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Precise structure control of 3-dimensional integration CMOS using high mobility materials through layer transfer

Research Project

Project/Area Number 17H06148
Research Category

Grant-in-Aid for Scientific Research (S)

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionThe University of Tokyo

Principal Investigator

Takagi Shinichi  東京大学, 大学院工学系研究科(工学部), 教授 (30372402)

Co-Investigator(Kenkyū-buntansha) 前田 辰郎  国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究主幹 (40357984)
入沢 寿史  国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 主任研究員 (40759940)
Project Period (FY) 2017-05-31 – 2022-03-31
Project Status Completed (Fiscal Year 2021)
Budget Amount *help
¥206,570,000 (Direct Cost: ¥158,900,000、Indirect Cost: ¥47,670,000)
Fiscal Year 2021: ¥33,540,000 (Direct Cost: ¥25,800,000、Indirect Cost: ¥7,740,000)
Fiscal Year 2020: ¥32,240,000 (Direct Cost: ¥24,800,000、Indirect Cost: ¥7,440,000)
Fiscal Year 2019: ¥34,710,000 (Direct Cost: ¥26,700,000、Indirect Cost: ¥8,010,000)
Fiscal Year 2018: ¥39,910,000 (Direct Cost: ¥30,700,000、Indirect Cost: ¥9,210,000)
Fiscal Year 2017: ¥66,170,000 (Direct Cost: ¥50,900,000、Indirect Cost: ¥15,270,000)
KeywordsMOSFET / ゲルマニウム / III-V族化合物半導体 / 3次元集積 / 移動度 / 結晶ひずみ / Ge / III-V / III-V族半導体 / III-V半導体
Outline of Final Research Achievements

High-quality III-V-OI and GOI structures were formed on Si substrates using smart cut, epitaxial lift-off, and oxidation concentration methods, and ultra-thin III-V-OI nMOSFETs and GOI nMOSFETs/pMOSFETs with the thickness of 10 nm or less were realized by digital etching. The world's highest mobility was achieved by optimizing strain, surface orientation, and so on. We also proposed a low-resistance metal source-drain formation and its evaluation method, MOS interface control technologies to realize low interface defect densities. As a result, we established fundamental technologies for fabricating III-V/Ge 3-D stacked CMOS on Si substrates.

Academic Significance and Societal Importance of the Research Achievements

継続的CMOSスケーリングとSi基板上の異種材料集積を用いたLSIシステムを可能にする、Si基板上のIII-V半導体やGe薄膜形成技術、高品質MOSFET作製技術を提供した。また、極薄膜チャネルMOSFETのキャリア輸送特性を明確にして、その決定機構を定量的に明らかにし、材料設計や素子設計上の指針を与えると共に、更なる性能向上のための新しいチャネルエンジニアリング手法を提案した。

Assessment Rating
Verification Result (Rating)

A

Assessment Rating
Result (Rating)

A+: Progress in the research exceeds the initial goal. More than expected research results are expected.

Report

(11 results)
  • 2022 Research Progress Assessment (Verification Result) ( PDF )
  • 2021 Annual Research Report   Final Research Report ( PDF )
  • 2020 Annual Research Report   Abstract(Research Progress Assessment) ( PDF )   Research Progress Assessment (Result) ( PDF )
  • 2019 Annual Research Report
  • 2018 Annual Research Report
  • 2017 Abstract ( PDF )   Comments on the Screening Results ( PDF )   Annual Research Report
  • Research Products

    (212 results)

All 2022 2021 2020 2019 2018 2017

All Journal Article (48 results) (of which Int'l Joint Research: 4 results,  Peer Reviewed: 48 results,  Open Access: 1 results) Presentation (164 results) (of which Int'l Joint Research: 74 results,  Invited: 44 results)

  • [Journal Article] Effective Mobility Enhancement Through Asymmetric Strain Channels on Extremely-Thin Body (100) GOI pMOSFETs2022

    • Author(s)
      C.-T. Chen, K. Sumita, K. Toprasertpong, M. Takenaka and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 69 Issue: 1 Pages: 25-30

    • DOI

      10.1109/ted.2021.3130221

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optimum Channel Design of Extremely-Thin-Body nMOSFETs by Utilizing Anisotropic Valley -Robust to Surface Roughness Scattering2022

    • Author(s)
      K. Sumita, C.-T. Chen, K. Toprasertpong, M. Takenaka, and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 69 Issue: 4 Pages: 2115-2121

    • DOI

      10.1109/ted.2022.3143484

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Introduction of high tensile strain in Ge-on-Insulator structures by oxidation and annealing at high temperature2022

    • Author(s)
      X. Han, C.-T. Chen, C.-M. Lim, K. Toprasertpong, M. Takenaka, and S. Takagi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 61 Issue: SC Pages: SC1027-SC1027

    • DOI

      10.35848/1347-4065/ac4075

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Low thermal budget epitaxial lift off (ELO) for Ge (111)-on-insulator structure2022

    • Author(s)
      W. H. Chang, H. -W. Wan, Yi. -T. Cheng, Y. -H. G. Lin, T. Irisawa, H Ishii, J. Kwo, M. Hong, and T. Maeda
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 61 Issue: SC Pages: SC1024-SC1024

    • DOI

      10.35848/1347-4065/ac3fca

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Surface reaction via cyclic HI and O2 plasma treatments for Ge digital dry etching2022

    • Author(s)
      H. Ishii, W. H. Chang, H. Ishii, M. Ke, and T. Maeda
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 61

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] SWIR Detection of Front Side Illumination InGaAs PhotoFETs on Si Substrate through Layer Transfer Technology2021

    • Author(s)
      OISHI Kazuaki、ISHII Hiroyuki、CHANG Wen-Hsin、SHIMIZU Tetsuji、ISHII Hiroto、FUJISHIRO Hiroki、ENDOH Akira、MAEDA Tatsuro
    • Journal Title

      Vacuum and Surface Science

      Volume: 64 Issue: 2 Pages: 74-79

    • DOI

      10.1380/vss.64.74

    • NAID

      130007985482

    • ISSN
      2433-5835, 2433-5843
    • Year and Date
      2021-02-10
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Proposal and experimental demonstration of ultrathin-body (111) InAs-on-insulator nMOSFETs with L valley conduction2021

    • Author(s)
      K. Sumita, K. Toprasertpong, M. Takenaka, and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 68 Issue: 4 Pages: 2003-2009

    • DOI

      10.1109/ted.2021.3049455

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electrical properties of ultra-thin body (111) Ge on-insulator n-channel MOSFETs fabricated by smart-cut process2021

    • Author(s)
      C.-M. Lim, Z. Zhao, K. Sumita, K. Toprasertpong, M. Takenaka and S. Takagi
    • Journal Title

      IEEE J. Electron Device Society

      Volume: 9 Pages: 612-617

    • DOI

      10.1109/jeds.2021.3085981

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impacts of Equivalent Oxide Thickness Scaling of TiN/Y2O3 Gate Stacks With Trimethylaluminum Treatment on SiGe MOS Interface Properties2021

    • Author(s)
      T.-E. Lee, K. Toprasertpong, M. Takenaka, and S. Takagi
    • Journal Title

      IEEE Electron Device Letters

      Volume: 42 Issue: 7 Pages: 966-969

    • DOI

      10.1109/led.2021.3081513

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] Re-examination of effects of ALD high-k materials on defects reduction in SiGe metal-oxide-semiconductor interfaces2021

    • Author(s)
      T.-E. Lee, K. Toprasertpong, M. Takenaka and S. Takagi
    • Journal Title

      AIP Advances

      Volume: 11 Issue: 8 Pages: 08502116-08502116

    • DOI

      10.1063/5.0061573

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed / Open Access / Int'l Joint Research
  • [Journal Article] Evaluation of interface traps inside the conduction band of InAs-On-Insulator nMOSFET by self-consistent Hall-QSCV method2021

    • Author(s)
      K. Sumita, K. Toprasertpong, M. Takenaka and S. Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 119 Issue: 10 Pages: 103501-103501

    • DOI

      10.1063/5.0057182

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High and broadband sensitivity front- side illuminated InGaAs photo field- effect transistors (photoFETs) with SWIR transparent conductive oxide (TCO) gate2021

    • Author(s)
      T. Maeda, K. Ohishi, H. Ishii, W. H. Chang, T. Shimizu, A. Endo, H. Fujisiro and T. Koida
    • Journal Title

      Appl. Phys. Lett.

