Quantum state measurements of single photon sources in silicon carbide devices

• Project/Area Number: 17H01056
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Crystal engineering
• Research Institution: National Institutes for Quantum and Radiological Science and Technology
• Principal Investigator: Ohshima Takeshi 国立研究開発法人量子科学技術研究開発機構, 高崎量子応用研究所 先端機能材料研究部, 部長(定常) (50354949)
• Co-Investigator(Kenkyū-buntansha): 波多野 睦子 東京工業大学, 工学院, 教授 (00417007) ; 藤ノ木 享英 (梅田享英) 筑波大学, 数理物質系, 准教授 (10361354) ; 土方 泰斗 埼玉大学, 理工学研究科, 准教授 (70322021)
• Project Period (FY): 2017-04-01 – 2020-03-31
• Project Status: Completed (Fiscal Year 2019)
• Budget Amount: ¥43,940,000 (Direct Cost: ¥33,800,000、Indirect Cost: ¥10,140,000); Fiscal Year 2019: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000); Fiscal Year 2018: ¥12,740,000 (Direct Cost: ¥9,800,000、Indirect Cost: ¥2,940,000); Fiscal Year 2017: ¥20,800,000 (Direct Cost: ¥16,000,000、Indirect Cost: ¥4,800,000)
• Keywords: 量子センシング / 結晶工学 / 格子欠陥 / 半導体物性 / 光物性 / 放射線 / 量子エレクトロニクス

Outline of Final Research Achievements

In order to clarify the optical and spin properties of single photon sources (SPSs) in silicon carbide (SiC), and also to develop manipulation methods for those properties, a) we developed the position selective introduction method of SPSs in SiC devices and demonstrated magnetic field sensing using optically detected magnetic resonance (ODMR) in which spin manipulation is performed. b) We established basic technology on the quantum manipulation for SPSs such as spin and optical properties using operation of electronic device such as applying bias and injection of current. c) We obtained the information on the fabrication process of Nitrogen-vacancy center (NcVsi) and surface SPS of which atomic structure have not yet been identified, and also revealed the quantum properties of those SPSs.

Academic Significance and Societal Importance of the Research Achievements

量子コンピューティング、量子暗号通信技術や量子センシングといった量子技術の実用化には、安定・確実に動作する演算子（量子ビット）や量子センサの開発が不可欠である。本研究では、結晶成長技術やデバイス作製技術が確立しつつある炭化ケイ素（SiC）半導体に着目し、SiCを母材とした単一光子源（SPS）に関する研究を推進した。イオン照射技術等を駆使することで位置制御可能なSPS形成技術を開発したこと、形成したSPSのスピンや光学特性を明らかにしたこと、更には、SPSをSiCデバイス中に導入し、デバイス動作によるSPSの量子状態制御を実証したことは、将来の量子デバイスの開発に向けて大いに意義がある。

Research Products

• [Int'l Joint Research] University of Melbourne/RMIT University(オーストラリア)
• [Int'l Joint Research] University of Wurzburg/University of Stuttgart(ドイツ)
• [Int'l Joint Research] Linkoping University(スウェーデン)
• [Int'l Joint Research] University of Chicago(米国)
• [Int'l Joint Research] University of Wurzburg/University of Stuttgart(ドイツ)
• [Int'l Joint Research] University of Melbourne/RMIT University(オーストラリア)
• [Int'l Joint Research] Linkoping University(スウェーデン)
• [Int'l Joint Research] University of Chicago(米国)
• [Int'l Joint Research] University of Wurzburg/University of Stuttgart(Germany)
• [Int'l Joint Research] University of Melbourne/RMIT University(Australia)
• [Int'l Joint Research] Linkoping University(スウェーデン)
• [Int'l Joint Research] University of Chicago/Stanford University(米国)
