Investigation of multiferroic GaFeO3-type oxide thin films
Project/Area Number |
16H06794
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Research Category |
Grant-in-Aid for Research Activity Start-up
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Allocation Type | Single-year Grants |
Research Field |
Inorganic materials/Physical properties
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Research Institution | The University of Tokyo (2017) Tokyo Institute of Technology (2016) |
Principal Investigator |
Katayama Tsukasa 東京大学, 大学院理学系研究科(理学部), 特任助教 (50784617)
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Project Period (FY) |
2016-08-26 – 2018-03-31
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Project Status |
Completed (Fiscal Year 2017)
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Budget Amount *help |
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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Keywords | 酸化物薄膜 / マルチフェロイック / 強磁性 / 強誘電性 / マルチフェロイック材料 / 酸化物 / 薄膜 / 強誘電 / パルスレーザー堆積法 |
Outline of Final Research Achievements |
I investigated chemical substitution effect on magnetic and ferroelectric properties of multiferroic GaFeO3-type oxide thin films. I found that leakage current significantly decreases with Sc doping, resulting in clear ferroelectric hysteresis loops. Furthermore, I found that the magnetic properties are widely controllable via chemical substitution.
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Report
(3 results)
Research Products
(13 results)
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[Journal Article] Topotactic fluorination of perovskite strontium ruthenate thin films using polyvinylidene fluoride2017
Author(s)
K. Kawahara, A. Chikamatsu, T. Katayama, T. Onozuka, D. Ogawa, K. Morikawa, E. Ikenaga, Y. Hirose, I. Harayama, D. Sekiba, T. Fukumura, and T. Hasegawa
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Journal Title
CrystEngComm
Volume: 19
Issue: 2
Pages: 313-317
DOI
Related Report
Peer Reviewed / Acknowledgement Compliant
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