Growth of gaseous macromolecules in the downstream region of fluorocarbon plasmas and its application
Project/Area Number |
17540471
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Plasma science
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Research Institution | KYUSHU UNIVERSITY |
Principal Investigator |
FURUYA Kenji Kyushu University, Interdisciplinary Graduate School of Engineering Sciences, Associate Professor, 大学院総合理工学研究院, 助教授 (70229128)
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Project Period (FY) |
2005 – 2006
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Project Status |
Completed (Fiscal Year 2006)
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Budget Amount *help |
¥3,700,000 (Direct Cost: ¥3,700,000)
Fiscal Year 2006: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 2005: ¥2,300,000 (Direct Cost: ¥2,300,000)
|
Keywords | Fluorocarbon / Plasma / Mass spectrometry / Growth of gaseous molecules / Reaction Mechanism / Thin Film |
Research Abstract |
The growth of gaseous neutral species and positive ions has been investigated in the downstream region of Ar/CF_4 plasmas by mass spectrometry. As a result, it has been found that there are several series of C_nF_<2n+1>^+, CnF_2_<n-1>^+ and C_nF_<2n-3>^+ for the positive ions and C_nF_<2n+2> and C_nF_<2n> for the neutral species up to 400 amu. The logarithmic plots of the C_nF_<2n+1>^+ intensity with respect to the mass number is decreased linearly with increase of the mass number. This is the case for the C_nF_<2n-1>^+ series, and its slope is gentler than that in the C_nF_<2n+1>^+ series. The reaction enthalpies estimated from ab initio calculations result in that C_2F_5^+ is dominantly produced through the addition reaction between CF_3^+ and CF_2 and that C_3F_5^+ is produced through the reactions, C_3F_7^+ + CF_2→C_3F_5^+ + CF_4, C_2F_5^+ + CF→C_3F_5^+ + F and C_3F_7^+ + CF→C_3F_5^+ + CF_3. The linearity of the plots can be explained by considering the rate equations for the addition reactions of CF_2 to C_nF_<2n+1>^+ (n【greater than or equal】2) and C_nF_<2n-1>^+ (n【greater than or equal】3) under the steady-state approximation. In addition, Polymeric perfluorocarbon was deposited on the Si, Ag and Al substrates in Ar/c-C_4F_8 plasmas under a deposition rate of 10 nm/h for seven hours. The X-ray photoelectron spectra and atomic force microscope images of the deposited materials were observed. As a result, it has been found that the surface structure and chemical bonding of the deposited materials is remarkably different from each other, depending on the kind of the substrate.
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Report
(3 results)
Research Products
(12 results)