Development of Environmentally-Friendly High Power Density Thermoelectric Module by using Titanium Alloys
| Project/Area Number |
17360465
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Energy engineering
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| Research Institution | Osaka University |
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Principal Investigator |
YAMANAKA Shinsuke Osaka University, Graduate School of Engineering, Professor, 大学院工学研究科, 教授 (00166753)
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| Co-Investigator(Kenkyū-buntansha) |
UNO Masayoshi Osaka University, Graduate School of Engineering, Associate Professor, 大学院工学研究科, 助教授 (00232885)
KUROSAKI Ken Osaka University, Graduate School of Engineering, Assistant Professor, 大学院工学研究科, 助手 (90304021)
MUTA Hiroaki Osaka University, Graduate School of Engineering, Assistant Professor, 大学院工学研究科, 助手 (60362670)
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| Project Period (FY) |
2005 – 2006
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| Project Status |
Completed (Fiscal Year 2006)
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| Budget Amount *help |
¥15,500,000 (Direct Cost: ¥15,500,000)
Fiscal Year 2006: ¥4,700,000 (Direct Cost: ¥4,700,000)
Fiscal Year 2005: ¥10,800,000 (Direct Cost: ¥10,800,000)
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| Keywords | thermophysical properties / energy / thermoelectrics / utilization of exhaust heat / electronic materials / electronic devices |
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| Research Abstract |
The effectiveness of a material for thermoelectric applications is determined by the dimensionless figure of merit ZT, where T is the absolute temperature and Z=(S^2σ)/k (S is the Seebeck coefficient, a the electrical conductivity, and k the thermal conductivity). We have taken particular note of 18 electron half-Heusler compounds as new thermoelectric materials because of their semiconductor like band structure. In the present study, in order to develop an environmentally-friendly high-density thermoelectric module, we studied titanium-based half-Heusler alloys as advanced thermoelectric materials.
For n-type materials, we have succeeded in developing high ZT materials by doping Nb on the Ti or Zr site of (Ti, Zr)NiSn half-Heusler compounds. The maximum ZT value is 0.7 obtained at 970 K. For p-type materials, Sn-doped (Ti, Zr)CoSb exhibited relatively high ZT values ; the maximum is 0.46 obtained at 960 K. It can be concluded that the titanium based half-Heusler compounds have a potential to be good thermoelectric materials at high temperature around 1000 K.
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Report
(3 results)
Research Products
(21 results)
