| Budget Amount *help |
¥24,050,000 (Direct Cost: ¥18,500,000、Indirect Cost: ¥5,550,000)
Fiscal Year 2019: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2018: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
Fiscal Year 2017: ¥10,400,000 (Direct Cost: ¥8,000,000、Indirect Cost: ¥2,400,000)
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| Outline of Final Research Achievements |
In order to reduce the cost of III-V compound semiconductor solar cells, which can realize a very high efficiency, the basic study for an infrared laser lift off (IR-LLO) process has been carried out. The strain-balance multiple quantum wells (MQWs) consist of InGaAs well and InGaP barrier can selectively absorb infrared photon corresponding to 1.25 eV of effective bandgap energy. By applying the MQWs as a release layer, an epitaxially grown GaAs photovoltaic (PV) device via MQWs on the GaAs substrate was transferred to the support substrate. The illumination test of pulse laser (1064 nm) on the MQWs layer grown on GaAs indicated the selective ablation of MQW is possible with controlled laser power density. Finally, the PV layer separation and transfer was demonstrated by the IR-LLO method was demonstrated for mm size of small samples.
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