• [Journal Article] Influence of Irradiation on Defect Spin Coherence in Silicon Carbide (2020)
  • Author(s): C. Kasper, D. Klenkert, Z. Shang, D. Simin, A. Gottscholl, A. Sperlich, H. Kraus, C. Schneider, S. Zhou, M. Trupke, W. Kada, T. Ohshima, V. Dyakonov, G. V. Astakhov
  • Journal Title: Physical Review Applied Volume: 13 Pages: 1-11
  • DOI: 10.1103/physrevapplied.13.044054
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Electrical and optical control of single spins integrated in scalable semiconductor devices (2019)
  • Author(s): C. P. Anderson, A. Bourassa, K. C. Miao, G. Wolfowicz, P. J. Mintun, A. L. Crook, H. Abe, J. U. Hassan, N. T. Son, T. Ohshima, D. D. Awschalom
  • Journal Title: Science Volume: 366 Pages: 1225-1230
  • DOI: 10.1126/science.aax9406
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Coherent electrical readout of defect spins in silicon carbide by photo-ionization at ambient conditions (2019)
  • Author(s): M. Niethammer, M. Widmann, T. Rendler, N. Morioka, Y-C. Chen, R. Stohr, J. U. Hassan, S. Onoda, T. Ohshima, S-Y. Lee, A. Mukherjee, J. Isoya, N. T. Son, Jorg Wrachtrup
  • Journal Title: Nature Communications Volume: 10 Pages: 1-8
  • DOI: 10.1038/s41467-019-13545-z
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Electrically driven optical interferometry with spins in silicon carbide (2019)
  • Author(s): K. C. Miao, A. Bourassa, C. P. Anderson, S. J. Whiteley, A. L. Crook, S. L. Bayliss, G. Wolfowicz, G. Thiering, P. Udvarhelyi, V. Ivady, H. Abe, T. Ohshima, A. Gali, D. D. Awschalom
  • Journal Title: Science Advances Volume: 5 Pages: 1-7
  • DOI: 10.1126/sciadv.aay0527
  • Peer Reviewed
• [Journal Article] Electrical Charge State Manipulation of Single Silicon Vacancies in a Silicon Carbide Quantum Optoelectronic Devic (2019)
  • Author(s): M. Widmann, M. Niethammer, D. Y. Fedyanin, I. A. Khramtsov, T. Rendler, I. D. Booker, J. U Hassan, N. Morioka, Y.-C. Chen, I. G. Ivanov, N. T. Son, T. Ohshima, M. Bockstedte, A. Gali, C. Bonato, S.-Y. Lee, J. Wrachtrup
  • Journal Title: Nano Letters Volume: 19 Pages: 7173-7180
  • DOI: 10.1021/acs.nanolett.9b02774
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Formation of nitrogen-vacancy centers in 4H-SiC and their near infrared photoluminescence properties (2019)
  • Author(s): S.-i. Sato, T. Narahara, Y. Abe, Y. Hijikata, T. Umeda, T. Ohshima
  • Journal Title: Journal of Applied Physics Volume: 126 Pages: 083105-083105
  • DOI: 10.1063/1.5099327
  • NAID: 120007132685
  • Peer Reviewed
• [Journal Article] Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing (2019)
  • Author(s): Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Satoh, K. Kojima, S.-Y. Lee, Y. Hijikata, T. Ohshima
  • Journal Title: Mater. Sci. Forum Volume: 963 Pages: 709-713
  • DOI: 10.4028/www.scientific.net/msf.963.709
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Energy levels and charge state control of the carbon antisite-vacancy defect in 4H-SiC (2019)
