| Budget Amount *help |
¥17,550,000 (Direct Cost: ¥13,500,000、Indirect Cost: ¥4,050,000)
Fiscal Year 2019: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2018: ¥5,720,000 (Direct Cost: ¥4,400,000、Indirect Cost: ¥1,320,000)
Fiscal Year 2017: ¥6,110,000 (Direct Cost: ¥4,700,000、Indirect Cost: ¥1,410,000)
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| Outline of Final Research Achievements |
Measuring the Hall effect in doped inorganic single crystals is a standard technique to separately and simultaneously determine the carrier concentration per unit volume (N, cm-3) and the mobility (μ). However, these measurements have not yet been conducted on bulk-doped organic single crystals. Here, we measure the Hall effect in bulk-doped single-crystal organic semiconductors. This approach enables us to investigate the doping effects and dopant-induced structural disorder. High ionization rates and scattering effects from lattice disturbances, which were peculiar for organic single crystals, were observed. The present results can be regarded as a breakthrough in the field of organic semiconductor physics, which allows the text book interpretation based on solid-state physics.
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