      Volume: 119 Issue: 19 Pages: 192101-192101

    • DOI

      10.1063/5.0065776

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optical study of electron and acoustic phonon confinement in ultrathin-body germanium-on-insulator nanolayers2021

    • Author(s)
      V. Poborchii, J. Groenen, P. I. Geshev, J. Hattori, W. H. Chang, H. Ishii, T. Irisawa, and T. Maeda
    • Journal Title

      Nanoscale

      Volume: 13 Issue: 21 Pages: 9686-9697

    • DOI

      10.1039/d1nr01355f

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Layer Transfer Technology for Stacked Multi-Channel Semiconductor-on-Insulator Platform2021

    • Author(s)
      W. H. Chang, T.-Z. Hong, P.-J. Sung, T. Irisawa, H. Ishii1, Y.-J. Lee and T. Maeda
    • Journal Title

      ECS Transactions

      Volume: 102(4) Issue: 4 Pages: 17-26

    • DOI

      10.1149/10204.0017ecst

    • Related Report
      2021 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Accurate evaluation of specific contact resistivity between InAs/Ni?InAs alloy using a multi-sidewall transmission line method2020

    • Author(s)
      Sumita Kei、Kato Kimihiko、Takeyasu Jun、Toprasertpong Kasidit、Takenaka Mitsuru、Takagi Shinichi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: SG Pages: SGGA08-SGGA08

    • DOI

      10.35848/1347-4065/ab6cb3

    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Metal?oxide?semiconductor interface properties of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature post-metallization annealing2020

    • Author(s)
      Lee Tsung-En、Ke Mengnan、Kato Kimihiko、Takenaka Mitsuru、Takagi Shinichi
    • Journal Title

      Journal of Applied Physics

      Volume: 127 Issue: 18 Pages: 185705-185705

    • DOI

      10.1063/1.5144198

    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Evaluation of polarization characteristics in metal/ferroelectric/semiconductor capacitors and ferroelectric field-effect transistors2020

    • Author(s)
      K. Toprasertpong, K. Tahara, M. Takenaka, and S. Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 116 Issue: 24 Pages: 242903-242903

    • DOI

      10.1063/5.0008060

    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Operation of (111) Ge-on-Insulator n-Channel MOSFET Fabricated by Smart-Cut Technology2020

    • Author(s)
      Lim Cheol-Min、Zhao Ziqiang、Sumita Kei、Toprasertpong Kasidit、Takenaka Mitsuru、Takagi Shinichi
    • Journal Title

      IEEE Electron Device Letters

      Volume: 41 Issue: 7 Pages: 985-988

    • DOI

      10.1109/led.2020.2999777

    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Influence of layer transfer and thermal annealing on the properties of InAs-On-Insulator films2020

    • Author(s)
      Sumita K.、Takeyasu J.、Toprasertpong K.、Takenaka M.、Takagi S.
    • Journal Title

      Journal of Applied Physics

      Volume: 128 Issue: 1 Pages: 015705-015705

    • DOI

      10.1063/5.0007978

    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Reduction of MOS Interface Defects in TiN/Y?O?/Si?.??Ge?.?? Structures by Trimethylaluminum Treatment2020

    • Author(s)
      Lee Tsung-En、Ke Mengnan、Toprasertpong Kasidit、Takenaka Mitsuru、Takagi Shinichi
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 67 Issue: 10 Pages: 4067-4072

    • DOI

      10.1109/ted.2020.3014563

    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Improved Ferroelectric/Semiconductor Interface Properties in Hf0.5Zr0.5O2 Ferroelectric FETs by Low-Temperature Annealing2020

    • Author(s)
      K. Toprasertpong, K. Tahara, T. Fukui, Z. Lin, K. Watanabe, M. Takenaka and S. Takagi
    • Journal Title

      IEEE Electron Device Lett.

      Volume: 41 Issue: 10 Pages: 1588-1591

    • DOI

      10.1109/led.2020.3019265

    • Related Report
      2020 Annual Research Report
    • Peer Reviewed
  • [Journal Article] InGaAs photo field-effect-transistors (PhotoFETs) on half-inch Si wafer using layer transfer technology2020

    • Author(s)
      Maeda Tatsuro、Ishii Hiroyuki、Chang Wen Hsin、Shimizu Tetsuji、Ishii Hiroto、Ohishi Kazuaki、Endoh Akira、Fujishiro Hiroki
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 59 Issue: SG Pages: SGGE03-SGGE03

    • DOI

      10.7567/1347-4065/ab5b44

    • NAID

      210000157638

    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Performance and reliability improvement in Ge(100) nMOSFETs through channel flattening process2020

    • Author(s)
      W. H. Chang, T. Irisawa, W. Mizubayashi, H. Ishii, and T. Maeda
    • Journal Title

      Solid-State Electronics

      Volume: 169 Pages: 107816-107816

    • DOI

      10.1016/j.sse.2020.107816

    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] (Invited) Epitaxial Growth of Ge/III-V Films and Hetero-Layer Lift-off for Ultra-Thin GeOI Fabrication2020

    • Author(s)
      Maeda Tatsuro、Irisawa Toshifumi、Ishii Hiroyuki、Chang Wen Hsin
    • Journal Title

      ECS Transactions

      Volume: 98 Issue: 5 Pages: 157-167

    • DOI

      10.1149/09805.0157ecst

    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Spectral Responsivity Characteristics of Front‐Side Illumination InGaAs PhotoFETs on Si2020

    • Author(s)
      O. Ohishi, H. Ishii, W. H. Chang, H. Ishii, A. Endo, H. Fujisiro and T. Maeda
    • Journal Title

      Phys. Status Solidi A

      Volume: 218(3) Issue: 3

    • DOI

      10.1002/pssa.202000439

    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of hydrogen ion implantation dose on physical and electrical properties of Ge-on-insulator layers fabricated by the smart-cut process2020

    • Author(s)
      Lim C.-M.、Zhao Z.、Sumita K.、Toprasertpong K.、Takenaka M.、Takagi S.
    • Journal Title

      AIP Advances

      Volume: 10 Issue: 1 Pages: 015045-015045

    • DOI

      10.1063/1.5132881

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Fabrication of thin body InAs-on-insulator structures by Smart Cut method with H+ implantation at room temperature2019

    • Author(s)
      Sumita Kei、Kato Kimihiko、Takenaka Mitsuru、Takagi Shinichi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SB Pages: SBBA03-SBBA03

    • DOI

      10.7567/1347-4065/aafa68

    • NAID

      210000135316

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Electrical characteristic of atomic layer deposition La2O3/Si MOSFETs with ferroelectric-type hysteresis2019

    • Author(s)
      Endo Kiyoshi、Kato Kimihiko、Takenaka Mitsuru、Takagi Shinichi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 58 Issue: SB Pages: SBBA05-SBBA05

    • DOI

      10.7567/1347-4065/aafecf

    • NAID

      210000135409

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Slow Trap Properties and Generation in Al2O3/GeOx/Ge MOS Interfaces Formed by Plasma Oxidation Process2019

    • Author(s)
      Ke Mengnan、Takenaka Mitsuru、Takagi Shinichi
    • Journal Title

      ACS Applied Electronic Materials

      Volume: 1 Issue: 3 Pages: 311-317

    • DOI

      10.1021/acsaelm.8b00071

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks2019

    • Author(s)
      Lee T.-E.、Kato K.、Ke M.、Toprasertpong K.、Takenaka M.、Takagi S.
    • Journal Title

      Microelectronic Engineering

      Volume: 214 Pages: 87-92

    • DOI

      10.1016/j.mee.2019.05.005

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Re-examination of effects of sulfur treatment on Al2O3/InGaAs metal-oxide-semiconductor interface properties2019

    • Author(s)
      Yoon S.-H.、Kato K.、Yokoyama C.、Ahn D.-H.、Takenaka M.、Takagi S.
    • Journal Title

      Journal of Applied Physics

      Volume: 126 Issue: 18 Pages: 184501-184501

    • DOI

      10.1063/1.5111630

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Reduction of Slow Trap Density in Al2O3/GeO x N y /n-Ge MOS Interfaces by PPN-PPO Process2019

    • Author(s)
      Ke Mengnan、Takenaka Mitsuru、Takagi Shinichi
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 66 Issue: 12 Pages: 5060-5064

    • DOI

      10.1109/ted.2019.2948074

    • Related Report
      2019 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of SiGe Layer Thickness in Starting Substrates on Strained Ge-on-Insulator pMOSFETs Fabricated by Ge Condensation Method2019

    • Author(s)
      K.-W. Jo, W.-K. Kim, M. Takenaka and S. Takagi
    • Journal Title

      Appl. Phys. Lett.