  • Author(s): N. T. Son, P. Stenberg, V. Jokubavicius, H. Abe, T. Ohshima, J. U. Hassan, I. G. Ivanov
  • Journal Title: Applied Physics Letters Volume: 114 Pages: 212105-212105
  • DOI: 10.1063/1.5098070
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide (2019)
  • Author(s): Nagy Roland、Niethammer Matthias、Widmann Matthias、Chen Yu-Chen、Udvarhelyi P?ter、Bonato Cristian、Hassan Jawad Ul、Karhu Robin、Ivanov Ivan G.、Son Nguyen Tien、Maze Jeronimo R.、Ohshima Takeshi、Soykal ?ney O.、Gali ?d?m、Lee Sang-Yun、Kaiser Florian、Wrachtrup J?rg
  • Journal Title: Nature Communications Volume: 10
  • DOI: 10.1038/s41467-019-09873-9
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Identification of divacancy and silicon vacancy qubits in 6H-SiC (2019)
  • Author(s): J. Davidsson, V. Ivady, R. Armiento, T. Ohshima, N. T. Son, A. Gali, I. A. Abrikosov
  • Journal Title: Applied Physics Letters Volume: 114 Pages: 112107-112111
  • DOI: 10.1063/1.5083031
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Ligand hyperfine interactions at silicon vacancies in 4H-SiC (2019)
  • Author(s): N. T. Son, P. Stenberg, V. Jokubavicius, T. Ohshima, J. U. Hassan, I. G Ivanov
  • Journal Title: J. Phys.: Condens. Matter Volume: 31
  • DOI: 10.1088/1361-648x/ab072b
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] First-Principles Study of Oxygen-Related Defects on 4H-SiC Surface: The Effects of Surface Amorphous Structure (2019)
  • Author(s): Y. Matsushita, Y. Furukawa, Y. Hijikata, T. Ohshima
  • Journal Title: Applied Surface Science Volume: 464 Pages: 451-454
  • DOI: 10.1016/j.apsusc.2018.09.072
  • Peer Reviewed
• [Journal Article] Oxygen-incorporated single-photon sources observed at the surface of silicon carbide crystals (2018)
  • Author(s): Y. Hijikata, T. Horii, Y. Furukawa, Y. Matsushita, T. Ohshima
  • Journal Title: Journal of Physics Communications Volume: 2 Pages: 111003-111003
  • DOI: 10.1088/2399-6528/aaede4
  • Peer Reviewed / Open Access
• [Journal Article] Excitation properties of the divacancy in 4H-SiC (2018)
  • Author(s): B. Magnusson, N. T. Son, A. Csore, A. Gallstrom, T. Ohshima, A. Gali, I. G. Ivanov
  • Journal Title: Phys. Rev. B Volume: 98
  • DOI: 10.1103/physrevb.98.195202
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Electrically controllable position-controlled color centers created in SiC pn junction diode by proton beam writing (2018)
  • Author(s): Y. Yamazaki, Y. Chiba, T. Makino, S. -I. Sato, N. Yamada, T. Satoh, Y. Hijikata, K. Kojima, S.-Y. Lee, T. Ohshima
  • Journal Title: Journal of Materials Research Volume: 33 Pages: 3355-3361
  • DOI: 10.1557/jmr.2018.302
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Creation of Silicon Vacancy in Silicon Carbide by Proton Beam Writing toward Quantum Sensing Applications (2018)
  • Author(s): T. Ohshima, T. Satoh, H. Kraus, G. V. Astakhov, V. Dyakonov, P. G. Baranov
  • Journal Title: J. Phys. D: Appl. Phys. Volume: 51
  • DOI: 10.1088/1361-6463/aad0ec
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface (2018)
