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Development of low-temperature process technology to realize highly reliable flexible integrated devices

Research Project

Project/Area Number 17H07317
Research Category

Grant-in-Aid for Research Activity Start-up

Allocation TypeSingle-year Grants
Research Field Electron device/Electronic equipment
Research InstitutionHiroshima National College of Maritime Technology

Principal Investigator

Sakaike Kohei  広島商船高等専門学校, 電子制御工学科, 准教授 (00740383)

Project Period (FY) 2017-08-25 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2018: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Keywords薄膜材料 / フレキシブル / レーザアニール / 電子デバイス / シリコン
Outline of Final Research Achievements

Flexible electronic devices such as bendable and even rollable displays and solar cells are potentially constructible on flexible substrates, and all over the world research and development efforts are being devoted to high-performance flexible electronics. The purpose of this work is to establish a new low temperature process technology for forming high quality metallic thin film and interlayer dielectric film on flexible substrates. By using the proposed method, it has been confirmed that a metal thin film with low resistivity can be formed in a short time as compared with the conventional method. From these results, it is suggested that high-quality metal thin films can be formed in a shorter time than conventional methods by optimizing the parameters.

Academic Significance and Societal Importance of the Research Achievements

本研究で実施した新規の低温プロセス技術の構築は、これまでに世界で実施された例はなく、先行研究が存在しない。従って、既存技術では実現できなかった様々なフレキシブルアプリケーションも容易に実現できる可能性を秘めており、フレキシブルエレクトロニクスの飛躍的な進歩が期待できる。

Report

(3 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Annual Research Report

URL: 

Published: 2017-08-25   Modified: 2020-03-30  

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