Silicene surrounded by oxide- Development using self-limitation of oxidation and oxidation-induced strain

• Project/Area Number: 16H05969
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Single-year Grants
• Research Field: Nanomaterials engineering
• Research Institution: Tohoku University
• Principal Investigator: Ogawa Shuichi 東北大学, 多元物質科学研究所, 助教 (00579203)
• Research Collaborator: Takakuwa Yuji
• Project Period (FY): 2016-04-01 – 2019-03-31
• Project Status: Completed (Fiscal Year 2018)
• Budget Amount: ¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000); Fiscal Year 2018: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000); Fiscal Year 2017: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000); Fiscal Year 2016: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
• Keywords: 熱酸化 / シリセン / 酸化誘起歪み / 点欠陥 / リアルタイム光電子分光 / 熱酸化プロセス / 酸化反応測度論 / 歪み誘起反応工学 / 半導体超微細化 / 電子・電気材料 / 酸化反応速度論 / 歪み計測 / 表面・界面物性 / 酸化反応自己停止 / シリコン熱酸化 / 歪み誘起反応制御

Outline of Final Research Achievements

In order to prepare silicene (a thin film of one atomic layer of silicon) with excellent electrical properties by oxidation of a silicon wafer, the mechanism of the oxidation self-termination which the progress of thermal oxidation stopped was investigated. As a result, it was found that the lattice strain included by oxidation was the cause. If there are no defects formed to relieve the strain, the oxidation reaction is limited, and it becomes possible to stop the reaction by leaving one atomic layer. However, it has also been found that oxidation does not self-limited in the presence of even a small amount of light.

Academic Significance and Societal Importance of the Research Achievements

本研究によりケイ素の酸化反応が自己停止する条件を明らかにすることができた。これにより、絶縁体かつ保護膜として機能するSiO2に囲まれたシリセンを作製できる可能性が高まった。酸化膜で囲まれたシリセンを酸化反応のみで作製できれば、現在の電子デバイスよりも低消費電力で高性能なものが作製可能である。しかしながら現状ではシリセンの電気特性など明らかになっていない点も多く残っているため、今後さらなる研究が必要とされる。