  • Author(s): S.-i. Sato, T. Honda, T. Makino, Y. Hijikata, S.-Y. Lee, T. Ohshima
  • Journal Title: ACS Photonics Volume: 5 Pages: 3159-3165
  • DOI: 10.1021/acsphotonics.8b00375
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Various Single Photon Sources Observed in SiC pin Diodes (2018)
  • Author(s): H. Tsunemi, T. Honda, T. Makino, S. Onoda, S.-I. Sato, Y. Hijikata, T. Ohshima
  • Journal Title: Materials Science Forum Volume: 924 Pages: 204-207
  • DOI: 10.4028/www.scientific.net/msf.924.204
  • Peer Reviewed
• [Journal Article] Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs (2018)
  • Author(s): Y. Abe, T. Umeda, M. Okamoto, S. Onoda, M. Haruyama, W. Kada, O. Hanaizumi, R. Kosugi, S. Harada, T. Ohshima
  • Journal Title: Mater. Sci. Forum Volume: 924 Pages: 281-284
  • DOI: 10.4028/www.scientific.net/msf.924.281
  • Peer Reviewed
• [Journal Article] Ab Initio Theory of Si-Vacancy Quantum Bits in 4H and 6H-SiC (2018)
  • Author(s): V. Ivady, J. Davidsson, N. T. Son, T. Ohshima, I. A. Abrikosov, A. Gali
  • Journal Title: Mater. Sci. Forum Volume: 924 Pages: 895-900
  • DOI: 10.4028/www.scientific.net/msf.924.895
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Bright single photon sources in lateral silicon carbide light emitting diodes (2018)
  • Author(s): M. Widmann, M. Niethammer, T. Makino, T. Rendler, S. Lasse, T. Ohshima, J. Ul Hassan, N. T. Son, S.-Y. Lee, J. Wrachtrup
  • Journal Title: Appl. Phys. Lett. Volume: 112
  • DOI: 10.1063/1.5032291
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Highly Efficient Optical Pumping of Spin Defects in Silicon Carbide for Stimulated Microwave Emission (2018)
  • Author(s): M. Fischer, A. Sperlich, H. Kraus, T. Ohshima, G. V. Astakhov, V. Dyakonov
  • Journal Title: Phys. Rev. Appl. Volume: 9
  • DOI: 10.1103/physrevapplied.9.054006
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors (2018)
  • Author(s): Y. Abe, T. Umeda, M. Okamoto, R. Kosugi, S. Harada, M. Haruyama, W. Kada, O. Hanaizumi, S. Onoda, T. Ohshima
  • Journal Title: Applied Physics Letters Volume: 112
  • DOI: 10.1063/1.4994241
  • NAID: 120007133812
  • Peer Reviewed
• [Journal Article] Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide (2018)
  • Author(s): R. Nagy, M. Widmann, M. Niethammer, D. B.R. Dasari, I. Gerhardt, O. O. Soykal, M. Radulaski, T. Ohshima, J. Vuckovic, N. T. Son, I. G. Ivanov, S. E. Economou, C. Bonato, S.-Y. Lee, J. Wrachtrup
  • Journal Title: Phys. Rev. Applied Volume: 9
  • DOI: 10.1103/physrevapplied.9.034022
  • Peer Reviewed
• [Journal Article] Stark tuning and electrical charge state control of single divacancies in silicon carbide (2017)
  • Author(s): C. F. de las Casas, D. J. Christle, J. Ul Hassan, T. Ohshima, N. T. Son, D. D. Awschalom
  • Journal Title: Appl. Phys. Lett. Volume: 111
  • DOI: 10.1063/1.5004174
  • Peer Reviewed
• [Journal Article] Identification of Si-vacancy related room-temperature qubits in 4H silicon carbide (2017)
