| Project/Area Number |
17360051
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Materials/Mechanics of materials
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| Research Institution | The University of Tokushima |
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Principal Investigator |
MURAKAMI Ri-ichi The Univ.of Tokushima, Institute of Technology and Science, Professor, 大学院ソシオテクノサイエンス研究部, 教授 (00112235)
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| Co-Investigator(Kenkyū-buntansha) |
YONEKURA Daisuke The Univ.of Tokushima, Institute of Technology and Science, Assist.Professor, 大学院ソシオテクノサイエンス研究部, 助手 (70314846)
辛 道勲 徳島大学, 工学部, 助手 (50380118)
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| Project Period (FY) |
2005 – 2006
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| Project Status |
Completed (Fiscal Year 2006)
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| Budget Amount *help |
¥14,900,000 (Direct Cost: ¥14,900,000)
Fiscal Year 2006: ¥7,000,000 (Direct Cost: ¥7,000,000)
Fiscal Year 2005: ¥7,900,000 (Direct Cost: ¥7,900,000)
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| Keywords | Transparent conductive film / Gas barrier film / Multilayer / Sputtering |
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| Research Abstract |
The aim of this study is to clarify the influence of depositing condition on oxygen transmittance, transparency of Si-O-N film deposited on PET. In addition, we also examined the influence of multilayer depositing on the optical and electrical properties of IZO film deposited onto Si-O-N film/PET substrate.
As a result of Si-O-N film, the oxygen transmittance rate (OTR) and the transparency strongly depended on nitrogen flow rate (N_2/(N_2+Ar)) and film thickness. The minimum OTR was 1〜2 cc/m^2・day・atm at N_2/(N_2+Ar) = 0.08 with 30 nm thick. Moreover, it was clarified that the dispersion of OTR of Si-O-N coatings strongly depended on the state of chamber wall. The dispersion of OTR was improved from 3 to 0.5 cc/m^2・day・atm by polishing of chamber wall before every coating batch. The OTR level was also improved up to 0.88 cc/m^2・day・atm by chamber wall polishing.
The Si-O-N/IZO multilayered film showed higher electrical resistance than mono layered IZO film. This is because that the Si-O-N/IZO interface has high oxygen content. Since the high oxygen atoms at the interface suppress the formation of vacancy of oxygen, the conductivity of multilayered film decreases. To reduce the influence of high oxygen content layer on the conductivity of the multilayer, the IZO film was deposited without introducing oxygen gas at the initial stage. As a result, the conductivity of oxygen controlled multilayered film was same level as mono layered IZO film.
In conclusion, (i) the oxygen barrier property of Si-O-N film can be controlled by controlling nitrogen flow rate during the deposition and the property can be improved by deposition at the optimum nitrogen flow rate, (ii) the Si-O-N/IZO multilayered film can keep the conductivity by controlling the oxygen content at the Si-O-N/IZO interface.
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