| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2019: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2018: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
|
|---|
| Outline of Final Research Achievements |
High-speed nonvolatile memory using intersubband transitions in GaN-based resonant tunneling diodes (GaN-based RTDs) was studied to realize a high-speed nonvolatile memory operating at picosecond time scales. The possibility of realization of this nonvolatile memory was shown by the achievement of stable nonvolatile memory operations due to the improvement of the crystal quality of GaN-based RTDs, the verification of operation mechanism using the high-speed pulses, and the predictions of high-speed operations at picosecond time scales by reduction in the time constant and low-voltage operations less than 1 V by appropriate designs of the quantum well structure.
|