  • Author(s): V. Ivady, J. Davidsson, N. T. Son, T. Ohshima, I. A. Abrikosov, A. Gali
  • Journal Title: Phys. Rev. B Volume: 96
  • DOI: 10.1103/physrevb.96.161114
  • Peer Reviewed
• [Presentation] SiC デバイス内に作製したシリコン空孔の光・電気同時励起時における光学特性 (2019)
  • Author(s): 山﨑 雄一, 千葉 陽史, 佐藤 真一郎, 牧野 高紘, 山田 尚人, 佐藤 隆博, 土方 泰斗, 児嶋 一聡, 土田 秀一, 星乃 紀博, 大島 武
  • Organizer: 応用物理学会 先進パワー半導体分科会 第6回講演会
• [Presentation] SiC結晶中シリコン空孔の光検出磁気共鳴信号にアニール温度が及ぼす影響 (2019)
  • Author(s): 千葉 陽史, 山﨑 雄一, 牧野 高紘, 佐藤 真一郎, 山田 尚人, 佐藤 隆博, 土方 泰斗, 大島 武
  • Organizer: 応用物理学会 先進パワー半導体分科会 第6回講演会
• [Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成量と窒素不純物濃度の関係 (2019)
  • Author(s): 楢原 拓真，佐藤 真一郎，児島 一聡，山﨑 雄一, 土方 泰斗, 大島 武
  • Organizer: 応用物理学会 先進パワー半導体分科会 第6回講演会
• [Presentation] The effect of γ-ray irradiation on optical properties of single photon sources in 4H- SiC MOSFET (2019)
  • Author(s): Y. Abe, T. Umeda, M. Okamoto, S. Harada, Y. Yamazaki, T. Ohshima
  • Organizer: International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
  • Int'l Joint Research
• [Presentation] Enhancement of ODMR Contrasts of Silicon Vacancy in SiC by Thermal Treatment (2019)
  • Author(s): Y. Chiba, Y. Yamazaki, S.i. Sato, T. Makino, N. Yamada, T. Satoh, Y. Hijikata, T. Ohshima
  • Organizer: International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
  • Int'l Joint Research
• [Presentation] Effects of Nitrogen Impurity Concentration on Nitrogen-Vacancy Center Formation in 4H-SiC (2019)
  • Author(s): T. Narahara, S.-i. Sato, K. Kojima, Y. Yamazaki, Y. Hijikata, T. Ohshima
  • Organizer: International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
  • Int'l Joint Research
• [Presentation] Near Infrared Photoluminescence in High-Purity Semi-Insulating 4H-SiC Irradiated with Energetic Charged Particles (2019)
  • Author(s): S.-i. Sato, T. Narahara, S. Onoda, Y. Yamazaki, Y. Hijikata, B. C. Gibson, A. D. Greentree, T. Ohshima
  • Organizer: International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
  • Int'l Joint Research
• [Presentation] Optically detected magnetic resonance study of 3D arrayed silicon vacancies in SiC pn diodes (2019)
  • Author(s): Y. Yamazaki, Y. Chiba, S.-I. Sato, T. Makino, N. Yamada, T. Satoh, K. Kojima, Y. Hijikata, H. Tsuchida, N. Hoshino, T. Ohshima
  • Organizer: International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM2019)
  • Int'l Joint Research
• [Presentation] SiCデバイス内の3次元配列シリコン空孔を用いた光検出磁場共鳴測定 (2019)
  • Author(s): 山﨑 雄一, 千葉 陽史, 佐藤 真一郎, 牧野 高紘, 山田 尚人, 佐藤 隆博, 土方 泰斗, 児嶋 一聡, 土田 秀一, 星乃 紀博, 大島 武
  • Organizer: 2019年 第80回応用物理学会秋季学術講演会
• [Presentation] SiC結晶中シリコン空孔のODMR信号に熱処理温度が及ぼす影響 (2019)
  • Author(s): 千葉 陽史, 山﨑 雄一, 牧野 高紘, 佐藤 真一郎, 山田 尚人, 佐藤 隆博, 土方 泰斗, 大島 武
  • Organizer: 2019年 第80回応用物理学会秋季学術講演会
• [Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成における窒素不純物濃度の影響 (2019)
  • Author(s): 楢原 拓真, 佐藤 真一郎, 児島 一聡, 山﨑 雄一, 土方 泰斗, 大島 武
  • Organizer: 2019年 第80回応用物理学会秋季学術講演会
• [Presentation] Creation of nitrogen-vacancy centers in SiC by ion irradiation (2019)
  • Author(s): T. Ohshima, S.-i. Sato, T. Narahara, Y. Yamazaki, Y. Abe, T. Umeda, Y. Hijikata
