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Rapid solution growth of SiC using 100% Cr solvent

Research Project

Project/Area Number 16K14445
Research Category

Grant-in-Aid for Challenging Exploratory Research

Allocation TypeMulti-year Fund
Research Field Metal making/Resorce production engineering
Research InstitutionTohoku University

Principal Investigator

Kawanishi Sakiko  東北大学, 多元物質科学研究所, 助教 (80726985)

Project Period (FY) 2016-04-01 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2017: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2016: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Keywordsシリコンカーバイド / 溶液成長 / クロム溶媒 / In-situ観察 / 結晶成長 / その場観察
Outline of Final Research Achievements

A study has been carried out to evaluate the effect of degree of supersaturation of carbon on solution growth behavior of 4H-SiC by using Cr-Si alloy solvent. At first, carbon solubilities of Cr-Si alloys at 1550 - 2000 °C were measured to assess degree of supersaturation during the growth experiments. Solution growths of SiC were then performed at 1700 °C by using Cr-Si alloy solvents with three different compositions. When Si-rich solvents were used, lateral growth of 4H-SiC was disturbed by the two-dimensional nucleation of 3C-SiC. On the contrary, Cr-rich solvents, which possess low degree of supersaturation, enabled the lateral growth to be maintained even under the rapid growth over 1 mm/h. It was thus clarified that the Cr-rich solvent is effective to achieve low temperature and rapid growth because of its low degree of supersaturation, which results in suppression of two-dimensional nucleation.

Report

(3 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Research-status Report
  • Research Products

    (9 results)

All 2018 2017

All Journal Article (2 results) (of which Peer Reviewed: 2 results) Presentation (7 results) (of which Int'l Joint Research: 3 results,  Invited: 2 results)

  • [Journal Article] In-situ Interface Observation of 3C-SiC Nucleation on Basal Planes of 4H-SiC during Solution Growth of SiC from Molten Fe-Si Alloy2018

    • Author(s)
      Sakiko Kawanishi and Takeshi Yoshikawa
    • Journal Title

      The Journal of The Minerals, Metals & Materials Society

      Volume: 印刷中

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Solution growth of silicon carbide using unary chromium solvent2017

    • Author(s)
      4.Ryo Miyasaka, Sakiko Kawanishi, Taka Narumi, Hideaki Sasaki, Takeshi Yoshikawa, Masafumi Maeda
    • Journal Title

      Journal of Crystal Growth

      Volume: 460 Pages: 23-26

    • DOI

      10.1016/j.jcrysgro.2016.12.049

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Presentation] Real-time Observation of Solution Growth Interface of SiC Using Alloy Solvent2018

    • Author(s)
      Sakiko Kawanishi, Takeshi Yoshikawa and Kazuki
    • Organizer
      TMS2018 147th Annual Meeting and Exhibition
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 1873-2273Kでの溶融Cr-Si-CおよびFe-Si-C合金の相互拡散係数2018

    • Author(s)
      川西咲子, 柴田浩幸, 吉川健
    • Organizer
      第65回日本応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Cr-Si溶媒を用いたSiCの溶液成長挙動に及ぼす炭素過飽和度の影響2018

    • Author(s)
      永松洋一郎, 川西咲子, 柴田浩幸, 吉川健
    • Organizer
      第65回日本応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Effect of degree of supersaturation on solution growth of 4H-SiC using Cr-Si solvent2017

    • Author(s)
      Yoichiro Nagamatsu, Sakiko Kawanishi, Hiroyuki Shibata and Takeshi Yoshikawa
    • Organizer
      The International Conference on Silicon Carbide and Related Materials 2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Thermodynamics of Cr in 4H-SiC at 1873 - 2273 K2017

    • Author(s)
      Sakiko Kawanishi, Hiroyuki Shibata and Takeshi Yoshikawa
    • Organizer
      The International Conference on Silicon Carbide and Related Materials 2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 単結晶SiCの溶液成長の物理化学2017

    • Author(s)
      川西咲子
    • Organizer
      日本金属学会, 第161回 2017年秋季講演大会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] Cr-Si系溶媒の過飽和度が4H-SiCの溶液成長挙動に及ぼす影響2017

    • Author(s)
      永松洋一郎, 川西咲子, 吉川健, 柴田浩幸
    • Organizer
      日本金属学会, 第161回 2017年秋季講演大会
    • Related Report
      2017 Annual Research Report

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Published: 2016-04-21   Modified: 2019-03-29  

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