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Formation of Buried Oxide Layer in Epitaxial Silicon Wafers

Research Project

Project/Area Number 17560014
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeSingle-year Grants
Section一般
Research Field Applied materials science/Crystal engineering
Research InstitutionFukui University of Technology

Principal Investigator

UMENO Masataka  Fukui University of Technology, Faculty of Engineering, Professor, 工学部, 教授 (50029071)

Co-Investigator(Kenkyū-buntansha) SHIMURA Takayoshi  Osaka University, Faculty of Engineering, Associate Professor, 大学院・工学研究科, 准教授 (90252600)
Project Period (FY) 2005 – 2006
Project Status Completed (Fiscal Year 2006)
Budget Amount *help
¥3,400,000 (Direct Cost: ¥3,400,000)
Fiscal Year 2006: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 2005: ¥2,000,000 (Direct Cost: ¥2,000,000)
KeywordsSOI / Silicon / Buried Oxide / Thermal Oxidation / MBE / SOIウエーハ / SIMOX / 結晶工学 / LSI基板 / SOI
Research Abstract

The probable formation of buried oxide layer in a silicon wafer by a new method which would lead to the production of SOI wafers for the cutting-edge ULSIs is studied. High graded SOI wafers for the ULSI devices are produced either by the wafer bonding method or oxygen ion implantation followed by high temperature annealing. However, both methods require highly sophisticated production techniques such as the smart cut technique in bonding method and the Itox technique in SIMOX (Separation by Implanted Oxygen) wafer and hence the prices of SOI wafers are high limiting the preventing the wide use of the SOI wafers in usual ULSI devices. This study aims to produce a buried oxide without using either bonding or oxygen ion implantation. As in the SIMOX wafers the buried oxide is formed during the high temperature annealing process at the damage layer formed by ion implantation, we produced the damage layer by MBE method. There are some methods to introduce a damage layer in the epitaxially grown Si crystals and we employed two methods in this study. That is, (a) a change of the substrate temperature was introduced during the MBE growth and (b) 1 or 2 Ge layers are sandwiched in MBE silicon crystal. The specimens were annealed in various conditions in oxidizing atmospheres and investigated by spectroscopic ellipsometry and by depth analyses with SIMS. The expected oxide layer was not found at present. It is probable that the damage layers produced above methods are easily relaxed in the early stage of the annealing and we try to produce more robast damage layer having atoms with low diffusion velocities in silicon crystals.

Report

(3 results)
  • 2006 Annual Research Report   Final Research Report Summary
  • 2005 Annual Research Report
  • Research Products

    (16 results)

All 2006 2005

All Journal Article (16 results)

  • [Journal Article] Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers2006

    • Author(s)
      T.Shimura, M.Shimizu, S.Horiuchi, H.Watanabe, Y.Yasutake, M.Umeno
    • Journal Title

      Appl. Phys. Letters 89

    • NAID

      120007183055

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] White X-ray Topography of Lattice Undulation in Bonded Silicon-On-Insulator Wafers2006

    • Author(s)
      K.Fukuda, T.Yoshida, T.Shimura, K.Yasutake, M.Umeno, S.Iida
    • Journal Title

      Jpn. J. Appl. Phys. 45-9

      Pages: 6795-6799

    • NAID

      10018245181

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers2006

    • Author(s)
      T.Shimura, M.Shimizu, S.Horiuchi, H.Watanabe, Y.Yasutake, M.Umeno
    • Journal Title

      Appl.Phys.Letters 89

    • NAID

      120007183055

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] White X-ray Topography of Lattice Undulation in Bonded Silicon-On-Insulator Wafers2006

    • Author(s)
      K.Fukuda, T.Yoshida, T.Shimura, K.Yasutake, M.Umeno, S.Iida
    • Journal Title

      Jpn.J.Appl.Phys. 45(9A)

      Pages: 6795-6799

    • NAID

      10018245181

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Self-limiting oxidation of SiGe alloy on silicon-on-insulator wafers2006

    • Author(s)
      T.Shimura
    • Journal Title

      Appl. Phys. Letters 89

    • NAID

      120007183055

    • Related Report
      2006 Annual Research Report
  • [Journal Article] White X-ray Topography of Lattice Undulation in Bonded Silicon-On-Insulator Wafers2006