  • Organizer: 30th International Conference on Defects in Semiconductors
  • Int'l Joint Research
• [Presentation] Position-Selective Silicon Vacancy Formation in Silicon Carbide Devices using Proton Beam Writing (2019)
  • Author(s): T. Ohshima, Y. Yamazaki, Y. Chiba, Y. Hijikata, K. Kojima, S.-Y. Lee, W. Kada
  • Organizer: Quantum 2019
  • Int'l Joint Research / Invited
• [Presentation] Creation of silicon vacancy in silicon carbide using proton beam writing techniques for quantum sensing (2019)
  • Author(s): T. Ohshima
  • Organizer: Workshop on Ion beams for future technologies 2019
  • Int'l Joint Research / Invited
• [Presentation] 4H-SiC MOSFETチャネルの単一光子源のゲート電圧制御2 (2019)
  • Author(s): 阿部裕太，梅田享英，岡本光央，原田信介，佐藤真一郎，山﨑雄一，大島武
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] γ線照射が炭化ケイ素表面発光中心の生成・発光特性に与える影響 (2019)
  • Author(s): 山﨑雄一，常見大貴，佐藤真一郎, 土方泰斗，大島武
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] 同位体酸素を用いたSiC 表面に形成される単一光子源の構造推定 (2019)
  • Author(s): 土方泰斗, 松下雄一郎，大島 武
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成におけるイオンビーム照射の影響 (2019)
  • Author(s): 楢原拓真, 佐藤真一郎, 土方泰斗, 大島武
  • Organizer: 第66回応用物理学会春季学術講演会
• [Presentation] Quantum Sensing in 4H-SiC Power Devices (2018)
  • Author(s): Hoang Minh Tuan, Takeshi Ohshima, Makoto Nakajima, Kosuke Mizuno, Yuta Masuyama, Takayuki Iwasaki, Digh Hisamoto, Mutsuko Hatano
  • Organizer: 2018 MRS Fall Meeting and Exhibit, Materials Research Society
  • Int'l Joint Research
• [Presentation] a面およびm面4H-SiC MOSFETにおける単一光子源の探索 (2018)
  • Author(s): 阿部裕太，梅田享英，原田信介，佐藤真一郎，山﨑雄一，大島武
  • Organizer: 応用物理学会 先進パワー半導体分科会 第5回講演会
• [Presentation] プロトンビーム描画により形成したシリコン空孔の光学特性劣化要因に関する研究 (2018)
  • Author(s): 山﨑雄一，千葉陽史，牧野高紘, 佐藤真一郎，山田尚人, 佐藤隆博, 加田 渉, 土方泰斗，児島一聡, S. -Y. Lee, 大島武
  • Organizer: 応用物理学会 先進パワー半導体分科会 第5回講演会
• [Presentation] SiC表面に形成される単一光子源の酸化膜厚依存性 (2018)
  • Author(s): 常見大貴，佐藤真一郎，山﨑雄一，牧野高紘，土方泰斗，大島武
  • Organizer: 応用物理学会 先進パワー半導体分科会 第5回講演会
• [Presentation] プロトンビーム描画により形成されたSiC pnダイオード中シリコン空孔のODMR測定 (2018)
  • Author(s): 千葉陽史，山﨑雄一，牧野高紘，佐藤真一郎，山田尚人, 佐藤隆博，加田渉，児島一聡，土方泰斗，大島 武
  • Organizer: 応用物理学会 先進パワー半導体分科会 第5回講演会
• [Presentation] 4H-SiC中の窒素・空孔複合欠陥の形成と発光特性 (2018)
  • Author(s): 楢原拓真, 佐藤真一郎, 土方泰斗, 大島武
  • Organizer: 応用物理学会 先進パワー半導体分科会 第5回講演会
• [Presentation] プロトンビーム描画プロセスがSiC pnダイオード中に導入したシリコン空孔の光学特性に与える影響 (2018)
  • Author(s): 山﨑雄一，千葉陽史，牧野高紘, 佐藤真一郎，山田尚人, 佐藤隆博, 土方泰斗，児島一聡, S. -Y. Lee, 大島武
  • Organizer: 2018年 第79回応用物理学会秋季学術講演
• [Presentation] SiC p+nn+ダイオード中の単一光子源の発光特性に関する考察 (2018)
  • Author(s): 常見大貴, 佐藤真一郎, 山﨑雄一, 牧野高紘, 土方泰斗, 大島武
  • Organizer: 2018年 第79回応用物理学会秋季学術講演
• [Presentation] プロトンビーム描画を用いてSiCデバイス中に作製したシリコン空孔のODMR測定 (2018)
  • Author(s): 千葉陽史，山﨑雄一，牧野高紘，佐藤真一郎，山田尚人, 佐藤隆博, 児島一聡, 土方泰斗，大島武
  • Organizer: 2018年 第79回応用物理学会秋季学術講演
• [Presentation] Creation of electrically controllable radiation centers in SiC using proton beam writing (2018)
  • Author(s): Y. Chiba, Y. Yamazaki, T. Makino, S.-i. Sato, N. Yamada, T. Sato, K. Kojima, S.-Y. Lee, Y. Hijikata, T. Ohshima
  • Organizer: 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