      Volume: 114 Issue: 6 Pages: 062101-062101

    • DOI

      10.1063/1.5068713

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed / Int'l Joint Research
  • [Journal Article] InGaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding2019

    • Author(s)
      M. Yokoyama, H. Yokoyama, M. Takenaka and S. Takagi
    • Journal Title

      J. Appl. Phys.

      Volume: 125 Issue: 11 Pages: 114501-114501

    • DOI

      10.1063/1.5049518

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ultra-Low Power III-V-Based Mosfets and Tunneling FETs2018

    • Author(s)
      S. Takagi, D.-h. Ahn, T. Gotow, C. Yokoyama, C.-Y. Chang, K. Endo, K. Katoh and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 85 Issue: 8 Pages: 27-37

    • DOI

      10.1149/08508.0027ecst

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Pre-treatment Effects on high-k/InxGa1-xAs MOS Interface Properties and their Physical Model2018

    • Author(s)
      C. Yokoyama, C.-Y. Change, M. Takenaka, and S. Takagi
    • Journal Title

      IEEE Journal of the Electron Devices Society

      Volume: 6 Pages: 487-493

    • DOI

      10.1109/jeds.2017.2760344

    • Related Report
      2018 Annual Research Report 2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of atomic layer deposition high k films on slow trap density in Ge MOS interfaces with GeOx interfacial layers formed by plasma pre-oxidation2018

    • Author(s)
      M. Ke, M. Takenaka, and S. Takagi
    • Journal Title

      IEEE Journal of the Electron Devices Society

      Volume: 6 Pages: 950-955

    • DOI

      10.1109/jeds.2018.2822758

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Relationship between interface state generation and substrate hole current in InGaAs metal-oxide-semiconductor (MOS) interfaces2018

    • Author(s)
      S.-H. Yoon, D.-H. Ahn, M. Takenaka and S. Takagi
    • Journal Title

      J. Appl. Phys.

      Volume: 123 Issue: 23 Pages: 234502-234502

    • DOI

      10.1063/1.5031052

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ultrathin-body Ge-On-Insulator MOSFET and TFET technologies2018

    • Author(s)
      S. Takagi, W.-K. Kim, K.-W. Jo, R. Matsumura, R. Takaguchi, T. Katoh, T.-E. Bae, K. Kato and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 86 Issue: 7 Pages: 75-86

    • DOI

      10.1149/08607.0075ecst

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Physical Mechanisms of Mobility Enhancement in Ultrathin Body GeOI pMOSFETs Fabricated by HEtero-Layer-Lift-Off Technology2018

    • Author(s)
      W. H. Chang, T. Irisawa, H. Ishii, N. Uchida and T. Maeda
    • Journal Title

      IEEE Transactions on Electron Devices

      Volume: 66 Issue: 3 Pages: 1182-1188

    • DOI

      10.1109/ted.2019.2895349

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] High performance UTB GeOI n and pMOSFETs featuring HEtero-Layer-Lift-Off (HELLO) technology2018

    • Author(s)
      W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi, Y. Kurashima, N. Uchida, and T. Maeda
    • Journal Title

      ECS Transactions

      Volume: 86 Issue: 10 Pages: 25-34

    • DOI

      10.1149/08610.0025ecst

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ultra-thin germanium-tin on insulator structure through direct bonding technique2018

    • Author(s)
      T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Oka, M. Kurosawa, Y. Imai, O. Nakatsuka and N. Uchida
    • Journal Title

      Semiconductor Science and Technology

      Volume: 33 Issue: 12 Pages: 124002-124002

    • DOI

      10.1088/1361-6641/aae620

    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] MOS Interface Defect Control in Ge/IIIV Gate Stacks2018

    • Author(s)
      S. Takagi, M. Ke, C. Y. Chang, C. Yokoyama, M. Yokoyama, T. Gotow, K. Nishi, and M. Takenaka
    • Journal Title

      ECS Transactions

      Volume: 80 (1) Issue: 1 Pages: 109-118

    • DOI

      10.1149/08001.0109ecst

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of La2O3/InGaAs MOS Interfaces on the Performance of InGaAs MOSFETs2017

    • Author(s)
      C.-Y. Chang, C. Yokoyama, M. Takenaka, Member and S. Takagi
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 64 Issue: 6 Pages: 2519-2525

    • DOI

      10.1109/ted.2017.2696741

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers2017

    • Author(s)
      M. Ke, M. Takenaka and S. Takagi
    • Journal Title

      Microelectronic Eng.

      Volume: 178 Pages: 132-136

    • DOI

      10.1016/j.mee.2017.04.021

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Interface state generation of Al2O3/InGaAs MOS structures by electrical stress2017

    • Author(s)
      S. -H. Yoon, C.-Y. Chang, D. H. Ahn, M. Takenaka and S. Takagi
    • Journal Title

      Microelectronic Eng.

      Volume: 178 Pages: 313-317

    • DOI

      10.1016/j.mee.2017.05.015

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Modulation of sub-threshold properties of InGaAs MOSFETs by La2O3 gate dielectrics2017

    • Author(s)
      C.-Y. Chang, K. Endo, K. Kato, M. Takenaka and S. Takagi
    • Journal Title

      AIP Advances

      Volume: 7 Issue: 9 Pages: 095215-095215

    • DOI

      10.1063/1.4999958

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs2017

    • Author(s)
      W.-H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi, Y. Kurashima, N. Uchida, and T. Maeda
    • Journal Title

      IEEE Trans. Electron Devices

      Volume: 64 Issue: 11 Pages: 4615-4621

    • DOI

      10.1109/ted.2017.2756061

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Presentation] 先端ロジックCMOSのためのチャネル材料・デバイス技術2022

    • Author(s)
      高木信一
    • Organizer
      電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―(第27回研究会)
    • Related Report
      2021 Annual Research Report
    • Invited
  • [Presentation] In2O3系近赤外域透明導電膜ゲートを用いた InGaAs PhotoFETsの動作実証2022

    • Author(s)
      大石和明、石井寛仁、張文馨、石井裕之、遠藤聡、藤代博記、前田辰郎
    • Organizer
      電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―(第27回研究会)
    • Related Report
      2021 Annual Research Report
  • [Presentation] 表面ラフネス散乱の新モデルに基づく極薄膜nMOSFETの最適なチャネル材料と面方位の設計2022

    • Author(s)
      隅田圭, Chia-Tsong Chen, トープラサートポン カシディット, 竹中充, 高木信一
    • Organizer
      電子情報通信学会SDM研究会/応用物理学会シリコンテクノロジー分科会共催1月研究会(IEDM特集)
    • Related Report
      2021 Annual Research Report
    • Invited
  • [Presentation] 異種材料集積による最先端集積Siデバイス技術2022

    • Author(s)
      高木信一
    • Organizer
      千葉エリア産官学公金共創イノベーションネットワーク第1回産官学公金マッチングシンポジウム
    • Related Report
      2021 Annual Research Report
    • Invited
  • [Presentation] 表面ラフネス散乱に対してロバストな極薄膜nMOSFETのチャネル材料と面方位の最適設計2022

    • Author(s)
      隅田圭, Chia-Tsong Chen, トープラサートポン カシディット, 竹中充, 高木信一
    • Organizer
      第69回応用物理学会春季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] 液浸ラマン分光法による極薄膜GOI pMOSFETの異方性二軸応力評価2022

    • Author(s)
      横川凌, Chia-Tsong Chen, Kasidit Toprasertpong, 竹中充, 高木信一, 小椋厚志
    • Organizer
      第69回応用物理学会春季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] HI/O2プラズマを用いた常温でのGeサイクルドライエッチングの検討2022

    • Author(s)
      大石和明、石井寛仁、張文馨、石井裕之、遠藤聡、藤代博記、前田辰郎
    • Organizer
      第69回応用物理学会春季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] In2O3系近赤外域透明導電性酸化膜ゲートを用いた表面照射型InGaAs PhotoFETsの特性評価2022

    • Author(s)
      大石和明、石井寛仁、張文馨、石井裕之、遠藤聡、藤代博記、前田辰郎
    • Organizer
      第69回応用物理学会春季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Impact of asymmetric strain on performance of extremely-thin body (100) GOI and (110) SGOI pMOSFETs2021

