| Project/Area Number |
17560071
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Materials/Mechanics of materials
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| Research Institution | The University of Tokushima |
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Principal Investigator |
HANABUSA Takao The University of Tokushima, Institute of Technology and Science, Professor, 大学院ソシオテクノサイエンス研究部, 教授 (20035637)
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| Co-Investigator(Kenkyū-buntansha) |
KUSAKA Kazuya The University of Tokushima, Institute of Technology and Science, Assistant, 大学院ソシオテクノサイエンス研究部, 助手 (70274256)
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| Project Period (FY) |
2005 – 2006
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| Project Status |
Completed (Fiscal Year 2006)
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| Budget Amount *help |
¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 2006: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2005: ¥2,600,000 (Direct Cost: ¥2,600,000)
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| Keywords | Thin film / Nano-size / Al film / Cu film / Residual stress / Thermal stress / Thermal cycle test / ストレスマイグレーション / Cu薄膜 / Al薄膜 / 保護膜 |
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| Research Abstract |
A deposition of thin films on a substrate and etching process are a principal method in order to fabricate micro machine or nano machine. A construction of film has been changed from a single-layer film to.a multi-layer film to make a three dimensional machine structure. It has been cleared that a large.scale of residual stresses is formed in these thin film structure and these residual stresses will cause a dimensional change in the structure through fabricating stages. The strength of materials constructing a structure is also important and must be investigated. Stress migration is one of the factors that weaken a film structure in a way that an atomic migration due to stress change in the films control a strength of the film. There is a possibility that nano-size and multi-layer film structure increase the strength of films.
This program investigated a thermal stress behavior in Al films and Cu films deposited on silicon substrates by synchrotron radiation. The main results are as follows:
(1) Thermal stresses in a film, 10, 20 and 50 nm in thickness, deposited on a thermally oxidized silicon film changed in a linear way during thermal cycling from room temperature to 300 deg in C. Al film is strengthened by down sizing to nano-size thickness.
(2) Stresses in a 100 nm thick Cu layer of Cu/A1N multi-layer film behaves non-linear change in the first heating cycle but after that stresses behave in a linear way in cooling and heating stages. Cu films strengthen by constructing a multi-layer structure with AlN film.
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