  • Int'l Joint Research
• [Presentation] Near Infrared Photoluminescence from Nitrogen-Vacancy Centers in Silicon Carbide (2018)
  • Author(s): S.-I. Sato, Y. Abe, T. Umeda, T. Ohshima
  • Organizer: 12th European Conference on Silicon Carbide and Related Materials (ECSCRM2018)
  • Int'l Joint Research
• [Presentation] Creation of silicon vacancy in silicon carbide device by proton beam writing toward quantum applications (2018)
  • Author(s): Takeshi Ohshima, Yuichi Yamazaki, Yuji Chiba, Naoto Yamada, Shin-ichiro Sato, Takahiro Satoh, Yasuto Hijikata, Sang-Yun Lee, Kazutoshi Kojima
  • Organizer: 25th International Conference on Application of Accelerators in Research and Industry (CAARI2018)
  • Int'l Joint Research / Invited
• [Presentation] Position-selective introduction of electrically excitable color centers in SiC pn junction diode by proton beam writing (2018)
  • Author(s): Y. Yamazaki, Y. Chiba, T. Makino, S. -i. Sato, N. Yamada, T. Satoh, Y. Hijikata, K. Kojima, S. Y. Lee, T. Ohshima
  • Organizer: 16th International Conference on Nuclear Microprobe Technology and Applications (ICNMTA2018)
  • Int'l Joint Research
• [Presentation] Radiation Efficiency Enhancement of Single Photon Source near Stacking Fault in 4H-SiC Epilayer (2018)
  • Author(s): Y. Hijikata, Y. Furukawa, Y. -i. Matsushita, T. Ohshima
  • Organizer: 2018 E-MRS Spring meeting and Exhibit
  • Int'l Joint Research
• [Presentation] プロトンビーム描画を用いたSiC pinダイオード中への発光中心の形成 (2018)
  • Author(s): 千葉陽史, 常見大貴, 本多智也, 牧野高紘, 佐藤真一郎, 山田尚人, 佐藤隆博, 土方泰斗, 大島武
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] 4H-SiCエピ層中の積層欠陥近傍における単一光子源の発光効率向上 (2018)
  • Author(s): 赤堀周平、古川頼誉、松下雄一郎、大島武、土方泰斗
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] Magnetic Field Sensing with Silicon Vacancy in 4H-SiC Under Ambient Conditions (2018)
  • Author(s): Hoang Minh Tuan, Takeshi Ohshima, Yuta Masuyama, Takayuki Iwasaki, Digh Hisamoto, Mutsuko Hatano
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] 4H-SiC酸化によるアモルファス構造が表面単一光子光源に与える影響の理論的分析 (2018)
  • Author(s): 古川頼誉, 土方泰斗, 大島武, 松下雄一郎
  • Organizer: 第65回応用物理学会春季学術講演会
• [Presentation] Functionalization of Silicon Carbide by Particle Irradiation toward Quantum Devices (2017)
  • Author(s): T. Ohshima, T. Honda, H. Tsunemi, T. Makino, S. Sato, S. Onoda, Y. Hijikata
  • Organizer: 2017 MRS Fall Meeting and Exhibit
  • Int'l Joint Research / Invited
• [Presentation] Radiation Response of Silicon Carbide Devices - Degradation and Functionalization - (2017)
  • Author(s): T. Ohshima
  • Organizer: Workshop on Ultra-Precision Processing for Wide Bandgap Semiconductors 2017
  • Int'l Joint Research / Invited
• [Presentation] SiC p+nn+ダイオード表面に形成される単一光子源の発光特性 (2017)
  • Author(s): 常見大貴, 本多智也, 佐藤真一郎, 小野田忍, 牧野高紘, 土方泰斗, 大島武
  • Organizer: 先進パワー半導体分科会 第4回講演会
• [Presentation] バイアス印加によるSiCダイオード中の発光中心の発光強度変化 (2017)
  • Author(s): 本多智也, 常見大貴, 小野田忍, 佐藤真一郎, 牧野高紘, 土方泰斗, 大島武
  • Organizer: 先進パワー半導体分科会 第4回講演会
• [Presentation] 4H-SiC 中の積層欠陥が単一光子光源の発光波長に及ぼす影響の理論的分析 (2017)