    • Author(s)
      C. T. Chen, R. Yokogawa, K. Toprasertpong, A. Ogura, M. Takenaka and S. Takagi
    • Organizer
      Symp. on VLSI technology
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Improvement of performance of Si0.8Ge0.2/SOI p-FinFETs by ultrathin Y2O3 gate stacks with TMA treatment2021

    • Author(s)
      T.-E. Lee, S.-T. Huang, C.-Y. Yang, K. Toprasertpong, M. Takenaka, Y.-J. Lee and S. Takagi
    • Organizer
      53rd International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Introduction of high tensile strain in Ge-on-Insulator structures by oxidation/annealing at high temperature2021

    • Author(s)
      X. Han, C.-T. Chen, C.-M. Lim, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      53rd International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Anisotropic Strain States in Extremely-Thin Body Ge-on-Insulator p-type MOSFET Observed by Oil-immersion Raman Spectroscopy2021

    • Author(s)
      R. Yokogawa, C.-T. Chen, T. Kasidit, M. Takenaka, S. Takagi and A. Ogura
    • Organizer
      53rd International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Low Thermal Budget Epitaxial Lift Off for Ge (111)-on-Insulator Structure2021

    • Author(s)
      W. H. Chang, H. -W. Wan, Yi. -T. Cheng, Y. -H. G. Lin, T. Irisawa, H Ishii, J. Kwo, M. Hong, and T. Maeda
    • Organizer
      53rd International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Advanced CMOS technologies for ultra-low power logic and AI applications2021

    • Author(s)
      S. Takagi, K. Toprasertpong, K. Kato, K. Sumita, E. Nako, R. Nakane, K.-w. Jo and M. Takenaka
    • Organizer
      IEEE Electron Devices Technology and Manufacturing (EDTM) Conference
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Heterogeneous material integration by layer transfer technology2021

    • Author(s)
      T. Maeda
    • Organizer
      IEEE Electron Devices Technology and Manufacturing (EDTM) Conference
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] エピタキシャルリフトオフ(ELO)法によるGeOI(111)構造の作成2021

    • Author(s)
      W. H. Chang, H. -W. Wan, Yi. -T. Cheng, Y. -H. G. Lin, T. Irisawa, H Ishii, J. Kwo, M. Hong, and T. Maeda
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] 近赤外域透明導電性酸化膜ゲートによる表面照射型InGaAs PhotoFETs2021

    • Author(s)
      大石和明、石井寛仁、張文馨、石井裕之、遠藤聡、藤代博記、前田辰郎
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] ラフネスを有するチャネルにおける2次元電子ガスの基底状態の新たな定式化と表面ラフネス散乱移動度への影響2021

    • Author(s)
      隅田圭, トープラサートポン カシディット, 竹中充, 高木信一
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] C-V測定によるAl2O3/GeOx/p-Ge MOS界面の電子とホールの遅い準位密度の評価2021

    • Author(s)
      柯夢南, 竹中充, 高木信一
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Performance improvement of Si0.8Ge0.2/SOI p-FinFETs by ultrathin Y2O3 gate stacks with TMA treatment2021

    • Author(s)
      T.-E. Lee, S.-T. Huang, C.-Y. Yang, K. Toprasertpong, M. Takenaka, Y.-J. Lee, and S. Takagi
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Introduction of high tensile strain into Ge-on-Insulator structures by oxidation/annealing at high temperature2021

    • Author(s)
      X. Y. Han, C. T. Chen, C.-M Lim, K. Toprasertpong, M. Takenaka, and S. Takagi
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Hole mobility enhancement in extremely-thin body asymmetrically-strained (100) GOI pMOSFETs2021

    • Author(s)
      C. -T. Chen, R. Yokogawa, K. Toprasertpong, A. Ogura, M. Takenaka and S. Takagi
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Asymmetrically-strained (110) SGOI pMOSFETs for hole mobility enhancement in extremely-thin body channels2021

    • Author(s)
      C. -T. Chen, R. Yokogawa, K. Toprasertpong, A. Ogura, M. Takenaka and S. Takagi
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] 液浸ラマン分光法で観測されるGOI極薄膜ラマンスペクトルのブロードピークと歪の関係に関する考察2021

    • Author(s)
      横川凌, C.-T. Chen, K. Toprasertpong, 竹中充, 高木信一, 小椋厚志
    • Organizer
      第82回応用物理学会秋季学術講演会
    • Related Report
      2021 Annual Research Report
  • [Presentation] Layer Transfer Technology for Stacked Multi-Channel Semiconductor-on-Insulator Platform2021

    • Author(s)
      W. H. Chang, T.-Z. Hong, P.-J. Sung, T. Irisawa, H. Ishii1, Y.-J. Lee and T. Maeda
    • Organizer
      239th Electrochemical Society (ECS) Meeting
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Surface reaction via cyclic HI and O2 plasma treatments for Ge digital dry etching2021

    • Author(s)
      H. Ishii, W. H. Chang, H. Ishii, M. Ke, and T. Maeda
    • Organizer
      34th International Microprocesses and Nanotechnology Conference (MNC)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Optimum Design of Channel Material and Surface Orientation for Extremely-Thin-Body nMOSFETs under New Modeling of Surface Roughness Scattering2021

    • Author(s)
      K. Sumita, C.-T. Chen, K. Toprasertpong, M. Takenaka, and S. Takagi
    • Organizer
      IEEE International Electron Device Meeting (IEDM)
    • Related Report
      2021 Annual Research Report
    • Int'l Joint Research
  • [Presentation] (111)面チャネルの薄膜化によるInAs-OI nMOSFETのサブバンド制御手法の提案と極薄膜(111) InAs-OI基板の実現2021

    • Author(s)
      隅田圭, 吉津遼平, トープラサートポン・カシディット, 竹中充, 高木信一
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
  • [Presentation] (111) InAs-OI nMOSFETのチャネル薄膜化による移動度向上の実現と伝導帯内の界面準位の実験的評価2021

    • Author(s)
      隅田圭, 吉津遼平, トープラサートポン・カシディット, 竹中充, 高木信一
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report
  • [Presentation] HfO2系FeFETにおける結晶化アニール温度とSi界面特性のトレードオフ2021

    • Author(s)
      トープラサートポン・カシディット,田原建人,福井太一郎,林早ヨウ,渡辺耕坪,竹中充,高木信一
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
  • [Presentation] InAs/Ni-InAs間のコンタクト抵抗率とその評価法に関する実験的検討2021

    • Author(s)
      竹安淳, 隅田圭, トープラサートポン・カシディット, 竹中充, 高木信一
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
  • [Presentation] Defect control of Y2O3-based SiGe MOS interfaces properties2021

    • Author(s)
      T.-E. Lee, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Invited
  • [Presentation] Characterization of slow traps in MOS interfaces of TiN/Y2O3/SiGe gate stacks2021

    • Author(s)
      T.-E. Lee, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
  • [Presentation] Characterization of slow traps in SiGe MOS interfaces by TiN/Y2O3 gate stacks2021

    • Author(s)
      T.-E. Lee, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      IEEE International Reliability Physics Symposium (IRPS)
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 異種半導体材料の積層化およびデバイス集積化技術2021

    • Author(s)
      前田辰郎
    • Organizer
      第5回3次元積層半導体量子イメージセンサ研究会
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] UTB-GeOI の量子化準位の顕微フォトリフレクタンス測定2021

    • Author(s)
      公平拓見、安武裕輔、張文馨、入沢寿史、石井裕之、前田辰郎、深津晋
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
  • [Presentation] 寄生抵抗を考慮した近赤外InGaAs PhotoFETsの感度評価2021

    • Author(s)
      大石和明、石井寛仁、張文馨、石井裕之、遠藤聡、藤代博記、前田辰郎
    • Organizer
      第68回応用物理学会春季学術講演会
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
  • [Presentation] [招待講演] チャネル薄膜化と(111)面方位の組み合わせによるInAs-On-Insulator nMOSFETのサブバンド制御2021

    • Author(s)
      隅田圭, トープラサートポン カシディット, 竹中充, 高木 信一
    • Organizer
      電子情報通信学会SDM研究会/応用物理学会シリコンテクノロジー分科会共催1月研究会(IEDM特集)
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] InAs-On-Insulatorチャネルの極薄膜化と(111)面方位の組み合わせによるサブバンド制御を利用したnMOSFETの高性能化2021

