High efficiency spin injection and low loss spin transport in diamond semiconductors
| Project/Area Number |
16H04348
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Nagoya University |
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Principal Investigator |
Ueda Kenji 名古屋大学, 工学研究科, 准教授 (10393737)
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| Project Period (FY) |
2016-04-01 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2018)
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| Budget Amount *help |
¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000)
Fiscal Year 2018: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2016: ¥14,560,000 (Direct Cost: ¥11,200,000、Indirect Cost: ¥3,360,000)
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| Keywords | ダイヤモンド / 半導体 / スピン注入 / ダイヤモンド半導体 / スピントランジスタ / スピンデバイス / 強磁性体 / ハーフメタル / スピン輸送 / 電子デバイス・機器 / 電子・電気材料 / スピンエレクトロニクス |
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| Outline of Final Research Achievements |
In this study, we have tried highly efficient spin injection and low loss spin transport in diamond semiconductors. Spin injection efficiency into diamond became one order larger than that before by tuning surface-termination state of diamond and improving crystal quality of tunnel barriers in magnetic tunnel junctions on diamond. We have succeeded in fabricating epitaxial Mn2CoAl films, which are spin gapless semiconductors (SGS), at lower growth temperature and observed ambipolar characteristics, which is one of main characteristics of SGS. We have succeeded in fabricating graphene layers on diamond, that is important for efficient spin injection, and also found graphene/diamond junctions showed peculiar conductivity change by photo irradiation.
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| Academic Significance and Societal Importance of the Research Achievements |
スピン注入源となる磁性トンネル接合とダイヤモンド界面を、ダイヤモンドの表面終端を含めて精密に制御する事がダイヤモンドへの高効率スピン注入に必須となる事を見出した。また、ダイヤモンドとグラフェン積層・複合化し、炭素sp2/sp3界面を創製する事で新たな機能が発現する事が分かった。
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Report
(4 results)
Research Products
(35 results)
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[Journal Article] Magnetization reversal of the domain structure in the anti-perovskite nitride Co3FeN investigated by high-resolution X-ray microscopy2016
Author(s)
T. Hajiri, S. Finizio, M. Vafaee, Y. Kuroki, H. Ando, H. Sakakibara, A. Kleibert, L. Howald, F. Kronast, K. Ueda, H. Asano, and M. Klaui
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Journal Title
J. Appl. Phys. 119
Volume: 119
Issue: 18
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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