Room-Temperature Continuous-Wave Operation of Quantum Cascade Lasers Using Nitride Semiconductor with a High In Composition
Project/Area Number |
17560040
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied optics/Quantum optical engineering
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Research Institution | Ritsumeikan University |
Principal Investigator |
KASAHARA Kenichi Ritsumeikan University, Department of Science and Engineering, Professor (70367994)
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Co-Investigator(Kenkyū-buntansha) |
ARAKI Tsutomu Ritsumeikan University, Department of Science and Engineering, Associate Professor (20312126)
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Project Period (FY) |
2005 – 2007
|
Project Status |
Completed (Fiscal Year 2007)
|
Budget Amount *help |
¥3,750,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥150,000)
Fiscal Year 2007: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2006: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 2005: ¥1,700,000 (Direct Cost: ¥1,700,000)
|
Keywords | Quantum Cascade Laser / Nitride Semiconductor / Optical Device / Environment / Life Science / 窒化物半導体 / 生命科学 |
Research Abstract |
We have performed two studies toward the goal of this project 1) Research on the gain curve of the quantum cascade laser (QCL): Knowing the electron distributions in the upper and lower subbands of the QCL, and the resultant gain curve is critical to reduce the threshold current, and to achieve room-temperature continuous-wave operation. Investigation of the QCL's linewidth enhancement factor (α-factor) offers clues about them. It has been predicted that QCLs would have an α of zero as a result of intersubband symmetric gains. Using a new asymmetric self-mixing method, we have first identified that α-factors of InGaAs/InAlAs QCLs are smaller than those of conventional semiconductor laser-diodes with interband transition, but not zero. We have also demonstrated the detuning property of the α-factor, which showed that the gain was asymmetric around the gain peak. The nonparabolicity of the subbands was a possible cause of the α-factor's asymmetry, which produces inhomogeneous broadening
… More
and an asymmetric optical gain spectrum with a long wavelength tail. Taking the nonparabolicity into account, we determined the QCL gain spectrum. The dependence of the α-factor on detuning was in reasonable agreement with the calculation that accounts for the asymmetry in gain. 2) Development of the InN/InGaN epitaxial growth technique: Non-polar A-plane (11-20) high In content InGaN was grown on R-plane (10-12) sapphire with an InN template by radio-frequency (RF) plasma assisted molecular beam epitaxy. Nitridation of R-plane sapphire was carried out at 300℃ by RF-nitrogen plasma. A template of A-plane InN was grown at 400℃. The In-rich InGaN films were then grown at the same temperature on the InN template. We characterized the films using reflection high-energy electron diffraction, X-ray diffraction, scanning electron microscopy and photo-luminescence (PL). These results indicated clearly that non-polar In_<0.71>Ga_<0.29>N was successfully obtained with a PL emission at approximate 1.1 eV. Less
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Report
(4 results)
Research Products
(46 results)
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[Presentation] 量子カスケード・レーザの光ビーム特性2008
Author(s)
熊崎 直樹, 高木 陽平, 石原 幹斗, 笠原 健一, 秋草 直大, 枝村 忠孝
Organizer
平成20年度秋季第応用物理学関係連合講演会
Place of Presentation
千葉
Description
「研究成果報告書概要(和文)」より
Related Report
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[Presentation] 量子カスケードレーザの遠視野像2008
Author(s)
石原 幹斗, 熊崎 直樹, 高木 陽平, 笠原 健一, 秋草 直大, 枝村 忠孝
Organizer
電子情報通信学会総合大会講演会
Place of Presentation
北九州学術研究都市
Description
「研究成果報告書概要(和文)」より
Related Report
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[Presentation] 量子カスケードレーザの線幅増大係数2007
Author(s)
熊崎 直樹, 高木 陽平, 熊本 哲郎, 笠原 健一, 秋草 直大, 枝村 忠孝
Organizer
平成19年度春季第応用物理学関係連合講演会
Place of Presentation
東京
Description
「研究成果報告書概要(和文)」より
Related Report
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[Presentation] 熊崎直樹,高木陽平,石原幹斗,笠原健一,秋草直大,枝村忠孝2007
Author(s)
熊崎 直樹, 高木 陽平, 石原 幹斗, 笠原 健一, 秋草 直大, 枝村 忠孝
Organizer
平成19年度秋季第応用物理学関係連合講演会
Place of Presentation
北海道
Description
「研究成果報告書概要(和文)」より
Related Report
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