    • Author(s)
      隅田圭, トープラサートポン カシディット, 竹中充, 高木信一
    • Organizer
      電気学会電子デバイス研究会, 「高機能化合物半導体エレクトロニクス技術と将来システムへの応用」
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] Asymmetric Polarization Response of Electrons and Holes in Si FeFETs: Demonstration of Absolute Polarization Hysteresis Loop and Inversion Hole Density over 2×1013 cm-22020

    • Author(s)
      K. Toprasertpong, Z. -Y. Lin, T. -E. Lee, M. Takenaka, and S. Takagi
    • Organizer
      Symposia on VLSI Technology
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 【招待講演】先端CMOSデバイスの研究動向2020

    • Author(s)
      高木信一
    • Organizer
      東レリサーチセンター半導体デバイス分析セミナー2020
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Invited
  • [Presentation] Prospects and challenges of advanced CMOS logic devices2020

    • Author(s)
      S. Takagi
    • Organizer
      7th International conference on “Microelectronics, Circuits and Systems” (Micro2020)
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] [招待講演]Si強誘電体FETにおける分極・電荷のカップリングとメモリ特性への影響2020

    • Author(s)
      トープラサートポン・カシディット, 林早ヨウ, 李宗恩, 竹中充, 高木信一
    • Organizer
      電子情報通信学会ICD/SDM/ ITE-IST研究会
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Invited
  • [Presentation] Si強誘電体FETにおける強誘電分極に誘起される反転層電荷の振る舞い2020

    • Author(s)
      トープラサートポン・カシディット,林早ヨウ,李宗恩,竹中充,高木信一
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
  • [Presentation] Impact of ALD high-k materials on SiGe MOS interface properties with TiN gate2020

    • Author(s)
      T.-E. Lee, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
  • [Presentation] Thickness dependence of antiferroelectricity in ALD ultrathin ZrO2 films2020

    • Author(s)
      Xuan Luo, Kasidit Toprasertpong, Mitsuru Takenaka, Shinichi Takagi
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
  • [Presentation] Critical Impact of Ferroelectric-Phase Formation Annealing on MFIS Interface of HfO2-Based Si FeFETs2020

    • Author(s)
      K. Toprasertpong, K. Tahara, T. Fukui, Z. Lin, K. Watanabe, M. Takenaka and S. Takagi
    • Organizer
      52nd International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Antiferroelectricity and cycling behavior of ALD ZrO2 ultra-thin films2020

    • Author(s)
      X. Luo, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      52nd International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Subband Engineering by Combination of Channel Tchikness Scaling and (111) Surface Orientation in InAs-On-Insulator nMOSFETs2020

    • Author(s)
      K. Sumita, K. Toprasertpong, M. Takenaka, and S. Takagi
    • Organizer
      IEEE International Electron Devices Meeting (IEDM 2020)
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Revision of conductance method for evaluating interface state density at MFIS interfaces2020

    • Author(s)
      T.-E. Lee, Z. Lin, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      51th IEEE Semiconductor Interface Specialists Conference (SISC)
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] [招待講演] チャネル薄膜化と(111)面方位の組み合わせによるInAs-On-Insulator nMOSFETのサブバンド制御2020

    • Author(s)
      隅田圭, トープラサートポン・カシディット, 竹中充, 高木 信一
    • Organizer
      電子情報通信学会SDM研究会/応用物理学会シリコンテクノロジー分科会共催1月研究会(IEDM特集)
    • Related Report
      2020 Annual Research Report
  • [Presentation] InAs-On-Insulatorチャネルの極薄膜化と(111)面方位の組み合わせによるサブバンド制御を利用したnMOSFETの高性能化2020

    • Author(s)
      隅田圭, トープラサートポン・カシディット, 竹中充, 高木信一
    • Organizer
      電気学会電子デバイス研究会「高機能化合物半導体エレクトロニクス技術と将来システムへの応用」
    • Related Report
      2020 Annual Research Report
    • Invited
  • [Presentation] Advanced Layer Transfer Technology of post-Si Materials for Heterogeneous Integration2020

    • Author(s)
      T. Maeda, T. Irisawa, H. Ishii, and W. H. Chang
    • Organizer
      4th IEEE Electron Device Technology and Manufacturing (EDTM) Conference 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Performance and Reliability Improvement in Ge nMOSFETs with Different Surface Orientation through Channel Flattening Process2020

    • Author(s)
      W. H. Chang, T. Irisawa, W. Mizubayashi, H. Ishii, and T. Maeda
    • Organizer
      4th IEEE Electron Device Technology and Manufacturing (EDTM) Conference 2020
    • Related Report
      2020 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Layer transfer technology for heterogeneous material integration2020

    • Author(s)
      T. Maeda
    • Organizer
      Symposia on VLSI Technology and Circuits, Short Course
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Si 基板上表面照射型 InGaAs PhotoFET の近赤外域分光感度特性2020

    • Author(s)
      大石和明、石井寛仁、張文馨、石井裕之、遠藤聡、藤代博記、前田辰郎
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
  • [Presentation] Ultrathin-body GeOI における量子閉じ込め電子ラマン散乱2020

    • Author(s)
      公平拓見、安武裕輔、張文馨、入沢寿史、石井裕之、内田紀行、前田辰郎、深津晋
    • Organizer
      第81回応用物理学会秋季学術講演会
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
  • [Presentation] Epitaxial Growth of Ge/III-V Films and Hetero-Layer Lift-Off for Ultra-Thin GeOI Fabrication2020

    • Author(s)
      T. Maeda, T. Irisawa, H. Ishii, and W. H. Chang
    • Organizer
      PRiME 2020 G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices 9
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] 異種半導体転写によるヘテロジーニアスインテグレーション2020

    • Author(s)
      前田辰郎
    • Organizer
      SSISフォーラム(一般社団法人半導体産業人協会)
    • Related Report
      2020 Annual Research Report 2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] First demonstration of (111) Ge-on-insulator n-channel MOSFET fabricated by smart-cut technology2020

    • Author(s)
      C.-M. Lim, Z. Zhao, K. Sumita, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 強誘電体FETのMOS界面における電荷分布の評価とデバイス動作の理解2020

    • Author(s)
      トープラサートポン・カシディット,竹中充,高木信一
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] InAs-On-Insulator基板の高品質化と貼り合わせ界面特性の評価2020

    • Author(s)
      隅田圭, 加藤公彦, 竹安淳, トープラサートポン・カシディット, 竹中充, 高木信一
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] Multi-Sidewall TLMを用いた精密なInAs/Ni-InAs間の接触抵抗率測定2020

    • Author(s)
      隅田圭, 竹安淳, 加藤公彦, トープラサートポン・カシディット, 竹中充, 高木信一
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] プラズマ酸化により作製したAl2O3/GeOx/n-Ge MOS界面における遅い準位の特性2020

    • Author(s)
      柯夢南, 竹中充, 高木信一
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] n-Ge MOS絶縁膜中の異なるキャリア捕獲トラップの峻別手法の提案2020

    • Author(s)
      柯夢南, 竹中充, 高木信一
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] n-Ge MOS構造における異なる界面層へのキャリアトラップ特性の比較2020

    • Author(s)
      柯夢南, 竹中充, 高木信一
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 酸化濃縮法により作製した圧縮ひずみ(110)面SiGe-OI pMOSFET2020

    • Author(s)
      曺光元、トープラサートポン・カシディット、竹中充、高木 信一
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 酸化濃縮法により作製したGOIを用いた引張りひずみGOI nMOSFET2020

    • Author(s)
      曺光元, 林澈敏, トープラサートポン・カシディット, 竹中充, 高木信一
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] (001)GOI薄膜化によるnMOSFETの電子移動度向上機構に関する考察2020

    • Author(s)
      高木信一, 曺光元, 林澈敏, トープラサートポン・カシディット, 竹中充
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Improvement of ferroelectric properties of TiN/Hf0.5Zr0.5O2/Si gate stacks by the insertion of Al2O3 interfacial layers2020

    • Author(s)
      Z.-Y. Lin, T.-E. Lee, H.-Z. Tang, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 転写技術を用いたSi基板上の表面照射型InGaAs PhotoFETの実証2020

    • Author(s)
      大石和明,石井寛仁,張文馨, 石井裕之, 清水鉄司,遠藤聡, 藤代博記,前田辰郎
    • Organizer
      「電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―」 (第25回研究会)
    • Related Report
      2019 Annual Research Report
  • [Presentation] Ge表面清浄プロセスを用いたY2O3/Ge pMOSFETsの作製と評価2020

