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Understanding the Origin of Dipole Layer Formation at Interfaces between Two Dielectric Materials

Research Project

Project/Area Number 17J10451
Research Category

Grant-in-Aid for JSPS Fellows

Allocation TypeSingle-year Grants
Section国内
Research Field Inorganic materials/Physical properties
Research InstitutionThe University of Tokyo

Principal Investigator

費 嘉陽  東京大学, 工学系研究科, 特別研究員(DC2)

Project Period (FY) 2017-04-26 – 2019-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥1,700,000 (Direct Cost: ¥1,700,000)
Fiscal Year 2017: ¥900,000 (Direct Cost: ¥900,000)
Keywordsdielectric interfaces / dipole layer / flatband voltage shift
Outline of Annual Research Achievements

The purpose of this study is to understand the origin of dipole layer formation at gate dielectric interfaces which shifts the threshold voltage of advanced MOSFETs. Therefore two dielectric interfaces, Al2O3/AlFxOy and MgO/Al2O3, were studied.
Dipole layer formation at AlFxOy/Al2O3 and MgO/Al2O3 interfaces was studied by both experiments and classic Molecular Dynamics simulation. Positive dipole layer formation was observed for AlFxOy/Al2O3 while negative for MgO/Al2O3. The simulation has suggested oxygen migration playing an important role on charge separation at AlFxOy/Al2O3 and Mg cations migration playing an important role at MgO/Al2O3. Different roles of ionic motion at these two interfaces are considered to be the result of the properties of the interfaces. The ionic motions are mainly determined by stress relaxation at AlFxOy/Al2O3 while formation of chemically stable compound determines the ionic motions at MgO/Al2O3. The results indicate a combined effects of cation and anion motion during the dielectric interface formation to caused charge separation at dielectric interfaces.
The study on dipole layer formation at various dielectric interfaces provides us with an insight in understanding the relationship between the dipole layer formation at dielectric interfaces and interface ionic motions

Research Progress Status

翌年度、交付申請を辞退するため、記入しない。

Strategy for Future Research Activity

翌年度、交付申請を辞退するため、記入しない。

Report

(1 results)
  • 2017 Annual Research Report
  • Research Products

    (3 results)

All 2017

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Presentation (2 results) (of which Int'l Joint Research: 2 results)

  • [Journal Article] Opportunity of dipole layer formation at non-SiO 2 dielectric interfaces in two cases: Multi-cation systems and multi-anion systems2017

    • Author(s)
      Fei Jiayang、Kita Koji
    • Journal Title

      Microelectronic Engineering

      Volume: 178 Pages: 225-229

    • DOI

      10.1016/j.mee.2017.05.035

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Presentation] Opportunity of dipole layer formation at non-SiO2 dielectric interfaces in two cases: multi-cation systems and multi-anion systems2017

    • Author(s)
      Jiayang Fei and Koji Kita
    • Organizer
      Conf. on Insulating Films on Semiconductors (INFOS 2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Consideration on the interfacial dipole layer formation at non-SiO2 oxide interfaces in the examples of MgO/Al2O3 and HfO2/Al2O32017

    • Author(s)
      Jiayang Fei and Koji Kita
    • Organizer
      2017 Int. Conf. on Solid State Devices and Materials (SSDM 2017)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research

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Published: 2017-05-25   Modified: 2024-03-26  

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