    • Author(s)
      K.Fukuda
    • Journal Title

      Jpn. J. Appl. Phys. 45・9A

      Pages: 6795-6799

    • Related Report
      2006 Annual Research Report
  • [Journal Article] Comparison of ordered structure in buried oxide layers in high-dose, low-dose, and internal- thermal-oxidation separation-by-implanted-oxygen wafers2005

    • Author(s)
      Takayoshi Shimura, F.Kazunori, K.Yasutake, T.Hosoi, M.Umeno
    • Journal Title

      Thin Solid Films 476-1

      Pages: 125-129

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] X-ray diffraction measurements of internal strain in Si nanowires fabricated using a self-limiting oxidation process2005

    • Author(s)
      T.Shimura, K.Yasutake, M.Umeno, M.Nagase
    • Journal Title

      Appl. Phys. Letters 86

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Reactions and diffusion of atomic and molecular oxygen in the SiO_2 network2005

    • Author(s)
      T.Tatsumura, T.Shimura, E.Mishima, K.Kawamura, D.Yamasaki, H.Yamamoto, T.Watanabe, M.Umeno, I.Ohdomari
    • Journal Title

      Phys. Rev. B 72-4

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Ordered Structure in the Thermal Oxide Layer on Silicon Substrates2005

    • Author(s)
      T.Shimura, E.Mishima, H.Watanabe, K.Yasutake, M.Umeno, K.Tatsumura, T.Watanabe, I.Ohdomari, K.Yamada, S.Kamiyama, Y.Akasaka, Y.Nara, K.Nakamura
    • Journal Title

      ECS Transactions 1-1

      Pages: 39-48

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Comparison of ordered structure in buried oxide layers in high-dose, low-dose, and internal-thermal-oxidation separation-by-implanted-oxygen wafers2005

    • Author(s)
      Takayoshi Shimura, F.Kazunori, K.Yasutake, T.Hosoi, M.Umeno
    • Journal Title

      Thin Solid Films vol.476-1

      Pages: 125-129

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] X-ray diffraction measurements of internal strain in Si nanowires fabricated using a self-limiting oxidation process2005

    • Author(s)
      T.Shimura, K.Yasutake, M.Umeno, M.Nagase
    • Journal Title

      Appl.Phys.Letters 86

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary 2005 Annual Research Report
  • [Journal Article] Reactions and diffusion of atomic and molecular oxygen in the SiO_2 network2005

    • Author(s)
      T.Tatsumura, T.Shimura, E.Mishima, K.Kawamura, D.Yamasaki, H.Yamamoto, T.Watanabe, M.Umeno, I.Ohdomari
    • Journal Title

      Phys.Rev.B 72(4)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary 2005 Annual Research Report
  • [Journal Article] Ordered Structure in the Thermal Oxide Layer on Silicon Substrates2005

    • Author(s)
      T.Shimura, E.Mishima, H.Watanabe, K.Yasutake, M.Umeno, K.Tatsumura, T.Watanabe, I.Ohdomari, K.Yamada, S.Kamiyama, Y.Akasaka, Y.Nara, K.Nakamura
    • Journal Title

      ECS Transactions Vol.1 No1

      Pages: 39-48

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      2006 Final Research Report Summary
  • [Journal Article] Comparison of ordered structure in buried oxide layers in high-dose, low-dose, and internal-thermal-oxidation separation-by-implanted-oxygen wafers2005

    • Author(s)
      T.Shimura, K.Fukuda, K.Yasutake, T.Hosoi, M.Umeno
    • Journal Title

      Thin Solid Films 476-1

      Pages: 125-129

    • Related Report
      2005 Annual Research Report
  • [Journal Article] Ordered Structure in the Thermal Oxide Layer on Silicon Substrates2005

    • Author(s)
      T.Shimura, E.Mishima, H.Watanabe, K.Yasutake, M.Umeno, K.Tatsumura, T.Watanabe, I.Ohdomari, K.Yamada, S.Kamiyama, Y.Akasaka, Y.Nara, K.Nakamura
    • Journal Title

      ECS Transactions 1(1)

      Pages: 39-48

    • Related Report
      2005 Annual Research Report

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Published: 2005-04-01   Modified: 2016-04-21  

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