    • Author(s)
      石井寛仁,張文馨, 石井裕之, 森田行則,遠藤聡, 藤代博記,前田辰郎
    • Organizer
      「電子デバイス界面テクノロジー研究会 ―材料・プロセス・デバイス特性の物理―」 (第25回研究会)
    • Related Report
      2019 Annual Research Report
  • [Presentation] Y2O3/Ge pMOSFETsにおけるGe表面清浄化プロセスの検討2020

    • Author(s)
      石井寛仁,張文馨, 石井裕之, 森田行則,遠藤聡, 藤代博記,前田辰郎
    • Organizer
      SATテクノロジー・ショーケース2020
    • Related Report
      2019 Annual Research Report
  • [Presentation] Ultrathin-body GeOI の円偏光フォトルミネッセンス2020

    • Author(s)
      公平拓見、安武裕輔、張文馨、入沢寿史、石井裕之、内田紀行、前田辰郎、深津晋
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Geチャネル平坦化プロセスにおけるGe nMOSFETsの面方位依存性2020

    • Author(s)
      石井寛仁,張文馨, 入沢寿史, 石井裕之, 水林亘,前田辰郎
    • Organizer
      第67回応用物理学会春季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Advanced Layer Transfer Technology of post-Si Materials for Heterogeneous Integration2020

    • Author(s)
      T. Maeda, T. Irisawa, H. Ishii, and W. H. Chang
    • Organizer
      4th IEEE Electron Device Technology and Manufacturing (EDTM) Conference
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Performance and Reliability Improvement in Ge nMOSFETs with Different Surface Orientation through Channel Flattening Process2020

    • Author(s)
      W. H. Chang, T. Irisawa, W. Mizubayashi, H. Ishii, and T. Maeda
    • Organizer
      4th IEEE Electron Device Technology and Manufacturing (EDTM) Conference
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Advanced MOSFETs and TFETs using Alternative Semiconductors for Ultralow Power Logic Applications2019

    • Author(s)
      S. Takagi, K. Kato, K. Sumita, K.-W. Jo, R. Takaguchi, D.-H. Ahn, K. Toprasertpong, M. Takenaka
    • Organizer
      MRS spring meeting, Symposium: EP09: Devices and Materials to Extend the CMOS Roadmap for Logic and Memory Applications
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Effects of thermal annealing on film quality of InAs-On-Insulator structures fabricated by Smart Cut method2019

    • Author(s)
      K. Sumita, J. Takeyasu, K. Kato, M. Takenaka, and S. Takagi
    • Organizer
      2019 Compound Semiconductor Week (CSW2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Improvement of SiGe MOS interface properties with a wide range of Ge contents by using TiN/Y2O3 gate stacks with TMA passivation2019

    • Author(s)
      T.-E. Lee, K. Kato, M. Ke, M. Takenaka, and S. Takagi,
    • Organizer
      Symposia on VLSI Technology
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Advanced MOS Device Technology for Low Power Logic LSI2019

    • Author(s)
      S. Takagi, K. Kato, K. Sumita, K.-w. Jo, C.-M. Lim, R. Takaguchi, D.-H. Ahn, J. Takeyasu, K. Toprasertpong and M. Takenaka
    • Organizer
      26th International Conference Mixed Design of Integrated Circuits and Systems (MIXDES)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] MOS interface defect control in alternative channel materials2019

    • Author(s)
      S. Takagi, M. Ke, D.-H Ahn, T.-E. Lee, S.-H. Yoon, K. Kato, K. Toprasertpong and M. Takenaka
    • Organizer
      21st Conference on Insulating Films on Semiconductors (INFOS 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks2019

    • Author(s)
      T.-E. Lee, K. Kato, M. Takenaka and S. Takagi
    • Organizer
      21st Conference on Insulating Films on Semiconductors (INFOS 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Re-examination of Sulfur treatment effects on Al2O3/InGaAs MOS interface properties2019

    • Author(s)
      S.-H. Yoon, K. Kato, C. Yokoyama, M. Takenaka and S. Takagi
    • Organizer
      21st Conference on Insulating Films on Semiconductors (INFOS 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Effects of Hydrogen ion implantation dose on electrical and physical properties of (100) and (111) Ge-on-insulator substrates fabricated by Smart-cut process2019

    • Author(s)
      C.-M. Lim, Z. Zhao, K. Sumita, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      51th International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Accurate evaluation of contact resistivity between InAs/Ni-InAs alloy2019

    • Author(s)
      K. Sumita, J. Takeyasu, K. Kato, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      51th International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] (NH4)2S処理理前の前処理がAl2O3/InGaAs MOS界面に与える影響2019

    • Author(s)
      尹尚希, 加藤公彦, 横山千晶, 安大煥, 竹中充, 高木信一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Improvement of Si0.78Ge0.22 MOS interface properties by using TiN/Y2O3 gate stacks with TMA passivation2019

    • Author(s)
      T. Lee, M. Takenaka, and S. Takagi
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Influence of hydrogen ion implantation dose on characteristics of Ge-on-insulator substrates fabricated by smart-cut technology2019

    • Author(s)
      C.-M. Lim, Z. Zhao, K. Sumita, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Smart Cut法により作製したInAs-On-Insulator基板への熱処理の影響2019

    • Author(s)
      隅田圭, 竹安淳, 加藤公彦, トープラサートポン・カシディット, 竹中充, 高木信一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Performance enhancement of extremely-thin-body SiGe- or Ge-on-insulator pMOSFETs fabricated by Ge condensation2019

    • Author(s)
      K.-W. Jo, W.-K. Kim, M. Takenaka and S. Takagi
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] TiN/Hf0.5Zr0.5O2/Si MFSキャパシタの電気特性に与える基板タイプの影響2019

    • Author(s)
      トープラサートポン・カシディット,田原建人,福井太一郎,竹中充,高木信一
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Fabrication of high quality InAs-on-Insulator structures by Smart Cut process with reuse of InAs wafers2019

    • Author(s)
      K. Sumita, J. Takeyasu, K. Kato, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      IEEE International 3D Systems Integration Conference (3DIC)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Importance of semiconductor MOS interface control on advanced electron devices2019

    • Author(s)
      S. Takagi, T.-E. Lee, M. Ke, S.-H. Yoon, D.-H Ahn, K. Kato, K. Toprasertpong and M. Takenaka
    • Organizer
      International Workshop on Dielectric Thin Films for Future ULSI Devices: Science and Technology (IWDTF)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Direct Observation of Interface Charge Behaviors in FeFET by Quasi-Static Split C-V and Hall Techniques: Revealing FeFET Operation2019

    • Author(s)
      K. Toprasertpong, M. Takenaka, and S. Takagi
    • Organizer
      IEEE International Electron Devices Meeting (IEDM 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Strain and surface orientation engineering in extremely-thin body Ge and SiGe-on-insulator MOSFETs fabricated by Ge condensation2019

    • Author(s)
      K.-W. Jo, C.-M. Lim, W.-K. Kim, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      IEEE International Electron Devices Meeting (IEDM 2019)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Impact of atomic layer deposition high-k materials on Si0.78Ge0.22 MOS interface properties with TiN gate2019

    • Author(s)
      T.-E. Lee, K. Toprasertpong, M. Takenaka and S. Takagi
    • Organizer
      50th IEEE Semiconductor Interface Specialists Conference (SISC)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Contributions of electron and hole slow traps to hysteresis in C-V characteristics of Al2O3/GeOx/p-Ge MOS capacitors2019

    • Author(s)
      M. Ke, M. Takenaka and S. Takagi
    • Organizer
      50th IEEE Semiconductor Interface Specialists Conference (SISC)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Germanium Layer Transfer with Low Temperature Direct Bonding and Epitaxial Lift-off Technique for Ge-based monolithic 3D integration2019

    • Author(s)
      T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, Y. Kurashima, H. Takagi and N. Uchida
    • Organizer
      Silicon Nanoelectronics Workshop (SNW)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Impact of Channel Flattening Process on Device Performance of Ge nMOSFETs with Different Surface Orientations2019

    • Author(s)
      W. H. Chang, T. Irisawa, H. Ishii, N. Uchida and T. Maeda
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] InGaAs photo field-effect-transistors (PhotoFETs) on Half-inch Si Wafer Using Layer Transfer Technology2019

    • Author(s)
      T. Maeda, H. Ishii, W. H. Chang, T. Shimizu, H. Ishii, O. Ohishi, A. Endo and H. Fujisiro
    • Organizer
      International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2019 Annual Research Report
    • Int'l Joint Research
  • [Presentation] モノリシック3次元CMOS集積に向けたGe-On-Insulator技術2019

