Zinc Oxide-Based Semiconductor Quasi Alloys Exhibiting p-Type Conductivity
| Project/Area Number |
17360010
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kyoto University |
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Principal Investigator |
FUJITA Shizuo Kyoto University, International Innovation Center, Professor (20135536)
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| Project Period (FY) |
2005 – 2006
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| Project Status |
Completed (Fiscal Year 2006)
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| Budget Amount *help |
¥14,200,000 (Direct Cost: ¥14,200,000)
Fiscal Year 2006: ¥6,600,000 (Direct Cost: ¥6,600,000)
Fiscal Year 2005: ¥7,600,000 (Direct Cost: ¥7,600,000)
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| Keywords | zinc oxide / p-type / quasi alloy / superlattice / doping / molecular beam epitaxy / cupper-based oxide thin film / wide band gap semiconductor / 擬似混晶 / p型伝導 / デラフォサイト型酸化物 / MBE / サブバンド形成 / 紫外発光デバイス |
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| Research Abstract |
The objective of this research is to realize p-type Zn(Mg)O quasialloys, which consist with superlattices of p-type wide band gap oxide semiconductors and Zn(Mg)O thin films, and can be coherently grown on Zn(Mg)O. Zn(Mg)O semiconductors, being supported by their unique excitonic properties, have attracted increasing attentions toward their applications to ultraviolet optical devices such as light emitting diodes. However, the difficulty in achieving p-type conductivity has significantly obstructed their applications. This research, based on our original technologies, contributes to offer the breakthroughs to overcome the above problems and to promote the device applications of Zn(Mg)O semiconductors.
As candidate materials with which Zn(Mg)O forms superlattices, we considered cupper-based oxides such as CuO, Cu_2O, CuInO_2, CuGaO_2, and CuAlO_2. These materials exhibit p-type conductivity and their shapes of crystal planes are similar to that of c-axis oriented hexagonal ZnO. Among them, an attention has been focused on CuGaO_2 because of its wide band gap energy of 3.6eV, delafossite crystal structure that can be matched to c-faces of ZnO, and small lattice mismatch, smaller than 1%, to ZnO.
The crystal growth has been done by molecular beam epitaxy (MBE). The irradiation of Cu and O resulted in CuO films. The CuO crystal takes cubic structure but a very thin film on ZnO has grown coherently to ZnO keeping hexagonal structure. However, no p-type conductivity was confirmed with CuO. On the other hand, the irradiation of Ga and O formed Ga_2O_3. This has very wide band gap of close to 5eV and exhibited sharp absorption edges. The alloys of both materials, CuGaO_2, showed p-type conductivity with the carrier concentration of 9×10^<14>cm^<-3> and Hall mobility of 3. 5cm^2/Vs. This result was successfully followed by p-type CuGaO_2/ZnO superlattices with the carrier concentration of the order of 10^<14>cm^<-3>.
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Report
(3 results)
Research Products
(15 results)
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[Presentation] 酸化亜鉛系半導体ナノ構造2007
Author(s)
藤田 静雄
Organizer
2007年春季第54回応用物理学関係連合講演会
Place of Presentation
青山学院大学
Year and Date
2007-03-29
Description
「研究成果報告書概要(和文)」より
Related Report
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