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Bottom up growth of Si based nanowires on insulating substrates

Research Project

Project/Area Number 17H07351
Research Category

Grant-in-Aid for Research Activity Start-up

Allocation TypeSingle-year Grants
Research Field Electronic materials/Electric materials
Research InstitutionNational Institute for Materials Science

Principal Investigator

Matsumura Ryo  国立研究開発法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, 研究員 (90806358)

Project Period (FY) 2017-08-25 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2018: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Keywords半導体ナノワイヤ / 結晶成長 / 薄膜 / ナノワイヤ / 太陽電池 / 金属触媒成長 / VLS法 / 疑似単結晶テンプレート / 金属誘起層交換成長 / 疑似単結晶薄膜 / シリコン / ゲルマニウム / スズ / Siナノワイヤ
Outline of Final Research Achievements

In order to expand application of high performance nanowire solar cells, vertical nanowire growth on cheap glass substrates is essential. To realize this, realize of template layer for nanowire growth on glass substrate is needed. Moreover, since softening temperature of glass substrate is lower than single crystal Si wafers, low temperature process to grow nanowire is also essential.
In this work, we have realized semiconductor template thin film layer suitable for this purpose by developing metal induced crystallization technique. Moreover, by applying eutectic effects, we have successfully realize low temperature growth of nanowire below softening temperature of glass substrates. These results will facilitate realize of nanowire solar cells on cheap glass substrates.

Academic Significance and Societal Importance of the Research Achievements

従来より縦型半導体ナノワイヤを用いることで太陽電池の発電効率が高効率化することは期待されていたが、その実現のためには高価な単結晶基板が必要であった。本成果は高価な単結晶基板から脱却した安価なナノワイヤ太陽電池を実現するうえで非常に有効な成果であるといえる。
また、本研究を進めている間に副産物として、新材料として注目されているゲルマニウム・スズ混晶のナノワイヤをSi基板上に成長することに成功した。この材料は次世代の高速演算素子や光通信デバイスの基盤材料として注目されており、太陽電池分野に限らない広い分野への波及効果がある研究成果である。

Report

(3 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Annual Research Report
  • Research Products

    (3 results)

All 2018

All Presentation (3 results) (of which Int'l Joint Research: 2 results)

  • [Presentation] Single domain poly-Si film on insulating substrate by limited region aluminum induced layer exchange growth2018

    • Author(s)
      松村亮 王云帆 JEVASUWANWipakorn 深田直樹
    • Organizer
      EMRS2018Fall Meeting
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] The Structural Controlled SiNWs by Wet and Dry Etching Processes for Photovoltaic Applications2018

    • Author(s)
      JEVASUWANWipakorn CHENJunyi SUBRAMANIThiyagu PRADELKen Kei Shinotsuka Yoshihisa Hatta 武井俊朗 松村亮 深田直樹
    • Organizer
      EMRS2018Fall Meeting
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Growth of Au/Sn-catalyzed Ge 1-x Sn x nanowires with high Sn content (~5 at.%)2018

    • Author(s)
      孫永烈 松村亮 JEVASUWANWipakorn 深田直樹
    • Organizer
      第65回応用物理学会春季学術講演会
    • Related Report
      2018 Annual Research Report

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Published: 2017-08-25   Modified: 2020-03-30  

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