    • Author(s)
      前田 辰郎, 張 文馨, 入沢 寿史, 石井 裕之, 倉島優一、髙木秀樹、内田 紀行
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 転写技術による表面照射型近赤外InGaAs PhotoFET の開発2019

    • Author(s)
      大石和明,石井寛仁,張文馨, 石井裕之, 清水鉄司,遠藤聡, 藤代博記,前田辰郎
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Ge清浄表面からのY2O3/Ge pMOSFETsの作製2019

    • Author(s)
      石井寛仁,張文馨, 石井裕之, 森田行則,遠藤聡, 藤代博記,前田辰郎
    • Organizer
      第80回応用物理学会秋季学術講演会
    • Related Report
      2019 Annual Research Report
  • [Presentation] 高移動度半導体薄膜接合転写とデバイス応用2019

    • Author(s)
      前田辰郎
    • Organizer
      日本学術振興会 接合界面創成技術第191委員会第23回講演会
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] デバイスの三次元化とその課題2019

    • Author(s)
      前田辰郎
    • Organizer
      日本学術振興会先端ナノデバイス・材料テクノロジー第151委員会第4回研究会
    • Related Report
      2019 Annual Research Report
    • Invited
  • [Presentation] 新しいⅣ族半導体のトランスファー&ビルトによる新機能集積技術2019

    • Author(s)
      前田辰郎
    • Organizer
      科学技術振興機構新技術説明会
    • Related Report
      2019 Annual Research Report
  • [Presentation] Spin on Glassからの固相拡散によるGe中のn型不純物拡散挙動2019

    • Author(s)
      高口遼太郎,竹中充, 高木信一
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Impact of metal gate electrodes on electrical properties of Y2O3/Si0.78Ge0.22 gate stacks2019

    • Author(s)
      T. Lee, M. Takenaka, and S. Takagi
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Improvement of material quality of (100) and (111) Ge-on-insulator substrates fabricated by smart-cut technology2019

    • Author(s)
      C.-M. Lim, M. Takenaka and S. Takagi
    • Organizer
      3rd Electron Devices Technology and Manufacturing (EDTM) Conference
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 性能限界を越えるCMOS デバイス技術2019

    • Author(s)
      高木信一
    • Organizer
      名古屋大学シリコンフロンティア・特別研究会, ~特定領域研究『ポストスケール』から10年を超えて~
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Ultra-Low Power III-V-Based Mosfets and Tunneling FETs2018

    • Author(s)
      S. Takagi, D.-h. Ahn, T. Gotow, C. Yokoyama, C.-Y. Chang, K. Endo, K. Katoh and M. Takenaka
    • Organizer
      233rd Electrochemical Society (ECS) Meeting, H02 - Advanced CMOS-Compatible Semiconductor Devices 18
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Hole mobility enhancement in extremely-thin-body strained GOI and SGOI pMOSFETs by improved Ge condensation method2018

    • Author(s)
      K.-W. Jo, W.-K. Kim, M. Takenaka, and S. Takagi
    • Organizer
      Symposia on VLSI Technology
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] MOS Device Technology using Alternative Channel Materials for Low Power Logic LSI2018

    • Author(s)
      S. Takagi, K. Kato, W.-K. Kim, K.-w. Jo, R. Matsumura, R. Takaguchi, D.-H. Ahn, T. Gotow and M. Takenaka
    • Organizer
      48th European Solid-State Device Research Conference (ESSDERC)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Fabrication of InAs-on-Insulator structures by Smart Cut method with room temperature hydrogen implantation2018

    • Author(s)
      K. Sumita, K. Kato, M. Takenaka and S. Takagi
    • Organizer
      2018 International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] InGaAs nチャネルMOSFETにおける界面準位発生と基板ホール電流の関係2018

    • Author(s)
      尹尚希, 張志宇, 安大煥, 竹中充, 高木信一
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Impact of SiGe Layer Thickness in Starting Substrates on Properties of Ultrathin Body Ge-on-insulator pMOSFETs fabricated by Ge Condensation2018

    • Author(s)
      Kwang-Won Jo, Wu-Kang Kim, Mitsuru Takenaka and Shinichi Takagi
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Improvement of SiGe MOS Interfaces Properties by TiN/Y2O3 Gate Stacks2018

    • Author(s)
      T. Lee, K. Kato, M. Ke, M. Takenaka, and S. Takagi
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Ultrathin-body Ge-On-Insulator MOSFET and TFET technologies2018

    • Author(s)
      S. Takagi, W.-K. Kim, K.-W. Jo, R. Matsumura, R. Takaguchi, T. Katoh, T.-E. Bae, K. Kato and M. Takenaka
    • Organizer
      AiMES 2018 (ECS and SMEQ Joint International Meeting), Symposium G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] MOSトランジスタにおけるキャリアのフォノン散乱2018

    • Author(s)
      高木信一
    • Organizer
      応用物理学会第212回シリコンテクノロジー分科会研究集会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] Characterization and understanding of slow traps in GeOx-based n-Ge MOS interfaces2018

    • Author(s)
      M. Ke, P. Cheng, K. Kato, M. Takenaka, and S. Takagi
    • Organizer
      IEEE International Electron Devices Meeting (IEDM)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Correlation of interface state generation and InGaAs MOS interface properties2018

    • Author(s)
      S.-H. Yoon, D.-H. Ahn, C. Yokoyama, M. Takenaka, and S. Takagi
    • Organizer
      49th IEEE Semiconductor Interface Specialists Conference (SISC)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Reduction in interface trap density of TiN/Y2O3/Si0.62Ge0.38 gate stacks with high temperature PMA2018

    • Author(s)
      T.-E. Lee, M. Ke, K. Kato, M. Takenaka, and S. Takagi
    • Organizer
      49th IEEE Semiconductor Interface Specialists Conference (SISC)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] HEtero-Layer-Lift-Off (HELLO) technology for enhanced hole mobility in UTB GeOI pMOSFETs2018

    • Author(s)
      W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, N. Uchida and T. Maeda
    • Organizer
      2018 International Symposium on VLSI Technology, Systems and Applications
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Ultra-thin germanium-tin on insulator structure through direct bonding technique2018

    • Author(s)
      T. Maeda, W. H. Chang, T. Irisawa, H. Ishii, H. Oka, M. Kurosawa, Y. Imai, O. Nakatsuka and N. Uchida
    • Organizer
      ISTDM/ICSI 2018
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Significant Performance Enhancement of UTB GeOI pMOSFETs by Advanced Channel Formation Technologies2018

    • Author(s)
      W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, N. Uchida and T. Maeda
    • Organizer
      Symposia on VLSI Technology
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Electron and Acoustic Phonon Confinement in Ultrathin-Body Ge on Insulator2018

    • Author(s)
      V. Poborchii, W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, N. Uchida, J. Groenen, P. Geshev and T. Maeda
    • Organizer
      2018 International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] High performance UTB GeOI n and pMOSFETs featuring HEtero-Layer-Lift-Off (HELLO) technology2018

    • Author(s)
      W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi, Y. Kurashima, N. Uchida, and T. Maeda
    • Organizer
      AiMES 2018 (ECS and SMEQ Joint International Meeting), Symposium G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] UTB-GeOI構造の超平坦化による正孔移動度向上2018

    • Author(s)
      張 文馨, 入沢 寿史, 石井 裕之, 内田 紀行, 前田 辰郎
    • Organizer
      第79回応用物理学会秋季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] チャネル形成技術の高度化による極薄GeOI pMOSFETsの性能向上2018

    • Author(s)
      張 文馨, 入沢 寿史, 石井 裕之, 内田 紀行, 前田 辰郎
    • Organizer
      第210回シリコンテクノロジー研究集会
    • Related Report
      2018 Annual Research Report
    • Invited
  • [Presentation] モノリシック3D CMOS に向けたUTB-GeOI 構造の開発2018

    • Author(s)
      前田 辰郎, 張 文馨, 入沢 寿史, 石井 裕之, 内田 紀行
    • Organizer
      第24回電子デバイス界面テクノロジー研究会
    • Related Report
      2018 Annual Research Report
  • [Presentation] UTB-GeOIチャネル構造における裏面Siパッシベーションの効果2018

    • Author(s)
      張 文馨, 入沢 寿史, 石井 裕之, 内田 紀行, 前田 辰郎
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] Ge基板の平坦化RTAを用いたin-situ Ge MOS構造の作製2018

