| Budget Amount *help |
¥15,120,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥420,000)
Fiscal Year 2007: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2006: ¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 2005: ¥11,100,000 (Direct Cost: ¥11,100,000)
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| Research Abstract |
To form the basic technique for an atomic device, we study the identification of single atoms by the chemical interaction force, the movement of individual atoms by the vertical and lateral manipulation, and the construction of nano-scale device using the non-contact atomic force microscope (NC-AFM) with the performance of the highest class in the world (vertical resolution 1 pm, lateral resolution 10 pm). Concrete targets are ; the formation of the high dielectric and semiconducting surfaces controlled at an atomic level, the formation of the electrodes on macro, micro, and nano scale on the flat semiconductor and insulator (ionic single crystal or high dielectric material) surfaces at an atomic level, and the creation of the structure of an atomic device by the RT manipulation of Si, Ge, and Sn atoms (in IV group) deposited on the step edge, and verification of the device functions.
(1) Formation of nanostructures (Nano-metal wires) on Si (100) semiconductor surface
(2) Nano-clusters, Nano-islands formed for nano-electrodes use on Si (111) semiconductor surface
(3) NC-AFM study in atomic steps of high dielectric material SrTiO3
(4) Force and potential mappings on insulator surface (ionic crystal, KC1)
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