Basic research for development of electronics devices with strain-Si

• Project/Area Number: 17360139
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kyoto University
• Principal Investigator: KIMURA Kenji Kyoto University, Graduate School of Engineering, Professor (50127073)
• Co-Investigator(Kenkyū-buntansha): SUZUKI Motofumi Kyoto Univ., Graduate School of Engineering, Associate professor (00346040) ; NAKAJIMA Kaoru Kyoto Univ., Graduate School of Engineering, Associate professor (80293885)
• Project Period (FY): 2005 – 2007
• Project Status: Completed (Fiscal Year 2007)
• Budget Amount: ¥16,140,000 (Direct Cost: ¥15,300,000、Indirect Cost: ¥840,000); Fiscal Year 2007: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000); Fiscal Year 2006: ¥5,800,000 (Direct Cost: ¥5,800,000); Fiscal Year 2005: ¥6,700,000 (Direct Cost: ¥6,700,000)
• Keywords: strain-Si / high-resolution RBS / ion implantation / Ge growth / oxidation of Si / ひずみ測定

Research Abstract

New goniometers and load lock chambers were developed for the present high-resolution Rutherford backscattering spectroscopy (HRBS) system. By performing the channeling angular scan with the improved HRBS system and comparing the result with a trajectory simulation of channeling ions, the strain in the strain-Si grown on a SiGe layer was measured for both ion-implanted strain-Si samples and strain-Si samples annealed after ion implantation. It was found that the strain was recovered after annealing.
Germanium was epitaxially grown on a clean (001) surface of strain-Si and the growth process was observed in situ with HRBS. For comparison a similar measurement was done with normal Si It was hind that the interdiffusion between Ge and strain-Si is enhanced as compared with the normal Si The effect of strain on the initial oxidation process of Si(001) was also studied by in-situ HRBS observation. The saturation oxygen coverage on the strain-Si was hind to be the same as the normal Si at room temperature (RT) as well as at 640℃. More detailed observation at RT revealed that there is no difference at the oxygen exposure of 12 L but oxygen coverage for the strain-Si is larger at 30 L. This result together with the first principles calculation suggests that the effect of the strain on the oxidation depends on the adsorption site for oxygen.