    • Author(s)
      石井 寛仁,張 文馨, 石井 裕之, 森田行則,遠藤聡, 藤代博記,前田 辰郎
    • Organizer
      第66回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report
  • [Presentation] ECRプラズマ酸化によるALD high-k/GeOx/Ge界面の遅い準位起源2018

    • Author(s)
      柯夢南, 竹中充, 高木信一
    • Organizer
      電子デバイス界面テクノロジー研究会―材料・プロセス・デバイス特性の物理―(第23回研究会)
    • Related Report
      2017 Annual Research Report
  • [Presentation] Extremely-Thin Body GOI structures and MOSFETs2018

    • Author(s)
      S. Takagi, W.-K. Kim, K. Jo, X. Yu and M. Takenaka
    • Organizer
      11th International WorkShop on New Group IV Semiconductor Nanoelectronics
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Ge系デバイスのヘテロジニアスインテグレーション技術2018

    • Author(s)
      前田辰郎
    • Organizer
      電子情報通信学会 システムナノ技術に関する時限研究専門委員会第3回研究会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] Physical origins of slow traps for ALD high-k dielectrics on GeOx/Ge interfaces2018

    • Author(s)
      M. Ke, K. Kato, M. Takenaka and S. Takagi
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Al2O3/p-InxGa1-xAs MOS界面に与える前処理の効果2018

    • Author(s)
      横山千晶,張志宇,加藤公彦, 竹中充,高木信一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Smart Cut法を用いたInAs on Insulator構造の作製2018

    • Author(s)
      隅田圭, 竹中充, 高木信一
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Ge MOSFETへの期待と課題2018

    • Author(s)
      高木信一, 曺光元, 金佑彊, 柯夢南, 加藤公彦, 竹中充
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] High quality UTB GeOI by HEtero-Layer-Lift-Off (HELLO) technology for future Ge CMOS application2018

    • Author(s)
      W.-H. Chang, T. Irisawa, H. Ishii, H. Hattori, Hi. Ota, H. Takagi, Y. Kurashima, N. Uchida, T. Maeda
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 超薄膜ゲルマニウムのバンド構造2018

    • Author(s)
      前田辰郎, 張文馨, 入沢寿史, 石井裕之, 服部浩之, 内田紀行, 山内 淳
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] Ultra-Low Power III-V-Based Mosfets and Tunneling FETs2018

    • Author(s)
      S. Takagi, D.-H. Ahn, T. Gotow, C. Yokoyama, C.-Y. Chang, K. Endo, K. Katoh and M. Takenaka
    • Organizer
      233rd Electrochemical Society (ECS) Meeting, H02 - Advanced CMOS-Compatible Semiconductor Devices 18
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Ultrathin-body Ge-On-Insulator MOSFET and TFET technologies2018

    • Author(s)
      S. Takagi, W.-K. Kim, K.-W. Jo, R. Matsumura, R. Takaguchi, T. Katoh, T.-E. Bae, K. Kato and M. Takenaka
    • Organizer
      234th Electrochemical Society (ECS) Meeting, Symposium G03: SiGe, Ge, and Related Materials: Materials, Processing, and Devices
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] High Performance 4.5-nm-Thick Compressively-Strained Ge-on-Insulator pMOSFETs Fabricated by Ge Condensation with Optimized Temperature Control2017

    • Author(s)
      W.-K. Kim, M. Takenaka and S. Takagi
    • Organizer
      Sympia on VLSI technology
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] First Experimental Observation of Channel Thickness Scaling Induced Electron Mobility Enhancement in UTB-GeOI nMOSFETs2017

    • Author(s)
      W. H. Chang, T. Irisawa, H. Ishii, H. Hattori, H. Ota, H. Takagi, Y. Kurashima, N. Uchida and T. Maeda
    • Organizer
      Sympia on VLSI technology
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Low power III-V MOSFETs and TFETs on Si platform2017

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      9th International Conference on Materials for Advanced Technologies
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Interface state generation of Al2O3/InGaAs MOS structures by electrical stress2017

    • Author(s)
      S.-H. Yoon, C.-Y. Chang, D. H. Ahn, M. Takenaka and S. Takagi
    • Organizer
      20th Conference on Insulating Films on Semiconductors (INFOS 2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Reduction of slow trap density of Al2O3/GeOx/n-Ge MOS interfaces by inserting ultrathin Y2O3 interfacial layers2017

    • Author(s)
      M. Ke, M. Takenaka, and S. Takagi
    • Organizer
      20th Conference on Insulating Films on Semiconductors (INFOS 2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Understanding of slow traps generation in plasma oxidation GeOx/Ge MOS interfaces with ALD high-k layers2017

    • Author(s)
      M. Ke, M. Takenaka and S. Takagi
    • Organizer
      47th European Solid-State Device Research Conference (ESSDERC)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Advanced Devices and Materials for Future CMOS-based IC Technologies2017

    • Author(s)
      S. Takagi
    • Organizer
      International Electron Devices and Materials Symposium (IEDMS) 2017
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] ALD Al2O3/GeOx/Ge界面の電子と正孔に対する遅い準位の物理的起源に関する考察2017

    • Author(s)
      柯夢南, 竹中充, 高木信一
    • Organizer
      第78回応用物理学会 秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 冷却レートを低減した酸化濃縮プロセスにより作製した高圧縮ひずみGOI pMOSFET2017

    • Author(s)
      金佑彊, 竹中充, 高木信一
    • Organizer
      第78回応用物理学会 秋季学術講演会
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] プラズマ酸化による酸化濃縮GOI層の薄膜化により作製した極薄ひずみGOI pMOSFETs2017

    • Author(s)
      金佑彊, 竹中充, 高木信一
    • Organizer
      第78回応用物理学会 秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] 電気ストレスによるAl2O3/InGaAs MOS界面における界面準位発生2017

    • Author(s)
      尹尚希, 張志宇, 安大煥, 竹中充, 高木信一
    • Organizer
      第78回応用物理学会 秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Effect of SiGe Layer Thickness in Starting Substrate on Electrical Properties of Ultrathin Body Ge-on-insulator pMOSFET fabricated by Ge Condensation2017

    • Author(s)
      K.-W. Jo, W.-K. Kim, M. Takenaka and S. Takagi
    • Organizer
      第78回応用物理学会 秋季学術講演会
    • Related Report
      2017 Annual Research Report
  • [Presentation] Effect of SiGe Layer Thickness in Starting Substrate on Electrical Properties of Ultrathin Body Ge-on-insulator pMOSFET fabricated by Ge Condensation2017

    • Author(s)
      K.-W. Jo, W.-K. Kim, M. Takenaka and S. Takagi
    • Organizer
      2017 International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Advanced MOS device technology2017

    • Author(s)
      S. Takagi
    • Organizer
      2017 International Conference on Solid State Devices and Materials (SSDM)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Advanced MOS device technology for ultra-low power IoT applications2017

    • Author(s)
      S. Takagi
    • Organizer
      12th VDEC D2T Symposium
    • Related Report
      2017 Annual Research Report
    • Invited
  • [Presentation] MOS Interface Defect Control in Ge/IIIV Gate Stacks2017

    • Author(s)
      S. Takagi, M. Ke, C. Y. Chang, C. Yokoyama, M. Yokoyama, T. Gotow, K. Nishi, and M. Takenaka
    • Organizer
      232nd Electrochemical Society (ECS) Meeting, D01: Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Ultra-low power MOSFET and Tunneling FET technologies using III-V and Ge2017

    • Author(s)
      S. Takagi and M. Takenaka
    • Organizer
      2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Pre-cleaning Effects for Al2O3/p-InxGa1-xAs MOS Interfaces2017

    • Author(s)
      C. Yokoyama, C.-Y. Chang, M. Takenaka, and S. Takagi
    • Organizer
      48th IEEE Semiconductor Interface Specialists Conference (SISC)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Discrimination of pre-existing and generated slow traps under electrical stress in Al2O3/GeOx/n-Ge gate stacks with plasma oxidation process2017

    • Author(s)
      M. Ke, M. Takenaka, and S. Takagi
    • Organizer
      48th IEEE Semiconductor Interface Specialists Conference (SISC)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Relationship between interface state generation and substrate hole current in InGaAs n-channel MOSFETs2017

    • Author(s)
      S.-H. Yoon, D.-H. Ahn, M. Takenaka, and S. Takagi
    • Organizer
      48th IEEE Semiconductor Interface Specialists Conference (SISC)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research

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Published: 2017-06-01   Modified: 2023-10-16  

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