| Project/Area Number |
17J10451
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Single-year Grants |
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| Section | 国内 |
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| Research Field |
Inorganic materials/Physical properties
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| Research Institution | The University of Tokyo |
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Principal Investigator |
費 嘉陽 東京大学, 工学系研究科, 特別研究員(DC2)
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| Project Period (FY) |
2017-04-26 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2017: ¥900,000 (Direct Cost: ¥900,000)
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| Keywords | dielectric interfaces / dipole layer / flatband voltage shift |
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| Outline of Annual Research Achievements |
The purpose of this study is to understand the origin of dipole layer formation at gate dielectric interfaces which shifts the threshold voltage of advanced MOSFETs. Therefore two dielectric interfaces, Al2O3/AlFxOy and MgO/Al2O3, were studied.
Dipole layer formation at AlFxOy/Al2O3 and MgO/Al2O3 interfaces was studied by both experiments and classic Molecular Dynamics simulation. Positive dipole layer formation was observed for AlFxOy/Al2O3 while negative for MgO/Al2O3. The simulation has suggested oxygen migration playing an important role on charge separation at AlFxOy/Al2O3 and Mg cations migration playing an important role at MgO/Al2O3. Different roles of ionic motion at these two interfaces are considered to be the result of the properties of the interfaces. The ionic motions are mainly determined by stress relaxation at AlFxOy/Al2O3 while formation of chemically stable compound determines the ionic motions at MgO/Al2O3. The results indicate a combined effects of cation and anion motion during the dielectric interface formation to caused charge separation at dielectric interfaces.
The study on dipole layer formation at various dielectric interfaces provides us with an insight in understanding the relationship between the dipole layer formation at dielectric interfaces and interface ionic motions
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| Research Progress Status |
翌年度、交付申請を辞退するため、記入しない。
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| Strategy for Future Research Activity |
翌年度、交付申請を辞退するため、記入しない。
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