大容量磁気メモリ用単結晶磁気抵抗素子のシリコンウェハー上で開発
| Project/Area Number |
17J01091
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Single-year Grants |
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| Section | 国内 |
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| Research Field |
Physical properties of metals/Metal-base materials
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| Research Institution | University of Tsukuba |
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| Research Fellow |
陳 嘉民 筑波大学, 数理物質科学研究科, 特別研究員(DC2)
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| Project Period (FY) |
2017-04-26 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2017: ¥900,000 (Direct Cost: ¥900,000)
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| Keywords | CPP-GMR / Heusler alloy / Spintronic / Epitaxial growth / Magnetic memory |
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| Outline of Annual Research Achievements |
During the past fiscal year, we had published 1 papers in Applied Physics Letters and applied for a domestic patent in Japan. We has developed a new series of Heusler alloys, Co2(Fe1-xTix)Si (CFTS) (0<x<1), which has a merit of high spin-polarization together with high driving force for L21-order even at low annealing temperature. In addition, we has also overcome the difficulty of growing high quality epitaxial ferromagnetic films on Si substrate by using NiAl buffer material and successfully fabricated high performance Si-based CPP-GMR device, which is a great breakthrough for read head sensor application. More importantly, this result can be extended to develop Si-based epitaxial MTJs for next generation gigabyte-class MRAM application.
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| Research Progress Status |
翌年度、交付申請を辞退するため、記入しない。
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| Strategy for Future Research Activity |
翌年度、交付申請を辞退するため、記入しない。
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Report
(1 results)
Research Products
(7 results)
