Semimetal (metal) mediated group-IV-semiconductor nanostructure formation and its application for next-generation fundamental device technologies
| Project/Area Number |
17K06338
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Hirosaki University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
遠田 義晴 弘前大学, 理工学研究科, 准教授 (20232986)
伊高 健治 弘前大学, 地域戦略研究所, 教授 (40422399)
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| Project Period (FY) |
2017-04-01 – 2020-03-31
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| Project Status |
Completed (Fiscal Year 2019)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2019: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2018: ¥780,000 (Direct Cost: ¥600,000、Indirect Cost: ¥180,000)
Fiscal Year 2017: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
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| Keywords | 半導体ナノ構造 / ナノドット / 量子ドット / Ge / Bi / GeSn / IV族半導体 |
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| Outline of Final Research Achievements |
Group IV semiconductor nanodots are expected for various next-generation devices. On the other hand, a direct bandgap nature is expected on the condition that the Sn composition of GeSn exceeds around 10%. We have found that high-density Ge-nanodots can be formed by Bi-mediation, but their mechanism has not been revealed yet.
On this research theme, we have shown that Bi is diffused in the Ge layer by solid-phase diffusion during the deposition, and nanodot formation is enhanced during the annealing process with solid-liquid coexistence phase in the alloy system. Next, we have studied the Sn-mediated GeSn-nanodot formation and successfully developed high-density nanodots with Sn composition above 10% by low-temperature (below 230℃) processing.
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| Academic Significance and Societal Importance of the Research Achievements |
各種の次世代デバイスへの応用が期待されているⅣ族半導体ナノドットにおいて、本研究成果は以下のような意義をもつ。１）低温プロセスにより高密度なナノドットが形成可能となり、低コストかつSi-VLSIプロセスと整合性の高い製造技術が開発できた。２）ナノ領域における物質のマイグレーションや固相成長に関する新たな学術的な知見が得られた。３）直接遷移半導体となることが予想されるSn組成10%以上を有するGeSnナノドットの形成に成功し、Siフォトニクス用レーザ素子の実現に向けた一歩となった。
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Report
(4 results)
Research Products
(17 results)
