| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2019: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2018: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2017: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
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| Outline of Final Research Achievements |
In the present research, a new solution growth technique to make AlN/sapphire template was studied. Specifically, the following growth process was examined: (1) Al sputtering on sapphire substrate, (2) filling of Li3N particles on the Al/sapphire template, and (3) annealing of the material to make AlN/sapphire template. The results suggest that (A) the source material should be Al and Li3N complex instead of a simple Li3N, and (B) annealing temperature should be around 1250 degree C are necessary to make AlN/sapphire template by this technique.
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