  • Author(s): 古川頼誉，土方泰斗，大島武，松下雄一郎
  • Organizer: 先進パワー半導体分科会 第4回講演会
• [Presentation] Oxidation-process dependence of Single photon sources embedded in 4H-SiC MOSFETs (2017)
  • Author(s): Y. Abe, M. Okamoto, S. Onoda, T. Ohshima, M. Haruyama, W. Kada, O. Hanaizumi, R. Kosugi, S. Harada, Y. Kagoyama, T. Umeda
  • Organizer: International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
  • Int'l Joint Research
• [Presentation] Coherent defect engineering with varying irradiation methods (2017)
  • Author(s): C. Kasper, D. Simin, H. Kraus, W. Kada, T. Ohshima, A. Sperlich, C. Salter, M. Trupke, V. Dyakonov, G. V. Astakhov
  • Organizer: International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
  • Int'l Joint Research
• [Presentation] Controlled 3D Placement of Vacancy Spins for Quantum Applications in Silicon Carbide (2017)
  • Author(s): H. Kraus, D. Simin, C. Kasper, W. Kada, Y. Hijikata, C. Cochrane, T. Ohshima, V. Dyakonov, G. V. Astakhov
  • Organizer: International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
  • Int'l Joint Research
• [Presentation] Enhanced single photon emission near stacking fault in 4H-SiC epilayer (2017)
  • Author(s): Y. Hijikata, S. Akahori, T. Ohshima
  • Organizer: International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
  • Int'l Joint Research
• [Presentation] Various single photon sources observed in SiC pin diodes (2017)
  • Author(s): H. Tsunemi, T. Honda, T. Makino, S. Onoda, S-I. Sato, Y. Hijikata, T. Ohshima
  • Organizer: International Conference on Silicon Carbide and Related Materials (ICSCRM2017)
  • Int'l Joint Research
• [Presentation] 4H-SiC MOSFETチャネルの単一光子源のゲート電圧制御 (2017)
  • Author(s): 梅田亨英, 阿部裕太, 岡本光央, 原田信介, 春山盛善, 加田渉, 花泉修, 小野田忍, 大島武
  • Organizer: 2017年 第78回応用物理学会秋季学術講演
• [Presentation] 4H-SiC MOSFETチャネル中の単一光子源に対する水素の影響 (2017)
  • Author(s): 阿部裕太, 岡本光央, 小野田忍, 大島武, 春山盛善, 加田渉, 花泉修, 原田信介, 鹿児山陽平, 梅田亨英
  • Organizer: 2017年第78回応用物理学会秋季学術講演会
• [Presentation] SiC p+nn+ダイオード中の発光中心のバイアス電圧による発光強度変化 (2017)
  • Author(s): 本多智也, 常見大貴, 児島一聡, 佐藤真一郎, 牧野高紘, 小野田忍, 土方泰斗, 大島武
  • Organizer: 2017年 第78回応用物理学会秋季学術講演会
• [Presentation] 4H-SiCエピ層における積層欠陥近傍の単一光子源の発光特性 (2017)
  • Author(s): 赤堀周平、古川頼誉、松下雄一郎、大島武、土方泰斗
  • Organizer: 2017年 第78回応用物理学会秋季学術講演会
• [Presentation] SiC p+nn+ダイオードに形成される単一光子源の発光スペクトル (2017)
  • Author(s): 常見大貴，本多智也，牧野高紘，小野田忍，佐藤真一郎，土方泰斗，大島武
  • Organizer: 2017年 第78回応用物理学会秋季学術講演会
• [Presentation] Observation of Single Photon Sources in Silicon Carbide PiN Diodes (2017)
  • Author(s): T. Ohshima, T. Honda, H. Tsunemi, T. Makino, S. Sato, S. Onoda, Y. Hijikata, B. C. Johnson, J. R. Klein, A. Lohrmann, J. C. McCaiium
  • Organizer: International Union of Materials Research Societies, The 15th International Conference on Advanced Materials (IUMRS-ICAM2017)
  • Int'l Joint Research
• [Remarks] 量子科学技術研究開発機構 高崎量子応用研究所 プロジェクト「半導体照射効果研究」
  • URL: https://www.qst.go.jp/site/semiconductor/
• [Remarks] 量子科学技術研究開発機構 高崎量子応用研究所 プロジェクト「半導体照射効果研究」
  • URL: http://www.taka.qst.go.jp/eimr_div/RadEffects/index_j.html