoai, K. Suzuki, J. T. Asubar, H. Tokuda, N. Okada, K. Tadatomo, and M. Kuzuhara
    • Organizer
      IWN-2018, ThP-ED-2
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Fe添加した半絶縁性GaN基板の絶縁破壊電界評価2018

    • Author(s)
      青合充樹、鈴木孝介、J.T.Asubar、徳田博邦、岡田成仁、只友一行、葛原正明
    • Organizer
      第79回応用物理学会秋季講演会、21a-331-1、 名古屋
    • Related Report
      2018 Annual Research Report
  • [Presentation] High Breakdown Voltage AlGaN/GaN HEMTs Fabricated on Semi-ins2017

    • Author(s)
      M. Kuzuhara, J. T. Asubar, and H. Tokuda
    • Organizer
      Workshop on Frontier Photonic and Electronic Materials and Devices
    • Place of Presentation
      Mallorca, Spain
    • Year and Date
      2017-03-05
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Reduced current collpase in AlGaN/GaN HEMTs for low-loss power switching operation2017

    • Author(s)
      Masaaki Kuuzhara
    • Organizer
      3rd Intensive Discussion on Growth of Nitride Semiconductors (IDGN-3)
    • Place of Presentation
      Sendai, Japan
    • Year and Date
      2017-01-16
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Effect of reverse bias annealing on the properties of AlGaN/GaN MIS-HEMTs with recessed-gate structure2017

    • Author(s)
      S. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      IMFEDK2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Reduced current collapse in multi-fingered AlGaN/GaN MOS-HEMTs with dual field plate2017

    • Author(s)
      R. Yamaguchi, Y. Suzuki, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      IMFEDK2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Characterization of AlGaN/GaN HEMTs with directly regrown AlGaN barrier layer2017

    • Author(s)
      K. Kanatani, S. Yoshida, A. Yamamoto, and M. Kuzuhara
    • Organizer
      IMFEDK2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Enhancement mode AlGaN/GaN MISHEMTs with recessed-gate structures exhibiting high threshold voltage2017

    • Author(s)
      W. Gamachi, K. Ishii, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      EM-NANO2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Effect of substrate thermal resistivity on breakdown voltage of AlGaN/GaN HEMTs2017

    • Author(s)
      T. Yamazaki, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      EM-NANO2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Investigation of dynamic on-resistance of multi-mesa-channel AlGaN/GaN HEMTs2017

    • Author(s)
      J. T. Asubar, H. Tokuda, T. Hashizume, and M. Kuzuhara
    • Organizer
      EM-NANO2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] GaN HEMTs on highly-resistive GaN substrates2017

    • Author(s)
      M. Kuzuhara, J. -H. Ng., T. Yamazaki, J. T. Asubar, and H. Tokuda
    • Organizer
      TWHM2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Advanced breakdown characteristics of AlGaN/GaN HEMTs fabricated on free-standing GaN substrates2017

    • Author(s)
      M. Kuzuhara
    • Organizer
      8th Asia-Pacific Workshop on Widegap Semiconductors (APWS)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] GaN-based HEMTs for high-voltage operation2017

    • Author(s)
      M. Kuzuhara
    • Organizer
      Int’l. Conf. on Materials and Systems for Sustainability (ICMaSS)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Effect of Passivation on breakdown voltage and dynamic on-resistance in AlGaN/GaN HEMTs2016

    • Author(s)
      M. Kuzuhara, J. T. Asubar, and H. Tokuda
    • Organizer
      E-MRS, Fall Meeting
    • Place of Presentation
      Warsaw, Poland
    • Year and Date
      2016-09-19
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] AlGaN/GaN HEMTs on Free-standing GaN substrate with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm2016

    • Author(s)
      J. H. Ng, J. T. Asubar, H. Tokuda, and M. Kuzuhara
    • Organizer
      2016 International Conf. on Compound Semiconductor Manufacturing Technology
    • Place of Presentation
      Miami, FL, USA
    • Year and Date
      2016-05-16
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Remarks] 葛原研究室ホームページ

    • URL

      http://kuzuharalab.fuee.u-fukui.ac.jp/

    • Related Report
      2018 Annual Research Report

URL: 

Published: 2016-04-21   Modified: 2020-03-30  

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