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Synaptic platform for neuromorphic computing developed by functional defect engineering in memristive devices

Research Project

Project/Area Number 17H03236
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Electronic materials/Electric materials
Research InstitutionOsaka University

Principal Investigator

Sakai Akira  大阪大学, 基礎工学研究科, 教授 (20314031)

Project Period (FY) 2017-04-01 – 2020-03-31
Project Status Completed (Fiscal Year 2019)
Budget Amount *help
¥18,590,000 (Direct Cost: ¥14,300,000、Indirect Cost: ¥4,290,000)
Fiscal Year 2019: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2018: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2017: ¥15,730,000 (Direct Cost: ¥12,100,000、Indirect Cost: ¥3,630,000)
Keywordsメモリスタ / シナプス / 金属酸化物結晶 / 酸素空孔 / 転位 / エピタキシャル薄膜 / パルスレーザー蒸着 / 走査透過電子顕微鏡 / 酸化物 / 薄膜 / レーザー蒸着 / 透過電子顕微鏡 / 酸化物結晶
Outline of Final Research Achievements

A brain-inspired computer consisting of artificial synapses is inevitable for next generation high speed and low power consumption computing. In this research, we focus on functional defects, such as oxygen vacancies and dislocations, in crystalline metal-oxide memristive materials. On the basis of designing atomic and electronic structures of the defects and improving conventional memristive device architectures into multi-terminal configurations, we develop resistive switching memory devices with highly ordered two-dimensional dislocation networks, demonstrate synaptic functions of four terminal memristive devices, and elucidate electronic structures of resistance change regions in the devices. The obtained outcomes allow us to reach the realization of the synaptic platform where the artificial synapses can exert high order neuromorphic functions similarly to living synapses in brains.

Academic Significance and Societal Importance of the Research Achievements

本研究では、より多機能・高性能な脳型コンピュータを実現するために、メモリスタ結晶素子における酸素空孔や転位等の格子欠陥に着目し、4端子構造をベースにしたシナプティックプラットフォームを創製した。高配向2次元転位網の形成や酸素空孔分布の2次元面内制御を通して、酸化物メモリスタ結晶の抵抗変化に関わる転位の影響や、酸素空孔のドリフト機構と電子構造の相関等、学術的に意義深い物理学的知見が獲得された。また、本研究で提唱した4端子構造は、シナプスの自己回帰的な重み操作等、今後、より高度なニューラルネットワークをハードウェア的に実現していくうえで、産業戦略的にも意義深い。

Report

(4 results)
  • 2019 Annual Research Report   Final Research Report ( PDF )
  • 2018 Annual Research Report
  • 2017 Annual Research Report
  • Research Products

    (20 results)

All 2019 2018 2017

All Journal Article (3 results) (of which Peer Reviewed: 3 results,  Open Access: 2 results) Presentation (16 results) (of which Int'l Joint Research: 8 results,  Invited: 1 results) Patent(Industrial Property Rights) (1 results)

  • [Journal Article] Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2-x Memristive Devices2019

    • Author(s)
      Z. Nagata, T. Shimizu, T. Isaka, T. Tohei*, N. Ikarashi, A. Sakai*
    • Journal Title

      Scientific Reports

      Volume: 9 Issue: 1

    • DOI

      10.1038/s41598-019-46192-x

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Demonstrative operation of four-terminal memristive devices fabricated on reduced TiO2 single crystals2019

    • Author(s)
      Takeuchi Shotaro、Shimizu Takuma、Isaka Tsuyoshi、Tohei Tetsuya、Ikarashi Nobuyuki、Sakai Akira
    • Journal Title

      Scientific Reports

      Volume: 9 Issue: 1

    • DOI

      10.1038/s41598-018-38347-z

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Open Access
  • [Journal Article] Analysis of Ti valence states in resistive switching regions of a rutile TiO2-x four-terminal memristive device2018

    • Author(s)
      Yamaguchi Kengo、Takeuchi Shotaro、Tohei Tetsuya、Ikarashi Nobuyuki、Sakai Akira
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57 Issue: 6S3 Pages: 06KB02-06KB02

    • DOI

      10.7567/jjap.57.06kb02

    • NAID

      210000149225

    • Related Report
      2018 Annual Research Report 2017 Annual Research Report
    • Peer Reviewed
  • [Presentation] Oxygen vacancy distribution control for resistive switching of epitaxial TiO2-x thin films in four-terminal memristive devices2019

    • Author(s)
      Miyake Ryotaro、Nagata Zenya、Tohei Tetsuya、Sakai Akira
    • Organizer
      2019 International Conference on Solid State Devices and Materials(SSDM2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Atomic and electronic structure analysis of resistive switching regions in rutile TiO2-x based four-terminal memristive devices2019