Research Products

• [Int'l Joint Research] フリッツハーバー研究所(ドイツ)
• [Int'l Joint Research] ケースウエスタンリザーブ大学(米国)
• [Journal Article] 光電子分光法によるSi表面酸化プロセス反応速度と 酸化誘起歪みの同時観察 (2019)
  • Author(s): 小川修一、吉越章隆、高桑雄二
  • Journal Title: 表面と真空 Volume: 62
  • NAID: 130007662229
  • Peer Reviewed / Open Access
• [Journal Article] Band alignment determination of bulk h-BN and graphene/h-BN laminates using photoelectron emission microscopy (2019)
  • Author(s): Ogawa Shuichi、Yamada Takatoshi、Kadowaki Ryo、Taniguchi Takashi、Abukawa Tadashi、Takakuwa Yuji
  • Journal Title: Journal of Applied Physics Volume: 125 Issue: 14 Pages: 144303-144303
  • DOI: 10.1063/1.5093430
  • Peer Reviewed / Open Access
• [Journal Article] Interfacial oxidation kinetics at SiO2/Si(001) mediated by the generation of point defects: Effect of raising O2 pressure (2018)
  • Author(s): Ogawa Shuichi、Takakuwa Yuji
  • Journal Title: AIP Advances Volume: 8 Issue: 7 Pages: 075119-075119
  • DOI: 10.1063/1.5034395
  • Peer Reviewed / Open Access
• [Journal Article] Polarity identification of ZnO(0001) surface by reflection high-energy electron diffraction (2018)
  • Author(s): Y. Horio, J. Yuhara, Y. Takakuwa, S. Ogawa, and K. Abe
  • Journal Title: Jpn. J. Appl. Phys. Volume: 57 Issue: 4 Pages: 045701-045701
  • DOI: 10.7567/jjap.57.045701
  • NAID: 210000148836
  • Peer Reviewed / Open Access
• [Journal Article] Enhancement of SiO2/Si(001) interfacial oxidation induced by thermal strain during rapid thermal oxidation (2016)
  • Author(s): S. Ogawa, J. Tang, A. Yoshigoe, S. Ishidzuka, Y. Takakuwa
  • Journal Title: The Journal of Chemical Physics Volume: 145 Issue: 11 Pages: 114701-114701
  • DOI: 10.1063/1.4962671
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Detection of molecular oxygen adsorbate during room-temperature oxidation of Si(100)2×1 surface: In situ synchrotron radiation photoemission study (2016)
  • Author(s): A. Yoshigoe, Y. Yamada, R. Taga, S. Ogawa, Y. Takakuwa
  • Journal Title: Japanese Journal of Applied Physics Volume: 55 Issue: 10 Pages: 100307-100307
  • DOI: 10.7567/jjap.55.100307
  • NAID: 210000147114
  • Peer Reviewed
• [Presentation] リアルタイムXPSによるSi表面酸化プロセスの反応速度・酸化誘起歪みの同時観察 (2018)
  • Author(s): 小川修一
  • Organizer: 2018年日本表面真空学会学術講演会
  • Invited
• [Presentation] O2 Pressure Dependence of Oxidation Rate on p- and n-Si(001) Surfaces (2018)
  • Author(s): Y. Sekihata, S. Ogawa and Y. Takakuwa
  • Organizer: 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
  • Int'l Joint Research
• [Presentation] Behavior of Ni Vacancy during Oxidation on Ni(111) Surfaces (2018)
  • Author(s): Binguo Zhang, Shuichi Ogawa, Yuji Takakuwa
  • Organizer: 14th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures
  • Int'l Joint Research
• [Presentation] O2 pressure dependence of initial oxidation kinetics on Ni(111) surfaces (2018)
  • Author(s): S. Ogawa, R. Taga, T. Ozaki, A. Yoshigoe, and Y. Takakuwa
  • Organizer: The 34th European Conference on Surface Science
  • Int'l Joint Research
• [Presentation] Photo-induced enhancement of oxidation on p- and n-type Si(001) surfaces (2018)
  • Author(s): Y. Sekihata, S. Ogawa, A. Yoshigoe, R. Taga, A. Klyushin, E. Carbonio, A. Knop-Gericke, and Y. Takakuwa
  • Organizer: The 34th European Conference on Surface Science
  • Int'l Joint Research
• [Presentation] リアルタイム光電子分光による表面反応プロセスの解明 (2018)
  • Author(s): 小川修一
  • Organizer: 2018年度微細構造解析プラットフォームシンポジウム
  • Invited
• [Presentation] 酸化Ni(111)表面の還元過程：真空およびH2中加熱の比較 (2018)
  • Author(s): 多賀 稜，小川 修一，尾崎 司，吉田 光，吉越 章隆，髙桑 雄二
  • Organizer: 第65回応用物理学会春季学術講演会
  • Invited
• [Presentation] リアルタイム光電子分光による Si(001)基板初期酸化過程における p 型 n 型伝導度依存の解明 (2017)
  • Author(s): 堰端勇樹，多賀稜，小川修一，髙桑雄二
  • Organizer: 平成28年度日本表面科学会東北・北海道支部講演会
  • Place of Presentation: 秋田大学（秋田県秋田市）
  • Year and Date: 2017-03-09
• [Presentation] 圧力急増によるSiO2/Si(001)界面酸化促進とその律速過程の解明 (2017)
  • Author(s): 小川修一, 高桑雄二
  • Organizer: 第78回応用物理学会 秋季学術講演会,
• [Presentation] Comparison of Initial Oxidation Kinetics between p- and n-type Si(001) Surfaces Studied by Real-time Photoelectron Spectroscopy (2017)
  • Author(s): Y. Sekihata, S. Ogawa, A. Yoshigoe, R. Taga, S. Ishidzuka, Y. Takakuwa
  • Organizer: AVS 64th International Symposium & Exhibition 2017
  • Int'l Joint Research
• [Presentation] O2 Pressure Dependence of SiO2/Si Interfacial Oxidation Rate Studied by Real-time Photoelectron Spectroscopy (2017)
  • Author(s): S. Ogawa, A. Yoshigoe, S. Ishidzuka, Y. Takakuwa
  • Organizer: AVS 64th International Symposium & Exhibition 2017
  • Int'l Joint Research
• [Presentation] Photo-Induced Enhancement of Oxidation on p- and n-type Si(001) surfaces (2017)
  • Author(s): Y. Sekihata, S. Ogawa, Y. Akitaka, R. Taga, A. Klyushin, E. Carbonio, A. Knop-Gericke, Y. Takakuwa
  • Organizer: 2017 International Workshop on Dielectric Thin Films for Future Electron Devices
  • Int'l Joint Research
• [Presentation] Si(100)表面室温酸化中の「分子状吸着酸素」の発見 -放射光が30年来の謎を解く- (2016)
  • Author(s): 吉越章隆、多賀稜、小川修一、高桑雄二
  • Organizer: 第16回東北大学多元物質科学研究所 研究発表会
  • Place of Presentation: 東北大学（宮城県仙台市）
  • Year and Date: 2016-12-07
• [Presentation] Interface oxidation enhancement at SiO2/Si(001) by raising O2 pressure (2016)
  • Author(s): S. Ogawa, J. Tang, R. Taga, Y. Takakuwa
  • Organizer: The 13th International Conference on Atomically Controlled Surfaces
  • Place of Presentation: Rome, Italy
  • Year and Date: 2016-10-09
  • Int'l Joint Research
• [Presentation] Comparative Study of O2 Adsorption Kinetics on p- and n-Si(001) Surfaces at Room Temperature (2016)
  • Author(s): R. Taga, K. Nishimoto, J. Tang, Z. Yu, S. Ogawa, Y. Takakuwa
  • Organizer: The 20th International Vacuum Congress
  • Place of Presentation: 釜山、韓国
  • Year and Date: 2016-08-21
  • Int'l Joint Research
• [Book] 放射光利用の手引き (2019)
  • Author(s): 東北放射光施設推進会議推進室
  • Total Pages: 344
  • Publisher: アグネ技術センター
  • ISBN: 9784901496957
• [Book] X線光電子分光法 (2018)
  • Author(s): 小川修一（分担執筆）
  • Total Pages: 368
  • Publisher: 講談社サイエンティフィク
  • ISBN: 9784065140475