Research Products

• [Journal Article] Measurement of the strain in strained-Si/Si_<0.79>Ge_<0.21> with HRBS/channeling (2006)
  • Author(s): T. Matsushita, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, A. Agarwal, H.-J. Gossmann, M. Ameen, H. Harima
  • Journal Title: Nuclear Instruments and Methods in Physics Research B 249 Pages: 432-435
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Nuclear. Instruments, and Methods (2006)
  • Author(s): T., Matsushita, W., Sakai, K., Nakajima, M., Suzuki, K., Kimura, A., Agarwal, H.-J., Gossmann, M., Ameen, H., Harima
  • Journal Title: Physics Research B Vol.249 Pages: 432-435
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Measurement of the strain in strained-Si/Si_<0.79>Ge_<0.21> eith HRBS/channeling (2006)
  • Author(s): T.Matsushita, W.Sakai, K.Nakajima, M.Suzuki, K.Kimura, A.Agarwal, H.-J.Gossmann, M.Ameen, H.Harima
  • Journal Title: Nuclear Instruments and Methods in Physics Research B 249 Pages: 432-435
• [Journal Article] Radiation Damage induced by 5 keV Si^+ ion implantation in Strained-Si/Si_<0.8>Ge_<0.2> (2005)
  • Author(s): T. Matsushita, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, A. Agarwal. H.-J. Gossmann, M. Ameen
  • Journal Title: Nuclear Instruments and Methods in Physics Research B 230 Pages: 230-233
  • Description: 「研究成果報告書概要(和文)」より
  • Peer Reviewed
• [Journal Article] Nuclear. Instruments. and Methods (2005)
  • Author(s): T., Matsushita, W., Sakai, K., Nakajima, M., Suzuki, K., Kimura, A., Agarwal, H.-J., Gossmann, M., Ameen
  • Journal Title: Physics Research B Vol.230 Pages: 230-233
  • Description: 「研究成果報告書概要(欧文)」より
• [Journal Article] Radiation Damage induced by 5 keV Si^+ ion implantation in Strained-Si/Si_<0.8>Ge_<0.2>" (2005)
  • Author(s): T.Matsushita, W.Sakai, K.Nakajima, M.Suzuki, K.Kimura, A.Agarwal, H.-J.Gossmann, M.Ameen
  • Journal Title: Nuclear Instruments and Methods B 230 Pages: 230-233
• [Presentation] 高分解能RBSによる歪Si(001)の酸化初期過程の観察 (2008)
  • Author(s): 入谷健元、錦織雅弘, 中嶋 薫, 鈴木基史, 木村健二
  • Organizer: 2008年春季第55回応用物理学会関係連合講演会
  • Place of Presentation: 日本大学船橋キャンパス
  • Year and Date: 2008-03-28
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Observation of initial oxidation process of strain-Si(001) using high-resolution RBS (2008)
  • Author(s): K., Iritani, M., Nishikoori, K., Nakajima, M., Suzuki, K., Kimura
  • Organizer: Annual meeting of the Japan Society of Applied Physics
  • Place of Presentation: Nihon University
  • Year and Date: 2008-03-28
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] 高分解能RBSによる歪Si(001)上のGe成長初期過程の観察 (2007)
  • Author(s): 錦織雅弘, 中嶋 薫, 鈴木基史, 木村健二
  • Organizer: 2007年秋季第68回応用物理学会学術講演会
  • Place of Presentation: 北海道工業大学
  • Year and Date: 2007-09-04
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Observation of initial growth process of Ge on straine-Si(001) using high-resolution 1285 (2007)
  • Author(s): M., Nishikoori, K., Nakajima, M., Suzuki, K., Kimura
  • Organizer: Annual meeting of the Japan Society of Applied Physics
  • Place of Presentation: Hokkaido Institute of Technology
  • Year and Date: 2007-09-04
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] 高分解能RBSによる歪Siの歪み評価 (2006)
  • Author(s): 一原主税, 小林 明, 牟礼祥一, 藤川和久, 笹川 薫, 小椋厚志, 木村健二
  • Organizer: 2006年春季第53回応用物理学会関係連合講演会
  • Place of Presentation: 武蔵工科大学
  • Year and Date: 2006-03-22
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Strain measurement using high-resolution RBS (2006)
  • Author(s): C., Ichihara, A., Kobayashi, S.,Mure, K., Fujikawa, K., Sasakawa, A., Ogura, K., Kimura
  • Organizer: Annual meeting of the Japan Society of Applied Physics
  • Place of Presentation: Musashi Institute of Technology
  • Year and Date: 2006-03-22
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Measurement of the strain in strained-Si/Si_<0.79>Ge_<0.21> with HRBS/channeling (2005)
  • Author(s): T. Matsushita, W. Sakai, K. Nakajima, M. Suzuki, K. Kimura, A. Agarwal, H.-J. Gossmann, M. Ameen, H. Harima
  • Organizer: The 17th International Conference on Ion Beam Analysis
  • Place of Presentation: Sevilla, Spain
  • Year and Date: 2005-06-28
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Measurement of the strain in strained-Si/Si0.79Ge0.21 with HRBS/channeling (2005)
  • Author(s): T., Matsushita, W., Sakai, K., Nakajima, M., Suzuki, K., Kimura, A., Agarwal, H.-J., Gossmann, M., Ameen, H., Harima
  • Organizer: The 17th International Conference on Ion Beam.Analysis
  • Place of Presentation: Sevilla, Spain
  • Year and Date: 2005-06-28
  • Description: 「研究成果報告書概要(欧文)」より
• [Presentation] Influence of strain on radiation damage studied by high-resolution RBS (2005)
  • Author(s): T. Matsushita, K. Nakajima, M. Suzuki, K. Kimura, A. Agarwal, H.-J. Gossmann, M. Ameen
  • Organizer: The 3rd International Workshop on High-Resolution Depth Profiling
  • Place of Presentation: Bar harbor, Maine, USA
  • Year and Date: 2005-05-25
  • Description: 「研究成果報告書概要(和文)」より
• [Presentation] Influence of strain on radiation damage studied by high-resolution RBS (2005)
  • Author(s): T., Matsushita, K., Nakajima, M., Suzuki, K., Kimura, A., Agarwal, H.-J., Gossmann, M., Ameen
  • Organizer: The 3rd International Workshop on High-Resolution Depth Profiling
  • Place of Presentation: Bar Harbor, Maine, USA
  • Year and Date: 2005-05-25
  • Description: 「研究成果報告書概要(欧文)」より