Synthesis of multilayer hexagonal boron nitride as the platform of two-dimensional devices
| Project/Area Number |
17K19036
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| Research Category |
Grant-in-Aid for Challenging Research (Exploratory)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Nano/Micro science and related fields
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| Research Institution | Kyushu University |
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Principal Investigator |
Ago Hiroki 九州大学, グローバルイノベーションセンター, 教授 (10356355)
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| Co-Investigator(Kenkyū-buntansha) |
光原 昌寿 九州大学, 総合理工学研究院, 准教授 (10514218)
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| Project Period (FY) |
2017-06-30 – 2019-03-31
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| Project Status |
Completed (Fiscal Year 2018)
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| Budget Amount *help |
¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2018: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
Fiscal Year 2017: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
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| Keywords | 六方晶窒化ホウ素 / CVD法 / 遷移金属ダイカルコゲナイド / 触媒・化学プロセス / 結晶成長 / ナノ材料 / マイクロ・ナノデバイス |
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| Outline of Final Research Achievements |
Two-dimensional atomic sheets have formed an active research field because of their unique electronic and optical properties which promise the application to next generation devices. Hexagonal boron nitride (hBN) is an atomically thin insulator with large band gap. Hexagonal BN has been attracting increased interest, because hBN can boost physical and optical properties of other two-dimensional materials. However, most of the hBN used in research is prepared by mechanical exfoliation from bulk hBN crystal. In this work, we have developed a new method to synthesize uniform hBN by chemical vapor deposition method which allows large-scale synthesis. Furthermore, we confirmed that our hBN improves the optical properties of the atomic sheets of transition metal dichalcogenide.
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| Academic Significance and Societal Importance of the Research Achievements |
多層hBNは、グラフェンなどの原子層物質のキャリア移動度や光学特性を劇的に向上させることができることから、現在では原子層物質で優れた特性や新規物性を得るために不可欠な材料になりつつある。hBNをシリコン基板と原子層物質の間に挿入すると、シリコン表面の粗さやダングリングボンドなどの影響を大きく遮へいすることができるからである。従来は剥離法でしか得られなかった多層hBNを、本研究はCVD法で大面積に合成することに道筋をつけたものであり、今後の原子層物質の科学の進展を大きく促進するものである。本研究成果は様々な原子層物質の応用の可能性を大きく拡げるものであり、社会的意義も極めて大きいといえる。
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Report
(3 results)
Research Products
(52 results)
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[Journal Article] Formation of Environmentally Stable Hole-Doped Graphene Films with Instantaneous and High-Density Carrier Doping via a Boron-Based Oxidant2019
Author(s)
K. Kanahashi, N. Tanaka, Y. Shoji, M. Maruyama, I. Jeon, K. Kawahara, M. Ishihara, M. Hasegawa, H. Ohta, H. Ago, Y. Matsuo, S. Okada, T. Fukushima, T. Takenobu
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Journal Title
NPJ 2D Mater. Appl.
Volume: 3
Issue: 1
Pages: 7-7
DOI
NAID
Related Report
Peer Reviewed / Open Access / Int'l Joint Research
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[Journal Article] Surface-Mediated Aligned Growth of Monolayer MoS2 and In-Plane Heterostructures with Graphene on Sapphire2018
Author(s)
Kenshiro Suenaga, Hyun Goo Ji, Yung-Chang Lin, Tom Vincent, Mina Maruyama, Adha Sukma Aji, Yoshihiro Shiratsuchi, Dong Ding, Kenji Kawahara, Susumu Okada, Vishal Panchal, Olga Kazakova, Hiroki Hibino, Kazu Suenaga, and Hiroki Ago
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Journal Title
ACS Nano
Volume: 12
Issue: 10
Pages: 10032-10044
DOI
Related Report
Peer Reviewed / Int'l Joint Research
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[Presentation] Epitaxial growth of large grain, monolayer h-BN and application to gas barrier layer2018
Author(s)
A. B. Taslim, H. Nakajima, Y.-C. Lin, Y. Uchida, K. Kawahara, T. Morimoto, T. Okazaki, K. Suenaga, H. Hibino, H. Ago
Organizer
9th A3 Symposium on Emerging Materials: Nanomaterials for Electronics, Energy and Environment
Related Report
Int'l Joint Research
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