Development and characterization of an atomic device by the manipulation
Project/Area Number |
17310083
|
Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Microdevices/Nanodevices
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Research Institution | Osaka University |
Principal Investigator |
YI Insook Osaka University, Graduate School of Engineering, Lecturer (40379128)
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Project Period (FY) |
2005 – 2007
|
Project Status |
Completed (Fiscal Year 2007)
|
Budget Amount *help |
¥15,120,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥420,000)
Fiscal Year 2007: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2006: ¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 2005: ¥11,100,000 (Direct Cost: ¥11,100,000)
|
Keywords | Scanning Probe Microscope / Micro-Nano device / Nano contact / 操作プローブ顕微鏡 |
Research Abstract |
To form the basic technique for an atomic device, we study the identification of single atoms by the chemical interaction force, the movement of individual atoms by the vertical and lateral manipulation, and the construction of nano-scale device using the non-contact atomic force microscope (NC-AFM) with the performance of the highest class in the world (vertical resolution 1 pm, lateral resolution 10 pm). Concrete targets are ; the formation of the high dielectric and semiconducting surfaces controlled at an atomic level, the formation of the electrodes on macro, micro, and nano scale on the flat semiconductor and insulator (ionic single crystal or high dielectric material) surfaces at an atomic level, and the creation of the structure of an atomic device by the RT manipulation of Si, Ge, and Sn atoms (in IV group) deposited on the step edge, and verification of the device functions. (1) Formation of nanostructures (Nano-metal wires) on Si (100) semiconductor surface (2) Nano-clusters, Nano-islands formed for nano-electrodes use on Si (111) semiconductor surface (3) NC-AFM study in atomic steps of high dielectric material SrTiO3 (4) Force and potential mappings on insulator surface (ionic crystal, KC1)
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Report
(4 results)
Research Products
(32 results)
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[Journal Article] Non-contact atomic force microscopy study of the Sn/Si(111) mosaic phase2005
Author(s)
Y., Sugimoto, M., Abe, K., Yoshimoto, O., Custance, Insook., Yi, Seizo, Morita
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Journal Title
Applied Surface Science vol.241
Pages: 23-27
Description
「研究成果報告書概要(欧文)」より
Related Report
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[Presentation] Atomic structure of Ge clusters on Si(111)-(7x7) by non-contact AFM2006
Author(s)
Insook, Yi, Y., Sugimoto, R., Nishi, M., Abe, S., Morita
Organizer
Proc. 9th NC-AFM, Kobe
Place of Presentation
Japan
Year and Date
2006-07-16
Description
「研究成果報告書概要(欧文)」より
Related Report
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[Presentation] Lateral manipulation of single atomic defect on ionic crystal surface2006
Author(s)
R., Nishi, D., Miyagawa, H., Etou, Insook, Yi, S., Morita
Organizer
Proc. 9th NC-AFM, Kobe
Place of Presentation
Japan
Year and Date
2006-07-16
Description
「研究成果報告書概要(欧文)」より
Related Report
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[Presentation] NC-AFM study on atomic defects formed on ionic crystal by Nanoindentation2005
Author(s)
R., Nishi, D., Miyagawa, H., Etou, Insook, Yi, S., Morita
Organizer
Proc. 8th NC-AFM, Bad Essen
Place of Presentation
Germany
Year and Date
2005-08-15
Description
「研究成果報告書概要(欧文)」より
Related Report
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[Presentation] NC-AFM observation on cleavage surfaces of the mixed alkali halide crystal2005
Author(s)
H., Etou, D., Miyagawa, R., Nishi, Insook, Yi, S., Morita
Organizer
Proc. 8'h NC-AFM, Bad Essen
Place of Presentation
Germany
Year and Date
2005-08-15
Description
「研究成果報告書概要(欧文)」より
Related Report
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[Presentation] Atomic step structure formed by nanoscraching on alkali halide surface using an AFM2005
Author(s)
D., Miyagawa, H., Etou, R., Nishi, Insook, Yi, S., Morita
Organizer
Proc. 8th NC-AFM, Bad Essen
Place of Presentation
Germany
Year and Date
2005-08-15
Description
「研究成果報告書概要(欧文)」より
Related Report