    • Author(s)
      Isaka Tsuyoshi、Tohei Tetsuya、Shimizu Takuma、Takeuchi Shotaro、Ikarashi Nobuyuki、Sakai Akira
    • Organizer
      International Conference on Materials and Systems for Sustainability 2019(ICMaSS 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Fabrication of GaOx Based Crossbar Array Memristive Devices and Their Resistive Switching Properties2019

    • Author(s)
      Joko Mamoru、Hayashi Yusuke、Tohei Tetsuya、Sakai Akira
    • Organizer
      2019 International Workshop on Dielectric Thin Films for future electron devices -science and technology-(IWDTF 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 4端子TiO2-x薄膜メモリスタ素子によるシナプス特性の実装2019

    • Author(s)
      三宅亮太郎、林侑介、藤平哲也、酒井朗
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] GaOxを用いたクロスバーアレイメモリスタの開発と抵抗変化特性2019

    • Author(s)
      上甲守治、林侑介、藤平哲也、酒井朗
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 4端子平面型TiO2-xメモリスタ素子におけるパブロフ型条件付けの実装2019

    • Author(s)
      三宅亮太郎、林侑介、藤平哲也、酒井朗
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] ドナー密度分布制御型メモリスタ素子における抵抗変化機構の有限要素法シミュレーション2019

    • Author(s)
      永田善也,藤平哲也,酒井朗
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] TiO2-xエピタキシャル薄膜を用いた4端子メモリスタ素子の抵抗変化特性2019

    • Author(s)
      三宅亮太郎,藤平哲也,酒井朗
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Demonstrative operation of four-terminal memristive devices by controlling oxygen vacancy distribution in TiO2-x single crystals2018

    • Author(s)
      Akira Sakai, Takuma Shimizu, Masato Shimotani, Shotaro Takeuchi, Tetsuya Tohei
    • Organizer
      2018 MRS Spring Meeting
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Gate-tuning of synaptic functions based on the oxygen vacancy distribution control in four-terminal TiO2-x memristive devices2018

    • Author(s)
      Zenya Nagata, Takuma Shimizu, Tsuyoshi Isaka, Tetsuya Tohei, Akira Sakai
    • Organizer
      2018 International Conference on Solid State Devices and Materials (SSDM2018)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] FIBおよびイオンミリング試料作製法による酸化チタン単結晶メモリスタの微細構造解析2018

    • Author(s)
      藤平哲也,山口賢吾,村上弘弥,竹内正太郎,酒井朗
    • Organizer
      大阪大学ナノテクノロジー設備供用拠点 微細構造解析プラットフォーム地域セミナー
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] TEM Microstructure Analysis of Resistive Switching Regions in Rutile TiO2 Single Crystal Memristors2017

    • Author(s)
      Tohei Tetsuya, Murakami Hiroya, Yamaguchi Kengo, Shimizu Takuma, Takeuchi Shotaro, Sakai Akira
    • Organizer
      The 3rd East-Asia Microscopy Conference (EAMC3)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Analysis of Ti valence state in resistive switching region of rutile TiO2-x four-terminal memristive device2017

    • Author(s)
      Yamaguchi Kengo, Takeucni Shotaro, Tohei Tetsuya, Ikarashi Nobuyuki, Sakai Akira
    • Organizer
      2017 International Workshop on DIELECTRIC THIN FILMS FOR FUTURE ELECTRON DEVICES -SCIENCE AND TECHNOLOGY-
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Valence state analysis of Ti in resistive switching region of rutile TiO2-x single crystals memristor2017

    • Author(s)
      Yamaguchi Kengo, Takeuchi Shotaro, Shimizu Takuma, Tohei Tetsuya, Ikarasi Nobuyuki, Sakai Akira
    • Organizer
      International Conference on Materials and Systems for Sustainability 2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] ルチル型TiO2単結晶メモリスタ微細素子における抵抗変化領域の結晶構造解析2017

    • Author(s)
      山口賢吾,村上弘弥,清水拓磨,竹内正太郎,藤平哲也,酒井朗
    • Organizer
      第78回応用物理学会秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] ルチル型TiO2単結晶メモリスタ微細素子における抵抗変化領域の結晶構造解析2017

    • Author(s)
      村上弘弥,山口賢吾,清水拓磨,竹内正太郎,酒井朗
    • Organizer
      日本電子顕微鏡学会第73回学術講演会
    • Related Report
      2017 Annual Research Report
  • [Patent(Industrial Property Rights)] メモリスタおよびそれを備えたアレイシステム2019

    • Inventor(s)
      林侑介、藤平哲也、酒井朗
    • Industrial Property Rights Holder
      大阪大学
    • Industrial Property Rights Type
      特許
    • Filing Date
      2019
    • Related Report
      2019 Annual Research Report

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Published: 2017-04-28   Modified: 2021-02-19  

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