Low-loss vertical-type diamond power MOSFET
| Project/Area Number |
17H02786
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Thin film/Surface and interfacial physical properties
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| Research Institution | Kanazawa University |
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Principal Investigator |
Tokuda Norio 金沢大学, ナノマテリアル研究所, 教授 (80462860)
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| Co-Investigator(Kenkyū-buntansha) |
加藤 宙光 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員 (00415655)
大曲 新矢 国立研究開発法人産業技術総合研究所, エネルギー・環境領域, 主任研究員 (40712211)
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| Project Period (FY) |
2017-04-01 – 2020-03-31
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| Project Status |
Completed (Fiscal Year 2019)
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| Budget Amount *help |
¥18,070,000 (Direct Cost: ¥13,900,000、Indirect Cost: ¥4,170,000)
Fiscal Year 2019: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2018: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2017: ¥9,490,000 (Direct Cost: ¥7,300,000、Indirect Cost: ¥2,190,000)
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| Keywords | 表面・界面物性 / ダイヤモンド |
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| Outline of Final Research Achievements |
Diamond is a semiconductor material expected to realize the highest energy-saving effect as a power device used in various fields. In this study, we obtained the following three results: (1) development of V-shaped and U-shaped trench structure formation process using solid solution reaction of carbon for fabrication of vertical diamond MOSFET structure, (2) a quantitative evaluation of interface state density at Al2O3/diamond interfaces which cause low channel mobility in diamond MOSFETs, (3) development of a reduction process of the interface state density.
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| Academic Significance and Societal Importance of the Research Achievements |
本研究成果は、主にダイヤモンド、広くは炭素に関するマテリアルサイエンスの発展、そしてデバイス応用が期待される。ダイヤモンドはパワーデバイスだけでなく、量子デバイス/センサ応用も期待されており、ダイヤモンドを用いたパワー・量子デバイスの実用化により、次世代ダイヤモンドエレクトロニクス及びその産業の創出、そして省エネ・低炭素社会及びSociety 5.0の実現への貢献が期待される。
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Report
(4 results)
Research Products
(38 results)
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[Journal Article] Direct observation of inversion capacitance in p-type diamond MOS capacitors with an electron injection layer2018
Author(s)
T. Matsumoto, H. Kato, T. Makino, M. Ogura, D. Takeuchi, S. Yamasaki, M. Imura, A. Ueda, T. Inokuma, and N. Tokuda
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Journal Title
Japanese Journal of Applied Physics
Volume: 57
Issue: 4S
Pages: 04FR01-04FR01
DOI
NAID
ISSN
0021-4922, 1347-4065
Related Report
Peer Reviewed / Int'l Joint Research
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